1N2970B – 1N3015B and 1N3993A – 1N3998A Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV 10 Watt Zener Diodes Qualified per MIL-PRF-19500/124 DESCRIPTION The JEDEC registered 1N2970B through 1N3015B and 1N3993A through 1N3998A series are 10W Zener diodes with voltage regulation values between 3.9 and 200V. They are available in JAN, JANTX, and JANTXV military qualification grades on most voltage values. DO-213AA (DO-4) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • • Internal solder bond construction. Hermetically sealed (welded). Zener regulation voltages from 3.9 V to 200 V. Standard and reverse polarities are available. Consult factory for surface mount equivalents. JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/124. RoHS compliant devices available by adding “e3” suffix (commercial grade only). APPLICATIONS / BENEFITS • • • • Regulates voltage over a broad range of current and temperature. Standard voltage tolerances are +/- 5%. Nonsensitive to ESD per MIL-STD-750 method 1020. Inherently radiation hard as described in Microsemi MicroNote 050. MAXIMUM RATINGS Parameters/Test Conditions Junction Temperature Storage Temperature Thermal Resistance Junction-to-Case (1) Steady-State Power Dissipation @ T C = +55 ºC Forward Voltage @ 2.0 A Solder Pad Temperature @ 10 s Symbol TJ T STG R ӨJC PD VF T SP Value -65 to +175 -65 to +200 12 10 1.5 260 NOTES: 1. Derate at 0.083 W/ºC above +55 ºC. Unit o C o C o C/W W V ºC MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 1 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A MECHANICAL and PACKAGING • • • • • • CASE: Industry standard DO-4, (DO-203AA), 7/16” hex, stud with 10-32 threads, welded, hermetically sealed metal and glass. TERMINALS: Tin-lead plated or RoHS compliant matte-tin plating (commercial grade only) on nickel. POLARITY: 1N2970B – 1N3015B: Std. Polarity is anode to stud. Reverse polarity (cathode to stud) indicated by suffix “RB”. 1N3993A – 1N3998A: Std. Polarity is cathode to stud. Reverse polarity (anode to stud) indicated by suffix “RA”. MOUNTING HARDWARE: Consult factory for optional insulator, bushing solder terminal, washers, and nut. WEIGHT: Approximately 7.5 grams. See Package Dimensions on last page. PART NOMENCLATURE 1N2970 – 1N3015 series only: JAN 1N2970 R B e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant 5% Tolerance (Consult factory for other tolerances) JEDEC type number (see Electrical Characteristics table) Polarity blank = Standard (Anode to Stud) R = Reverse (Cathode to Stud) 1N3993 – 1N3998 series only: JAN 1N3993 R A e3 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant 5% Tolerance (Consult factory for other tolerances) JEDEC type number (see Electrical Characteristics table) Polarity blank = Standard (Cathode to Stud) R = Reverse (Anode to Stud) T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 2 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A SYMBOLS & DEFINITIONS Definition Symbol I ZT IR I ZM VF VR VZ Z ZT or Z ZK Regulator Current: The dc regulator current (I Z ), at a specified test point (I ZT ), near breakdown knee (I ZK ). Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Reverse Voltage: The reverse voltage dc value, no alternating component. Zener Voltage: The Zener voltage the device will exhibit at a specified current (I Z ) in its breakdown region. Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of I ZT or I ZK ) and superimposed on I ZT or I ZK respectively. T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 3 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A ELECTRICAL CHARACTERISTICS JEDEC TYPE NO. (Note 1) NOMINAL ZENER VOLTAGE V Z @ I ZT (Note 2) ZENER TEST CURRENT (I ZT ) †1N3993A †1N3994A †1N3995A †1N3996A †1N3997A †1N3998A †1N2970B †1N2971B †1N2972B †1N2973B †1N2974B †1N2975B †1N2976B †1N2977B 1N2978B †1N2979B †1N2980B 1N2981B †1N2982B 1N2983B †1N2984B †1N2985B †1N2986B 1N2987B †1N2988B †1N2989B †1N2990B †1N2991B †1N2992B †1N2993B 1N2994B †1N2995B 1N2996B †1N2997B 1N2998B †1N2999B †1N3000B †1N3001B †1N3002B †1N3003B †1N3004B †1N3005B 1N3006B †1N3007B †1N3008B †1N3009B 1N3010B †1N3011B †1N3012B 1N3013B †1N3014B †1N3015B Volts 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 30 33 36 39 43 45 47 50 51 52 56 62 68 75 82 91 100 105 110 120 130 140 150 160 175 180 200 mA 640 580 530 490 445 405 370 335 305 275 250 230 210 190 180 170 155 145 140 130 125 115 105 100 95 85 75 70 65 60 55 55 50 50 50 45 40 37 33 30 28 25 25 23 20 19 18 17 16 14 14 12 MAX. DYNAMIC IMPEDANCE (Note 3) Z ZT @ I ZT Ohms 2.0 1.5 1.2 1.1 1.0 1.1 1.2 1.3 1.5 2.0 3 3 3 3 3 3 4 4 4 4 4 5 5 6 7 8 9 10 11 12 13 14 15 15 15 16 17 18 22 25 35 40 45 55 75 100 125 175 200 250 260 300 Z ZK @ 1mA (I ZK ) Ohms 400 400 550 550 600 700 500 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 250 300 300 300 300 400 400 400 500 500 500 500 600 600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1750 1850 2000 MAX DC ZENER CURRENT (I ZM ) @ 25oC Stud Temp. (Note 4) TEMP. COEFF. α VZ mA 2440 2200 2000 1840 1680 1520 1500 1350 1180 1100 980 890 820 750 600 640 605 500 525 440 480 435 400 310 340 320 300 260 240 220 185 200 165 185 160 170 150 137 125 115 97 91 75 82 77 71 58 62 58 46 52 46 %/oC -0.060 -0.050 +0.025 +0.030 +0.040 +0.045 +0.057 +0.067 +0.070 +0.075 +0.081 +0.085 +0.079 +0.080 +0.070 +0.082 +0.083 +0.075 +0.085 +0.075 +0.086 +0.087 +0.088 +0.080 +0.090 +0.091 +0.092 +0.093 +0.094 +0.095 +0.090 +0.095 +0.090 +0.096 +0.090 +0.096 +0.097 +0.097 +0.098 +0.098 +0.099 +0.110 +0.095 +0.110 +0.110 +0.110 +0.095 +0.110 +0.110 +0.095 +0.110 +0.110 MAX** REVERSE CURRENT IR @ VR µA 100 100 50 10 10 10 150 100 50 25 25 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Volts 0.5 0.5 1.0 1.0 1.0 2.0 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 10.5 11.4 12.2 13.0 13.7 14.0 15.2 16.7 18.2 18.2 20.6 22.8 25.1 27.4 29.7 32.7 33.0 35.8 36.0 38.8 39.0 42.6 47.1 51.7 56.0 62.2 69.2 76.0 76.0 83.6 91.2 98.8 100.0 114.0 121.6 135.0 136.8 152.0 POLARITY STD. POLARITY CATHODE TO STUD STD. POLARITY ANODE TO STUD * JEDEC Registered Data. ** Not JEDEC Data. † Have JAN, JANTX and JANTXV qualifications to MIL-PRF-19500/124. See further notes on following page. T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 4 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A NOTES: 1. 1N3993A - 1N3998A and 1N2970B – 1N3015B series are +/- 5% tolerance. If a tighter tolerance is required, consult factory. 2. The electrical characteristics are measured after allowing the device to stabilize for 90 seconds with 30 C base temperature. 3. The Zener impedance (Z ZT ) is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of the dc Zener current (I ZT or I ZK ) is superimposed on I ZT or I ZK . When making Zener impedance measurements at the I ZK test point, it may be necessary to insert a 60 Hz band pass filter between the diode and voltmeter to avoid errors resulting from low level noise signals. A curve showing the variation of Zener impedance vs. Zener current for three representative types is shown in Figures 2 and 3. Also see Microsemi MicroNote 202. 4. Derate I Z linearly to 0.0 mA at +175°C, for T C > +55°C. These values of I ZM may be exceeded in the case of individual diodes. The values shown are calculated for the worst case that is a unit of +/-5% tolerance at the high voltage end of its tolerance range. Allowance has also been made for the rise in Zener voltage above V ZT , which results from Zener impedance and the increase in junction temperature as power dissipation approaches 10 watts. o T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 5 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A Pd Rated Power Dissipation - Watts GRAPHS Case (Stud) Temperature ºC ZZT, Zener Impedance (OHMS) FIGURE 1 Power Derating Curve I ZT Zener Current (mA) FIGURE 2 Typical Zener Impednace vs. Zener Current for Types Shown T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 6 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A Zener Impedance (OHMS) Zt GRAPHS (continued) I ZT Zener Current (mA) FIGURE 3 Typical Zener Impedance vs Zener Current for Types Shown T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 7 of 8 1N2970B – 1N3015B and 1N3993A – 1N3998A PACKAGE DIMENSIONS Ltr C C1 CD CH HF HT1 HT2 OAH SD SL SU UD ΦT Dimensions Inches Millimeters Min Max Min Max 0.250 6.35 0.012 0.065 0.30 1.65 0.255 0.424 6.48 10.77 0.300 0.405 7.62 10.29 0.424 0.437 10.77 11.1 0.075 0.175 1.91 4.45 0.060 0.175 1.52 4.45 0.600 0.800 15.24 20.32 0.422 0.453 10.72 11.51 0.078 1.98 0.163 0.189 4.14 4.80 0.060 0.095 1.52 2.41 Notes 5 5 6 6 7 7 2 8 NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. See “Mechanical and Packaging” for the polarity of the terminals. 3. Threads shall be 10–32 UNF–2A in accordance with FED–STD–H28. Maximum pitch diameter (SD) of plated threads is 0.1697 inch (4.31 mm). 4. Maximum torque allowed on the 10–32 UNF–2B nut when assembled on the thread is 15 inchpounds. 5. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimension C and C1 shall be flat. 6. Dimension CD cannot exceed dimension HF. 7. A chamfer or undercut on one or both ends of the hex portion is optional; minimum base diameter at the seating plane is 0.403 inch (10.24 mm). 8. Length of incomplete or undercut threads UD. 9. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0075, Rev. 3 (5/24/13) ©2013 Microsemi Corporation Page 8 of 8