APTDF400AK100G Diode Phase leg Power Module VRRM = 1000V IC = 400A @ Tc = 70°C Application K1 • • • • • A1/K2 Anti-Parallel diode Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features • • • • • • A2 • A1/K2 A2 Benefits • • • • • • Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(A V) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% TC = 25°C TC = 70°C TC = 45°C TC = 45°C Max ratings Unit 1000 V 500 400 500 3000 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF400AK100G – Rev 1 June, 2006 K1 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTDF400AK100G All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF = 400A IF = 600A IF = 400A Tj = 125°C Tj = 25°C VR = 1000V Tj = 125°C Min IF = 400A VR = 667V Min Tj = 25°C 45 Tj = 25°C Tj = 125°C Tj = 25°C 290 340 2.7 Tj = 125°C Tj = 25°C 14.6 24 Tj = 125°C 72 Tj = 125°C di/dt = 4000A/µs Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals www.microsemi.com Typ M6 M5 Unit V 480 Test Conditions IF = 400A VR = 667V di/dt = 800A/µs Max 2.7 250 1000 VR = 1000V IF=1A,VR=30V di/dt = 400A/µs Typ 2.1 2.3 1.7 µA pF Max Unit ns ns µC A 160 ns 28.4 µC 280 A Typ Max 0.14 175 125 100 5 3.5 280 Unit °C/W V °C N.m g 2-4 APTDF400AK100G – Rev 1 June, 2006 Electrical Characteristics APTDF400AK100G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.05 0.02 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) T J=175°C 1000 800 T J=125°C 600 400 T J=-55°C 200 T J=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 400 T J=125°C VR=667V 350 300 250 600 A 200 400 A 150 200 A 100 50 0 0 3.0 800 1600 2400 3200 4000 4800 -diF/dt (A/µs) IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 36 TJ=125°C VR=667V 32 600 A 28 400 A 24 20 200 A 16 12 8 0 800 1600 2400 3200 4000 4800 320 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) T J=125°C VR=667V 280 200 A 160 120 80 40 0 800 1600 2400 3200 4000 4800 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 600 2800 Duty Cycle = 0.5 T J=175°C 500 2400 2000 IF(AV) (A) C, Capacitance (pF) 400 A 200 -diF/dt (A/µs) 3200 600 A 240 1600 1200 800 400 300 200 100 400 0 0 1 10 100 VR, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-4 APTDF400AK100G – Rev 1 June, 2006 IF, Forward Current (A) 1200 APTDF400AK100G Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF400AK100G – Rev 1 June, 2006 SP6 Package outline (dimensions in mm)