BB867... Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V (typ.15.8) Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration single LS(nH) Marking 0.6 Y * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage- VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit V (R 5k ) 1 Nov-14-2002 BB867... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 8 8.7 9.4 VR = 25 V, f = 1 MHz 0.5 0.55 0.6 VR = 28 V, f = 1 MHz 0.45 0.52 - CT1 /CT25 14 15.8 - CT1 /CT28 - 16.7 - CT/CT - - 5 % rS - 2.8 - Capacitance ratio - VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047 2 Nov-14-2002 BB867... Diode capacitance CT = (VR ) f = 1MHz 10 pF 8 CT 7 6 5 4 3 2 1 0 0 10 10 1 V 10 2 VR 3 Nov-14-2002