ACTIVE-SEMI ACT8600 Advanced pmu for ingenic jz4760/60b/70 processor Datasheet

ACT8600
Rev 3, 15-Nov-12
Advanced PMU for Ingenic JZ4760/60B/70 Processors
FEATURES
GENERAL DESCRIPTION
• Optimized for Ingenic JZ4760, JZ4760B, and
The ACT8600 is a complete, cost effective, highlyefficient ActivePMUTM power management solution,
optimized for the unique power, voltagesequencing, and control requirements of the Ingenic
JZ4760, JZ4760B and JZ4770 processors.
JZ4770 Processors
•
•
•
•
•
•
•
•
•
•
Three Step-Down DC/DC Converters
One Step-Up DC/DC Converter
USB OTG Switch with 600mA Current Limit
Four Low-Noise LDOs
Two Low IQ Keep-Alive LDOs
Backup Battery Charger
Single-Cell Li+ActivePathTM Battery Charger
I2CTM Serial Interface
Interrupt Controller
This device features three highly efficient step-down
DC/DC converters, one step-up DC/DC converter,
four low-noise, low-dropout linear regulators, and
two Low IQ always on Keep-Alive linear regulators,
a current limit switch for USB OTG, along with a
complete battery charging solution featuring the
advanced ActivePathTM system-power selection
function.
The ACT8600 is available in a compact, Pb-Free
and RoHS-compliant TQFN55-40 package.
Power On Reset Interface and Sequencing
Controller
• Minimum External Components
• 5×5mm TQFN55-40 Package
− 0.75mm Package Height
− Pb-Free and RoHS Compliant
SYSTEM BLOCK DIAGRAM
ActivePMU
TM
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-1-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TABLE OF CONTENTS
General Information ..................................................................................................................................... p. 01
Functional Block Diagram ............................................................................................................................ p. 04
Ordering Information .................................................................................................................................... p. 05
Pin Configuration ......................................................................................................................................... p. 05
Pin Descriptions ........................................................................................................................................... p. 06
Absolute Maximum Ratings ......................................................................................................................... p. 08
I2C Interface Electrical Characteristics ........................................................................................................ p. 09
Global Register Map .................................................................................................................................... p. 10
Register and Bit Descriptions ...................................................................................................................... p. 11
System Control Electrical Characteristics.................................................................................................... p. 16
Step-Down DC/DC Electrical Characteristics .............................................................................................. p. 17
Step-Up DC/DC Electrical Characteristics................................................................................................... p. 18
Low-Noise LDO Electrical Characteristics ............................................................................................ p. 19
Low-IQ LDO Electrical Characteristics ........................................................................................................ p. 20
OTG Subsystem Electrical Characteristics.................................................................................................. p. 20
ActivePathTM Charger Electrical Characteristics........................................................................................ p. 21
Typical Performance Characteristics…………………………………………………………………………......p. 23
System Control Information ......................................................................................................................... p. 34
Interfacing with the Ingenic JZ4770 Processor .............................................................................. p. 34
Control Signals ............................................................................................................................... p. 34
Power Control Sequences .............................................................................................................. p. 34
Functional Description ................................................................................................................................. p. 36
I2C Interface .................................................................................................................................... p. 36
Interrupt Service Routine ................................................................................................................ p. 36
Housekeeping Functions ................................................................................................................ p. 36
Thermal Protection ......................................................................................................................... p. 37
Step-Down DC/DC Regulators .................................................................................................................... p. 38
General Description ........................................................................................................................ p. 38
Output Current Capability ............................................................................................................... p. 38
100% Duty Cycle Operation ........................................................................................................... p. 38
Operating Mode .............................................................................................................................. p. 38
Synchronous Rectification .............................................................................................................. p. 38
Soft-Start ......................................................................................................................................... p. 38
Compensation................................................................................................................................. p. 38
Configuration Options ..................................................................................................................... p. 38
Configurable Step-Up DC/DC ...................................................................................................................... p. 39
General Description ........................................................................................................................ p. 39
5V Applications ............................................................................................................................... p. 39
