MMBD3004SE SILICON EPITAXIAL PLANAR DIODE High Voltage Switching Diode 3 Features • Fast switching speed • High Conductance • High Reverse Breakdown Voltage Rating 1 2 Marking Code: "ZB" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 350 V Working Peak Reverse Voltage VRWM 300 V DC Blocking Voltage VR 300 V Continuous Forward Current IF 225 mA IFRM 625 mA IFSM 4 1 A Pd 350 mW Tj, Tstg - 65 to + 150 Peak Repetitive Forward Current Non-Repetitive Peak Forward Surge Current at t = 1 µs at t = 1 s Power Dissipation Operating and Storage Temperature Range C O Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 20 mA at IF = 100 mA at IF = 200 mA VF - 0.87 1 1.25 V Reverse Current at VR = 240 V at VR = 240 V, Tj = 150 OC IR - 100 100 nA µA V(BR)R 350 - V Total Capacitance at VR = 0 , f = 1 MHz CT - 5 pF Reverse Recovery Time at IF = IR = 30 mA , irr = 0.1 IR, RL = 100 Ω trr - 50 ns Reverse Breakdown Voltage at IR = 100 µA SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2007 MMBD3004SE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 18/12/2007