Seme LAB BDS11IG Silicon npn epitaxial base in to257 metal package Datasheet

BDS10IG
BDS11IG
BDS12IG
SEME
LAB
MECHANICAL DATA
Dimensions in mm(inches)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
Dia.
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
13.38 (0.527)
13.64 (0.537)
10.41 (0.410)
10.67 (0.420)
16.38 (0.645)
16.89 (0.665)
SILICON NPN
EPITAXIAL BASE IN
TO257 METAL PACKAGE
4.83 (0.190)
5.08 (0.200)
FEATURES
1 2 3
12.07 (0.500)
19.05 (0.750)
• HERMETIC TO257 ISOLATED METAL
PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
0.64 (0.025)
Dia.
0.89 (0.035)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO257 – TO257 Isolated Metal Package.
Pin 1 – Base
Pin 2 – Collector
• SCREENING TO CECC LEVELS
• ALSO AVAILABLE IN TO220 METAL AND
TO220 CERAMIC SURFACE MOUNT
PACKAGES
Pin 3 – Emitter
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDS10
60V
BDS11
80V
BDS12
100V
60V
80V
100V
VCBO
Collector - Base voltage (IE = 0)
VCEO
Collector - Emitter voltage (IB = 0)
VEBO
Emitter - Base voltage (IC = 0)
5V
IE , IC
Emitter , Collector current
15A
IB
Base current
5A
Ptot
Total power dissipation at Tcase £ 75°C
Tstg
Storage Temperature
–65 TO 200°C
Tj
Junction Temperature
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
90W
Prelim. 9/98
BDS10IG
BDS11IG
BDS12IG
SEME
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE = 0)
ICEO
Collector cut-off current
(IB = 0)
IEBO
Emitter cut-off current
(IC = 0)
VCEO(sus)*
VCE(sat)*
VBE(sat)*
VBE*
hFE*
fT
BDS10
BDS11
BDS12
BDS10
BDS11
BDS12
Min.
Typ.
Max.
VCB = 60V
VCB = 80V
VCB = 100V
VCE = 30V
VCE = 40V
VCE = 50V
500
500
500
1
1
1
VEB = 5V
BDS10
Collector - Emitter
BDS11
sustaining voltage (IB = 0)
BDS12
Collector - Emitter
IC = 5A
saturation voltage
IC = 10A
Base - Emitter
IC = 10A
saturation voltage
Base - Emitter voltage
IC = 5A
IC = 0.5A
DC Current gain
IC = 5A
IC = 10A
Transition frequency
IC = 0.5A
mA
mA
mA
1
IC = 100mA
Unit
60
80
100
V
IB = 0.5A
IB = 2.5A
1
3
V
IB = 2.5A
2.5
V
VCE = 4V
VCE = 4V
VCE = 4V
VCE = 4V
VCE = 4V
1.5
250
150
V
40
15
5
3
MHz
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
ton
ts
tr
On Time
Storage Time
Fall Time
(td + tr)
Test Conditions
Max.
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
Max. 1.4°C/W
RTHcase-sink
Thermal resistance case - heatsink **
Typ. 1.0°C/W
RTHj-a
Thermal resistance junction - ambient
Max. 80°C/W
** Smooth flat surface using thermal grease.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 9/98
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