Compensation and Stability ............................................................................................................ p. 39
Configuration Options ..................................................................................................................... p. 39
Low-Dropout Linear Regulators ................................................................................................................... p. 40
General Description ........................................................................................................................ p. 40
LDO Output Voltage Programming................................................................................................. p. 40
Enabling and Disabling the LDOs................................................................................................... p. 40
Power-OK ....................................................................................................................................... p. 40
Interrupts ......................................................................................................................................... p. 40
Optional LDO Output Discharge ..................................................................................................... p. 40
Output Capacitor Selection ............................................................................................................. p. 40
Backup Battery Charger ................................................................................................................. p. 40
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-2-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TABLE OF CONTENTS
USB OTG ..................................................................................................................................................... p. 43
General Description ........................................................................................................................ p. 43
TM
Single-Cell Li+ ActivePath Charger ......................................................................................................... p. 44
General Description ........................................................................................................................ p. 44
TM
ActivePath Architecture............................................................................................................... p. 44
System Configuration Optimization ................................................................................................ p. 44
Input Protection for CHGIN ............................................................................................................. p. 44
Battery Management ...................................................................................................................... p. 44
Charge Current Programming ........................................................................................................ p. 45
Charge Input Interrupts ................................................................................................................... p. 45
Charge-Control State Machine ....................................................................................................... p. 46
Thermal Regulation ........................................................................................................................ p. 48
Charge Safety Timers ..................................................................................................................... p. 48
Charge Status Indicator .................................................................................................................. p. 48
Reverse-Current Protection ............................................................................................................ p. 48
Battery Temperature Monitoring ..................................................................................................... p. 48
TQFN55-40 Package Outline and Dimensions ............................................................................................ p.50
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-3-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
FUNCTIONAL BLOCK DIAGRAM
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-4-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
ORDERING INFORMATIONc
PART NUMBER VOUT1 VOUT2 VOUT3 VOUT4 VOUT5 VOUT6 VOUT7 VOUT8 VOUT9 VOUT10 PACKAGE PINS
ACT8600QJ162-T 1.2V 3.3V 1.8V
5V
2.5V 3.3V 1.2V 1.8V 3.3V 1.2V TQFN55-40
40
TEMPERATUR
E RANGE
-40°C to +85°C
c: All Active-Semi components are RoHS Compliant and with Pb-free plating unless specified differently. The term Pb-free means
semiconductor products that are in compliance with current RoHS (Restriction of Hazardous Substances) standards.
2: Standard product options are identified in this table. Contact factory for custom options. Minimum order quantity is 12,000 units.
ACT8600QJ_ _ _ -T
Active-Semi
Product Number
Package Code
Pin Count
Option Code
Tape and Reel
PIN CONFIGURATION
OUT10
PWREN
GP4
OUT9
nIRQ
5VIN
VP3
SW3
VBUS
OUT3
GP3
CHGIN
VSYS
INL
OUT5
VSYS
OUT7
OUT6
BAT
OUT8
TOP VIEW
Thin - QFN (TQFN55-40)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-5-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
1, 40
BAT
2
nSTAT
Active-Low Open-Drain Charger Status Output. nSTAT has a 8mA (typ.) current limit, allowing it
to directly drive an indicator LED without additional external components.
3
nRSTO
Active low open-drain Reset Output.
4
REFBP
Reference Bypass. Connect a 0.047μF ceramic capacitor from REFBP to GA.
5
GA
Ground.
6
TH
Temperature Sensing Input.
7
ISET
8
CHGLEV
9
SDA
Data Input for I2C Serial Interface. Data is read on the rising edge of SCL.
10
SCL
Clock Input for I2C Serial Interface.
11
OUT8
REG8 Output. Bypass it to ground with a 2.2µF capacitor.
12
OUT7
REG7 Output. Bypass it to ground with a 2.2µF capacitor.
13
INL
14
OUT6
REG6 Output. Bypass it to ground with a 2.2µF capacitor.
15
OUT5
REG5 Output. Bypass it to ground with a 2.2µF capacitor.
16
OUT3
Output voltage sense for REG3.
17
VP3
Power input for REG3. Bypass to GP3 with a high quality ceramic capacitor placed as close to the
IC as possible.
18
GP3
Power Ground for REG3. Connect GA, GP12, GP3 and GP4 together at a single point as close to
the IC as possible.
19
SW3
Switch Node for REG3.
20
GP4
Power Ground for REG4. Connect GA, GP12 and GP3 together at a single point as close to the IC
as possible.
Battery charger output. Connect this pin directly to the battery anode (+ terminal).
Charge Current Set. Program the maximum charge current by connecting a resistor (RISET)
between ISET and GA.
Charge Current Selection Input.
Power Input for the LDOs. Bypass to GA with a high quality ceramic capacitor placed as close to
the IC as possible.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-6-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
PIN DESCRIPTIONS CONT’D
PIN
NAME
DESCRIPTION
21
SW4
Switch Node for REG4.
