Fairchild FFB3904 Npn multi-chip general purpose amplifier Datasheet

E2
MMPQ3904
C2
B2
E1
C1
C1
E1
C2
SC70-6
Mark: .1A
B2
E3
E4
B4
B2
B1
pin #1
B1
E2
B3
E2
E1
pin #1 B1
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT-6
Mark: .1A
pin #1 C1
SOIC-16
C2
C1
C3
C2
C4
C4
C3
Mark: MMPQ3904
FFB3904 / FMB3904 / MMPQ3904
FMB3904
FFB3904
Dot denotes pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
 1998 Fairchild Semiconductor Corporation
Max
FFB3904
300
2.4
415
FMB3904
700
5.6
180
Units
MMPQ3904
1,000
8.0
125
240
mW
mW/°C
°C/W
°C/W
°C/W
4
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
40
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
IBL
Base Cutoff Current
VCE = 30 V, VEB = 0
50
nA
ICEX
Collector Cutoff Current
VCE = 30 V, VEB = 0
50
nA
V
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 0.1 mA, VCE = 1.0 V
MMPQ3904
IC = 1.0 mA, VCE = 1.0 V
MMPQ3904
IC = 10 mA, VCE = 1.0 V
MMPQ3904
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
30
70
50
100
75
60
30
300
0.2
0.3
0.85
0.95
0.65
V
V
V
V
(MMPQ3904 only)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VEB = 0.5 V, IC = 0,
f = 140 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
250
MHz
4.0
pF
8.0
pF
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
V CE = 5V
400
125 °C
300
25 °C
200
- 40 °C
100
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
β = 10
- 40 °C
25 °C
0.6
125 °C
0.4
0.1
IC
1
10
- COLLECTOR CURRENT (mA)
100
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
500
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBESAT- BASE-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
125 °C
0.1
25 °C
0.05
- 40 °C
0.1
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
4
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
10
f = 1.0 MHz
VCB = 30V
CAPACITANCE (pF)
ICBO- COLLECTOR CURRENT (nA)
100
Capacitance vs
Reverse Bias Voltage
500
10
1
0.1
25
1
10
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
100
β = 10
50
75
100
125
TA - AMBIENT TEMPERATURE ( °C)
150
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
5
4
3
C ibo
2
C obo
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
(continued)
Typical Characteristics
(continued)
Noise Figure vs Source Resistance
Noise Figure vs Frequency
12
I C = 1.0 mA
R S = 200Ω
10
V CE = 5.0V
I C = 1.0 mA
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
12
I C = 50 µA
R S = 1.0 kΩ
8
I C = 0.5 mA
R S = 200Ω
6
4
2
I C = 100 µA, R S = 500 Ω
0
0.1
1
10
f - FREQUENCY (kHz)
10
I C = 5.0 mA
I C = 50 µA
8
6
I C = 100 µA
4
2
0
0.1
100
1
10
R S - SOURCE RESISTANCE ( kΩ )
Power Dissipation vs
Ambient Temperature
θ
V CE = 40V
I C = 10 mA
1
10
100
f - FREQUENCY (MHz)
PD - POWE R DIS SIPATION (W)
fe
h
0
20
40
60
80
100
120
140
160
180
h fe
θ - DEGREES
- CURRENT GAIN (dB)
Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0
1
SOIC-16
0.5
SC70 -6
0.25
0
Turn-On Time vs Collector Current
Ic
VCC = 40V
TIME (nS)
15V
2.0V
10
10
I C - COLLECTOR CURRENT (mA)
125
150
100
I B1 = I B2 =
Ic
10
T J = 25°C
T J = 125°C
10
t d @ VCB = 0V
1
50
75
100
TE MPE RATURE (°C)
10
t r @ V CC = 3.0V
5
25
Rise Time vs Collector Current
40V
100
0
500
t r - RISE TIME (ns)
I B1 = I B2 =
SOT-6
0.75
1000
500
100
100
5
1
10
I C - COLLECTOR CURRENT (mA)
100
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
I B1 = I B2 =
T J = 25°C
Fall Time vs Collector Current
500
Ic
I B1 = I B2 =
10
t f - FALL TIME (ns)
t S - STORAGE TIME (ns)
500
100
T J = 125°C
10
5
T J = 125°C
100
T J = 25°C
1
10
I C - COLLECTOR CURRENT (mA)
5
100
1
10
I C - COLLECTOR CURRENT (mA)
Current Gain
h oe - OUTPUT ADMITTANCE (µ mhos)
V CE = 10 V
f = 1.0 kHz
T A = 25oC
100
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
_
Input Impedance
100
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
0.1
100
Output Admittance
h re - VOLTAGE FE EDBACK RATIO (x10 4 )
h fe - CURRENT GAIN
VCC = 40V
10
500
h ie - INPUT IMPEDANCE (kΩ )
Ic
10
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
1
I C - COLLECTOR CURRENT (mA)
10
100
V CE = 10 V
f = 1.0 kHz
T A = 25oC
10
4
1
0.1
1
I C - COLLECTOR CURRENT (mA)
10
Voltage Feedback Ratio
10
7
V CE = 10 V
f = 1.0 kHz
T A = 25oC
5
4
3
2
1
0.1
1
I C - COLLE CTOR CURRENT (mA)
10
(continued)
Test Circuits
3.0 V
275 Ω
300 ns
10.6 V
Duty Cycle = 2%
Ω
10 KΩ
0
C1 < 4.0 pF
- 0.5 V
< 1.0 ns
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10 < t1 < 500 µs
t1
10.9 V
275 Ω
Duty Cycle = 2%
Ω
10 KΩ
0
C1 < 4.0 pF
1N916
- 9.1 V
< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G