Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SOT-523 SWITCHING DIODE FEATURES Power dissipation 150 PD: mW (Tamb=25℃) Forward Current 75 m A IF: Reverse Voltage 85 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Diode Symbol BAV99T Marking: JE unless otherwise specified) Test conditions MIN MAX UNIT V(BR) IR= 100µA IR1 VR=75V 2 µA IR2 VR=25V 0.03 µA IF=1mA 715 IF=10mA 855 IF=50mA 1000 IF=150mA 1250 VR=0V, f=1MHz 1.5 pF 4 nS 85 V leakage current voltage capacitance Reverse recovery time VF CD t rr mV Typical Characteristics BAS16T/BAW56T/BAV70T/BAV99T