22
OUT4
REG4 Output.
23
NC
24
OUT2
25
VP2
Power Input for REG2. Bypass to GP12 with a high quality ceramic capacitor placed to the IC as
close as possible.
26
SW2
Switch Node for REG2.
27
GP12
Power Ground for REG1 and REG2. Connect GA, GP12 and GP3 together at a single point as
close to the IC as possible.
28
SW1
Switch Node for REG1.
29
VP1
Power Input for REG1. Bypass to GP12 with a high quality ceramic capacitor placed to the IC as
close as possible.
30
OUT1
31
PWREN
32
nIRQ
33
OUT10
REG10 Output. Bypass it to GA with a 0.47μF capacitor.
34
OUT9
REG9 Output. Bypass it to GA with a 1μF capacitor.
35
5VIN
5V Input pin for OTG switch (optionally from OUT4 or external 5V source).
36
VBUS
USB VBUS.
37
CHGIN
Power Input for the Battery Charger. Bypass CHGIN to GA with a capacitor placed as close to
the IC as possible. The battery charger is automatically enabled when a valid voltage is present
on CHGIN .
38, 39
VSYS
System Output Pins. Bypass to GA with a 10μF or larger ceramic capacitor.
EP
EP
No Connect.
Output Voltage Sense for REG2.
Output Voltage Sense for REG1.
Master enable pin.
Open-Drain Interrupt Output.
Exposed Pad. Must be soldered to ground on PCB.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-7-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
VP1, VP2 to GP12
VP3 to GP3
-0.3 to + 6
V
BAT, VSYS, INL, VBUS, 5VIN to GA
-0.3 to + 6
V
CHGIN to GA
-0.3 to + 14
V
SW1, OUT1 to GP12
-0.3 to (VVP1 + 0.3)
V
SW2, OUT2 to GP12
-0.3 to (VVP2 + 0.3)
V
SW3, OUT3 to GP3
-0.3 to (VVP3 + 0.3)
V
SW4, OUT4 to GP4
-0.3 to + 42
V
nIRQ, nRSTO, nSTAT to GA
-0.3 to + 6
V
-0.3 to (VVSYS + 0.3)
V
-0.3 to (VINL + 0.3)
V
-0.3 to + 0.3
V
Operating Ambient Temperature
-40 to 85
°C
Maximum Junction Temperature
125
°C
Maximum Power Dissipation TQFN55-40 (Thermal Resistance=30°C/W)
3.2
W
-65 to 150
°C
300
°C
PWREN, SCL, SDA, CHGLEV, TH, ISET, REFBP to GA
OUT5, OUT6, OUT7, OUT8, OUT9, OUT10 to GA
GP12, GP3, GP4 to GA
Storage Temperature
Lead Temperature (Soldering, 10 sec)
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-8-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
I2C INTERFACE ELECTRICAL CHARACTERISTICS
(VVSYS = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
SCL, SDA Input Low
VVSYS = 3.1V to 5.5V, TA = -40ºC to 85ºC
SCL, SDA Input High
VVSYS = 3.1V to 5.5V, TA = -40ºC to 85ºC
TYP
MAX
UNIT
0.35
V
1.55
V
SDA Leakage Current
0
1
µA
SCL Leakage Current
0
1
µA
0.35
V
SDA Output Low
IOL = 5mA
SCL Clock Period, tSCL
1.5
µs
SDA Data Setup Time, tSU
100
ns
SDA Data Hold Time, tHD
300
ns
Start Setup Time, tST
For Start Condition
100
ns
Stop Setup Time, tSP
For Stop Condition
100
ns
Figure 1:
I2C Compatible Serial Bus Timing
tSCL
SCL
tST
tHD
tSU
tSP
SDA
Start
condition
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Stop
condition
-9-
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
GLOBAL REGISTER MAP
BITS
OUTPUT
SYS
SYS
REG1
REG1
REG2
REG2
ADDRESS
0x00
0x01
0x10
0x12
0x20
0x22
REG3
0x30
REG3
0x32
REG4
0x40
REG4
0x41
REG5
REG5
REG6
REG6
REG7
REG7
0x50
0x51
0x60
0x61
