Preliminary Data Sheet NP179N04TUK R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 40 V – 180 A – N-channel Power MOS FET Application: Automotive Description The NP179N04TUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 90 A) • Low Ciss Ciss = 8900 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating *1 NP179N04TUK-E1-AY NP179N04TUK-E2-AY *1 Note: Pure Sn (Tin) Packing Tape 800 p/reel Taping (E1 type) Taping (E2 type) Package TO-263-7pin *1 Pb-free (This product does not contain Pb in the external electrode) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Repetitive Avalanche Current *3 Repetitive Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±180 ±720 288 1.8 175 –55 to +175 66 435 Unit V V A A W W °C °C A mJ Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% *2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm) *3 RG = 25 Ω, VGS = 20 V → 0 V Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W Page 1 of 6 NP179N04TUK Preliminary Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage *1 Reverse Recovery Time Reverse Recovery Charge Note: Symbol IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. — — 2.0 65 — — — — — — — — — — — — — — TYP. — — 3.0 130 1.05 8900 1200 440 33 12 110 16 160 42 42 0.9 63 100 MAX. 1 ±100 4.0 — 1.25 13350 1800 800 80 30 220 40 240 — — 1.5 — — Unit μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 90 A VGS = 10 V, ID = 90 A VDS = 25 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 90 A VGS = 10 V RG = 0 Ω VDD = 32 V VGS = 10 V ID = 180 A IF = 180 A, VGS = 0 V IF = 180 A, VGS = 0 V di/dt = 100 A/μs *1 Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω RL Wave Form RG PG. VDD VGS VGS VDD 0 VGS 10% 90% VDS 90% BVDSS ID IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS VDD Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 Page 2 of 6 NP179N04TUK Preliminary Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 350 PT - Total Power Disslpation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 300 250 200 150 100 50 0 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(Pulse) = 720 A 1000 R DS(ON) Limited PW 100 =1 00 ID(DC) = 180 A μs PW =1 ms Power Dissipation Limited 10 PW 0m =1 Secondary Breakdown Limited s 1 DC ID - Drain Current - A (VGS=10 V) TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 1 Rth(ch-C) = 0.52°C/W 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 Page 3 of 6 NP179N04TUK Preliminary DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 800 ID - Drain Curent - A 600 500 400 300 200 0.2 0.4 0.6 1 0.1 0.001 0.8 VDS = 10 V Pulsed 0 1 2 3 4 5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4 |yfs| - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 0 10 0.01 VGS = 10 V Pulsed 100 0 TA = –55°C –25°C 25°C 75°C 100°C 125°C 150°C 175°C 100 3 2 1 VDS = VGS ID = 250 μA 0 –100 –50 0 50 100 150 200 1000 TA = –55°C –25°C 25°C 75°C 100°C 125°C 150°C 175°C 100 10 VDS = 5 V Pulsed 1 0.1 1 10 100 1000 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 2 1 VGS = 10 V Pulsed 0 1 10 100 ID - Drain Current - A R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 700 3 ID = 36A 90A 180A 2 1 Pulsed 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 Preliminary DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 2 1 VGS = 10 V ID = 90 A Pulsed 0 –100 –50 0 50 100 150 Ciss 1000 Coss Crss VGS = 0 V f = 1 MHz 100 0.01 200 0.1 1 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 35 1000 td(off) 100 td(on) 10 tf VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 1 tr 10 100 VDD = 32 V 20 V 8V 30 25 12 10 8 20 15 6 VGS 4 10 VDS 5 0 1000 14 0 20 40 60 ID = 180 A 2 0 80 100 120 140 160 180 ID - Drain Current - A QG- Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 trr - Reverse Recovery Time - ns 100 VGS = 10 V 10 VGS = 0 V 1 Pulsed 0.1 100 Tch - Channel Temperature - °C 1000 IF - Diode Forward Current - A 10000 VGS - Gate to Source Voltage - V Ciss, Coss, Crss - Capacitance -pF 100000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ NP179N04TUK 0 0.2 0.4 0.6 0.8 1.0 VF(S-D) - Source to Drain Voltage - V R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 1.2 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 1000 IF - Drain Current - A Page 5 of 6 NP179N04TUK Preliminary Package Drawing (Unit: mm) TO-263-7pin (MP-25ZT) (Mass: 0.128 g TYP.) 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 1.27 TYP. 0.025 to 0.25 0.5 ± 0 .2 0 to 8° 1 2 34 56 7 2.54 ± 0.25 0.6 ± 0.15 14.85 ± 0.5 8 9.15 ± 0.2 7.6 TYP. 8.4 TYP. 1.2 ± 0.3 Renesas Code: PRSS0008DB-A 2.5 0.25 1. Gate 2, 3, 5, 6, 7. Source 4, 8. Fin (Drain) 10.0 ± 0.2 Equivalent Circuit Drain Body Diode Gate Source Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1248EJ0100 Rev.1.00 Feb 12, 2015 Page 6 of 6 Revision History NP179N04TUK Data Sheet Description Rev. 1.00 Date Feb 12, 2015 Page — Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333 Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2015 Renesas Electronics Corporation. All rights reserved. Colophon 5.0