ROHM RB706W-40

Data Sheet
Schottky Barrier Diode
RB706W-40
Applications
Rectifying small power
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
1.6±0.2
0.3±0.1
0.05
1.3
Features
1)Ultra small mold type. (EMD3)
2)High reliability
0.15±0.05
0.7
(1)
(2)
0.6
EMD3
0.55±0.1
0.5
0.5
1.0±0.1
Construction
Silicon epitaxial planer
0.6
0~0.1
0.1Min
0.2±0.1
-0.05
1.6±0.2
0.8±0.1
0.7
(3)
0.7±0.1
Structure
ROHM :
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.55±0.1
0
2.0±0.05
0.3±0.1
8.0±0.2
0~0.1
1.8±0.2
1.8±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Limits
45
40
30
200
125
- 40 to +125
Min.
Unit
0.37
V
IF=1mA
1.0
μA
-
pF
VR=10V
VR=1V , f=1MHz
IR
-
Capacitance between terminals
Ct
-
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Conditions
Max.
-
Reverse current
Typ.
Unit
V
V
mA
mA
°C
°C
2.0
1/4
2011.09 - Rev.A
Data Sheet
RB706W-40
100
Ta=125°C
100000
Ta=75°C
10000
0REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
10
Ta=125°C
1
Ta=25°C
0.1
Ta=−25°C
0.01
1000
Ta=25°C
100
0
100
200
300
400
500
600
700
0
800
5
10
15
20
25
30
35
40
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
330
f=1MHz
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=−25°C
10
1
0.001
1
Ta=25°C
IF=1mA
n=30pcs
320
310
300
AVE:304.2mV
290
0.1
280
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1000
Ta=25°C
VR=30V
n=30pcs
800
700
600
500
400
300
AVE:111.0nA
200
100
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
900
REVERSE CURRENT:IR(nA)
Ta=75°C
Ta=25°C
f=1MHz
VR=0V
n=10pcs
9
8
7
6
5
4
3
2
1
AVE:1.81pF
0
0
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.09 - Rev.A
Data Sheet
RB706W-40
30
20
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
15
8.3ms
10
AVE:3.40A
5
0
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
AVE:11.7ns
5
0
trr DISPERSION MAP
IFSM DISPERSION MAP
10
10
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8
8.3ms
1cyc
6
4
2
0
IFSM
8
t
6
4
2
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.05
10000
0.04
1000
Rth(j-a)
100
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
Rth(j-c)
D=1/2
0.03
Sin(θ=180)
0.02
DC
10
0.01
1
0.001
0
0.01
0.1
1
10
100
1000
0
TIME:t(ms)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
0.02
0.03
0.04
0.05
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.09 - Rev.A
RB706W-40
Data Sheet
REVERSE POWER
DISSIPATION:PR (W)
0.003
0.002
D=1/2
DC
Sin(θ=180)
0.001
0
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.09 - Rev.A
Notice
Notes
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R1120A