0x70
0x71
REG8
0x80
REG8
0x81
REG910
0x91
APCH
0xA1
APCH
APCH
APCH
OTG
OTG
INT
0xA8
0xA9
0xAA
0xB0
0xB2
0xC1
NAME
D7
D6
D5
D4
D3
D2
D1
D0
nSYSLEVMSK
nSYSSTAT
VSYSDAT
Reserved
SYSLEV[3]
SYSLEV[2]
SYSLEV[1]
SYSLEV[0]
DEFAULTc
0
R
R
0
0
0
0
0
NAME
nTMSK
TSTAT
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
DEFAULTc
0
R
0
0
0
0
0
0
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
0
1
1
0
0
0
NAME
ON
Reserved
Reserved
Reserved
Reserved
PHASE
nFLTMSK
OK
DEFAULTc
1
0
0
0
0
0
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
1
1
1
0
0
1
NAME
ON
Reserved
Reserved
Reserved
Reserved
PHASE
nFLTMSK
OK
DEFAULTc
1
0
0
0
0
1
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
1
0
0
1
0
0
NAME
ON
Reserved
Reserved
Reserved
Reserved
PHASE
nFLTMSK
OK
DEFAULTc
1
0
0
0
0
0
0
R
NAME
VSET[7]
VSET[6]
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
1
0
1
0
1
0
0
NAME
ON
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
OK
DEFAULTc
0
0
0
0
0
0
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
1
1
1
0
0
0
1
NAME
ON
Reserved
Reserved
Reserved
Reserved
DIS
nFLTMSK
OK
DEFAULTc
1
0
0
0
0
1
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
1
1
1
0
0
1
NAME
ON
Reserved
Reserved
Reserved
Reserved
DIS
nFLTMSK
OK
DEFAULTc
0
0
0
0
0
1
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
0
1
1
0
0
0
NAME
ON
Reserved
Reserved
Reserved
Reserved
DIS
nFLTMSK
OK
DEFAULTc
0
0
0
0
0
1
0
R
NAME
Reserved
Reserved
VSET[5]
VSET[4]
VSET[3]
VSET[2]
VSET[1]
VSET[0]
DEFAULTc
0
0
1
0
0
1
0
0
NAME
ON
Reserved
Reserved
Reserved
Reserved
DIS
nFLTMSK
OK
DEFAULTc
0
0
0
0
0
1
0
R
NAME
ON9
ON10
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
DEFAULTc
1
0
0
0
0
0
0
0
NAME
SUSCHG
Reserved
TOTTIMO[1]
TOTTIMO[0]
PRETIMO[1]
PRETIMO[0]
CHGLEV
OVPSET[0]
DEFAULTc
0
0
1
0
1
0
0
0
NAME
TIMRSTAT
TEMPSTAT
INSTAT
CHGSTAT
TIMRDAT
TEMPDAT
INDAT
CHGDAT
DEFAULTc
R
R
R
R
R
R
R
R
NAME
TIMRTOT
TEMPIN
INCON
CHGEOCIN
TIMRPRE
TEMPOUT
INDIS
CHGEOCOUT
DEFAULTc
0
0
0
0
0
0
0
0
NAME
CHG_ACIN
CHG_USB
CSTATE[0]
CSTATE[1]
Reserved
Reserved
Reserved
CHGLEVSTAT
DEFAULTc
R
R
R
R
R
R
R
R
NAME
ONQ1
ONQ2
ONQ3
Q1OK
Q2OK
VBUSSTAT
DBILIMQ3
VBUSDAT
DEFAULTc
0
0
1
R
R
R
0
R
NAME
INVBUSR
INVBUSF
Reserved
Reserved
nFLTMSKQ1
nFLTMSKQ2
nVBUSMSK
Reserved
DEFAULT
0
0
0
0
0
0
0
0
NAME
INTADR7
INTADR6
INTADR5
INTADR4
INTADR3
INTADR2
INTADR1
INTADR0
DEFAULT
R
R
R
R
R
R
R
R
c: Default values of ACT8600QJ162-T.
Note: Every Reserved bit should be kept as Default Value
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 10 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
REGISTER AND BIT DESCRIPTIONS
OUTPUT ADDRESS BIT
NAME
ACCESS
DESCRIPTION
VSYS Voltage Level Interrupt Mask. Set this bit to 1 to unmask
the interrupt. See the Programmable System Voltage Monitor
section for more information
SYS
0x00
[7]
nSYSLEVMSK
R/W
SYS
0x00
[6]
nSYSSTAT
R
System Voltage Status. Value is 1 when SYSLEV interrupt is
generated, value is 0 otherwise.
SYS
0x00
[5]
VSYSDAT
R
VSYS Voltage Monitor real time status. Value is 1 when VVSYS <
SYSLEV, value is 0 otherwise.
