NCP3712ASNT1 Over Voltage Protected High Side Switch This switch is primarily intended to protect loads from transients by isolating the load from the transient energy rather than absorbing it. Features http://onsemi.com • Capable of Switching Loads of up to 200 mA without External • • • • • • • • • MARKING DIAGRAM Rboost Switch Shuts Off in Response to an Over Voltage Input Transient Features Active Turn Off for Fast Input Transient Protection Flexible Over Voltage Protection Threshold Set with External Zener Automatic Recovery after Transient Decays Below Threshold Withstands Input Transients up to 105 V Peak Guaranteed Off State with Enbl Input ESD Resistant in Accordance with the 2000 V Human Body Model Extremely Low Saturation Voltage Pb−Free Packages are Available 1 High Voltage Transient Isolation Power Switching to Electronic Modules DC Power Distribution in Line Operated Equipment Buffering Sensitive Circuits from Poorly Regulated Power Supplies Pre−conditioning of Voltage Regulator Input Voltage 1 BAG = Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Applications Include: • • • • • BAGAYW G G TSOP−6 CASE 318G INTERNAL CIRCUIT DIAGRAM/ PIN CONFIGURATION Vout Vin Q2 (5) R2 (6) R4 Q1 Vin Vout Rboost N.C. Rboost (3) (2) NCP3712ASNT1 R1 + VZ Ropt L O A D Enbl or 1 k (min) P. S. R3 − (4) VZ (1) Enbl ORDERING INFORMATION Package Shipping† NCP3712ASNT1 TSOP−6 3000/Tape & Reel NCP3712ASNT1G TSOP−6 (Pb−Free) 3000/Tape & Reel NCP3712ASNT3 TSOP−6 10,000/Tape & Reel Device SW Figure 1. Typical Application Circuit NCP3712ASNT3G TSOP−6 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 4 1 Publication Order Number: NCP3712ASNT1/D NCP3712ASNT1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1) Rating Symbol Value Unit Vio 105 V Reverse Input−to−Vz. Voltage Vin(rev) −9.0 V Reverse Input−to−Rboost Voltage Vin(rev) −5.0 V Output Load Current − Continuous Iload −300 mA Enbl Input Current − Continuous Ienbl 5.0 mA Input−to−Output Voltage Vz Input Current − Continuous Iz 3.0 mA Iboost 10 mA Junction Temperature TJ 125 °C Operating Ambient Temperature Range TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Device Power Dissipation (Minimum Footprint) PD 300 mW − 2.4 mW/°C ILatchup 200 200 mA Rboost Input Current − Continuous Derate Above 25°C Latchup Performance: Positive Negative Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015. Machine Model Method 150 V. KEY A+ FB* 1N4004 0.01 mF TYP Vout Enbl 0.027 mF TYP 1 N.C. Ienbl 18 V TYP R opt 2 Rboost Iboost FB* NCP3712 ASNT1 6 Vin Iload Renbl 5 VZ 4 3 0−500 W Rload 1.0 k TYP IZ A− *FB = MMZ2012 Y601B Figure 2. Typical Applications Circuit for Load Dump Transient Protection 120 13.5 V SUPPLY RAIL “ENABLE NOT” INPUT 10 50% AMPLITUDE tpLH TYPICAL INPUT TRANSIENT 100 DEVICE OUTPUT VOLTAGE AMPLITUDE (V) AMPLITUDE (V) 15 LOAD DEPENDENT EXP DECAY 5 80 60 13.5 V SUPPLY RAIL 40 Voff 20 0 LOAD DEPENDENT OUTPUT EXP DECAY Von 0 0 5 10 15 30 20 25 TIME (ms) 35 40 45 50 0 Figure 3. Enable NOT Switching Waveforms 50 100 150 200 TIME (ms) 250 300 Figure 4. Load Dump Waveforms http://onsemi.com 2 350 NCP3712ASNT1 ELECTRICAL CHARACTERISTICS (Vin = 12.5 VDC Ref to Gnd, TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit 105 − − − −0.7 − − − −100 13 − − 150 − − 15.5 − 18.7 − 0.2 0.5 − − − − − − −200 −200 −300 8.5 − 10.5 − − −1.0 tPHL tPLH − − 1.5 1.5 − − tf tr − − 75 400 − − Input Leakage Resistor R2 7.0 10 13 kW Input Resistor R1 3.3 4.7 6.1 kW Output Leakage Resistor R4 1.4 2.4 3.2 kW Enable Input Resistor R3 1.4 2.4 3.2 kW OFF CHARACTERISTICS V(BRio) Input−Output Breakdown Voltage (@ Iout = 200 mA) Output Reverse Breakdown Voltage (@ Iout = −1.0 mA Pulse) Vdc V(−BRout) Output Leakage Current (Vin = Venbl = 30 V, TA = 25°C) Iload(off) Guaranteed “Off” State “ENBL NOT” Voltage (IO ≤ 100 mA) Venbl(off) Required “Off” State Iz Current (Rload = 100 W) Iz(off) Vin(off) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 W) Voff Vdc mAdc Vdc mAdc Vdc ON CHARACTERISTICS Input−Output On Voltage (Io = 100 mA, Ienbl = −3.0 mA) Vio(on) Output Load Current ⎯ Continuous (Ienbl = −3.0 mA, Vio(on) = 0.5 Vdc) (Iboost = −9.0 mA, Vio(on) = 0.5 Vdc) (Iboost = −9.0 mA, Vio(on) = 0.6 Vdc) Io(on) Vin(on) (Vz = 16 V, Iload = 100 mA, Renbl = 1500 W) Von “ENBL NOT” Input Current (Io = 100 mA, Vio(on) = 0.35 Vdc, Renbl = 1500 W) Ienbl Vdc mAdc Vdc mAdc SWITCHING CHARACTERISTICS mS Propagation Delay Time: Hi to Lo Prop Delay; Fig. 3 (Vin = Venbl = 13.5 V) Lo to Hi Prop Delay; Fig. 3 (Vin = 13.5 V, Venbl = 0 V) hS Transition Times: Fall Time; Fig. 4 (Vin = Venbl = 13.5 V) Rise Time; Fig. 4 (Vin = Venbl = 0 V) INTERNAL RESISTORS http://onsemi.com 3 NCP3712ASNT1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b e q c A 0.05 (0.002) L A1 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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