SYS
0x00
[4]
-
R
Reserved.
SYS
0x00
[3:0]
SYSLEV
R/W
System Voltage Detect Threshold. Defines the SYSLEV voltage
threshold. See the Programmable System Voltage Monitor
section for more information.
SYS
0x01
[7]
nTMSK
R/W
Thermal Interrupt Mask. Set this bit to 1 to unmask the interrupt.
SYS
0x01
[6]
TSTAT
R
Thermal Interrupt Status. Value is 1 when a thermal interrupt is
generated, value is 0 otherwise.
SYS
0x01
[5:0]
-
R
Reserved.
REG1
0x10
[7:6]
-
R
Reserved.
REG1
0x10
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage Programming
section for more information.
REG1
0x12
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit
to 0 to disable the regulator.
REG1
0x12
[6:3]
-
R
Reserved.
REG1
0x12
[2]
PHASE
R/W
Regulator Phase Control. Set bit to 1 for the regulator to operate
180° out of phase with the oscillator, clear bit to 0 for the
regulator to operate in phase with the oscillator.
REG1
0x12
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable fault-interrupts,
clear bit to 0 to disable fault-interrupts.
REG1
0x12
[0]
OK
R
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
REG2
0x20
[7:6]
-
R
Reserved.
REG2
0x20
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage Programming
section for more information.
REG2
0x22
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit
to 0 to disable the regulator.
REG2
0x22
[6:3]
-
R
Reserved.
REG2
0x22
[2]
PHASE
R/W
Regulator Phase Control. Set bit to 1 for the regulator to operate
180° out of phase with the oscillator, clear bit to 0 for the
regulator to operate in phase with the oscillator.
REG2
0x22
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable fault-interrupts,
clear bit to 0 to disable fault-interrupts.
REG2
0x22
[0]
OK
R
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
- 11 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
REGISTER AND BIT DESCRIPTIONS CONT’D
OUTPUT
ADDRESS
BIT
NAME
ACCESS
DESCRIPTION
REG3
0x30
[7:6]
-
R
REG3
0x30
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG3
0x32
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear
bit to 0 to disable the regulator.
REG3
0x32
[6:3]
-
R
Reserved.
Reserved.
REG3
0x32
[2]
PHASE
R/W
Regulator Phase Control. Set bit to 1 for the regulator to
operate 180° out of phase with the oscillator, clear bit to 0 for
the regulator to operate in phase with the oscillator.
REG3
0x32
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable faultinterrupts, clear bit to 0 to disable fault-interrupts.
REG3
0x32
[0]
OK
R
REG4
0x40
[7:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG4
0x41
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear
bit to 0 to disable the regulator.
REG4
0x41
[6:1]
-
R
Reserved.
REG4
0x41
[0]
OK
R
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
REG5
0x50
[7:6]
-
R
Reserved.
REG5
0x50
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG5
0x51
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear
bit to 0 to disable the regulator.
REG5
0x51
[6:3]
-
R
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
Reserved.
REG5
0x51
[2]
DIS
R/W
Output Discharge Control. When activated, LDO output is
discharged to GA through 1.5kΩ resistor when in shutdown.
Set bit to 1 to enable output voltage discharge in shutdown,
clear bit to 0 to disable this function.
REG5
0x51
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable faultinterrupts, clear bit to 0 to disable fault-interrupts.
REG5
0x51
[0]
OK
R
REG6
0x60
[7:6]
-
R
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
Reserved.
REG6
0x60
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG6
0x61
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator, clear
bit to 0 to disable the regulator.
REG6
0x61
[6:3]
-
R
Reserved.
REG6
0x61
[2]
DIS
R/W
Output Discharge Control. When activated, LDO output is
discharged to GA through 1.5kΩ resistor when in shutdown.
Set bit to 1 to enable output voltage discharge in shutdown,
clear bit to 0 to disable this function.
REG6
0x61
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable faultinterrupts, clear bit to 0 to disable fault-interrupts.
REG6
0x61
[0]
OK
R
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
- 12 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
REGISTER AND BIT DESCRIPTIONS CONT’D
OUTPUT
ADDRESS
BIT
NAME
ACCESS
REG7
0x70
[7:6]
-
R
DESCRIPTION
Reserved.
REG7
0x70
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG7
0x71
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator,
clear bit to 0 to disable the regulator.
REG7
0x71
[6:3]
-
R
Reserved.
REG7
0x71
[2]
DIS
R/W
Output Discharge Control. When activated, LDO output is
discharged to GA through 1.5kΩ resistor when in shutdown.
Set bit to 1 to enable output voltage discharge in shutdown,
clear bit to 0 to disable this function.
REG7
0x71
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable faultinterrupts, clear bit to 0 to disable fault-interrupts.
REG7
0x71
[0]
OK
R
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
REG8
0x80
[7:6]
-
R
Reserved.
REG8
0x80
[5:0]
VSET
R/W
Output Voltage Selection. See the Output Voltage
Programming section for more information.
REG8
0x81
[7]
ON
R/W
Regulator Enable Bit. Set bit to 1 to enable the regulator,
clear bit to 0 to disable the regulator.
REG8
0x81
[6:3]
-
R
REG8
0x81
[2]
DIS
R/W
Output Discharge Control. When activated, LDO output is
discharged to GA through 1.5kΩ resistor when in shutdown.
Set bit to 1 to enable output voltage discharge in shutdown,
clear bit to 0 to disable this function.
REG8
0x81
[1]
nFLTMSK
R/W
Regulator Fault Mask Control. Set bit to 1 enable faultinterrupts, clear bit to 0 to disable fault-interrupts.
REG8
0x81
[0]
OK
R
REG910
0x91
[7]
ON9
R/W
REG9 Enable Bit. Set bit to 1 to enable the regulator, clear bit
to 0 to disable the regulator.
REG910
0x91
[6]
ON10
R/W
REG10 Enable Bit. Set bit to 1 to enable the regulator, clear
bit to 0 to disable the regulator.
REG910
0x91
[5:0]
-
R
APCH
0xA1
[7]
SUSCHG
R/W
APCH
0xA1
[6]
-
R
APCH
0xA1
[5:4]
TOTTIMO
R/W
Total Charge Time-out Selection. See the Charge Safety
Timers section for more information.
APCH
0xA1
[3:2]
PRETIMO
R/W
Precondition Charge Time-out Selection. See the Charge
Safety Timers section for more information.
APCH
0xA1
[1]
CHGLEV
R/W
Charge Current Selection Input. See Charge Current
Programming Section.
APCH
0xA1
[0]
OVPSET
R/W
Input Over-Voltage Protection Threshold Selection. See the
Input Over-Voltage Protection section for more information.
R/W
Charge Time-out Interrupt Status. Set this bit with
TIMRPRE[ ] and/or TIMRTOT[ ] to 1 to generate an interrupt
when charge safety timers expire, read this bit to get charge
time-out interrupt status. See the Charge Safety Timers
section for more information.
APCH
0xA8
[7]
TIMRSTAT1
Reserved.
Regulator Power-OK Status. Value is 1 when output voltage
exceeds the power-OK threshold, value is 0 otherwise.
Reserved.
Charge Suspend Control Input. Set bit to 1 to suspend
charging, clear bit to 0 to allow charging to resume.
Reserved.
c: Valid only when CHGIN UVLO Threshold<VCHGIN<CHGIN OVP Threshold.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 13 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
REGISTER AND BIT DESCRIPTIONS CONT’D
OUTPUT
APCH
APCH
ADDRESS
0xA8
0xA8
BIT
[6]
[5]
NAME
TEMPSTAT1
INSTAT
ACCESS
DESCRIPTION
R/W
Battery Temperature Interrupt Status. Set this bit with
TEMPIN[ ] and/or TEMPOUT[ ] to 1 to generate an interrupt
when a battery temperature event occurs, read this bit to get
the battery temperature interrupt status. See the Battery
Temperature Monitoring section for more information.
R/W
Input Voltage Interrupt Status. Set this bit with INCON[ ] and/
or INDIS[ ] to generate an interrupt when UVLO or OVP
condition occurs, read this bit to get the input voltage
interrupt status. See the Charge Current Programming
section for more information.
APCH
0xA8
[4]
CHGSTAT1
R/W
Charge State Interrupt Status. Set this bit with
CHGEOCIN[ ] and/or CHGEOCOUT[ ] to 1 to generate an
interrupt when the state machine gets in or out of EOC state,
read this bit to get the charger state interrupt status. See the
State Machine Interrupts section for more information.
APCH
0xA8
[3]
TIMRDAT1
R
Charge Timer Status. Value is 1 when precondition time-out
or total charge time-out occurs. Value is 0 in other case.
APCH
0xA8
[2]
TEMPDAT1
R
Temperature Status. Value is 0 when battery temperature is
outside of valid range. Value is 1 when battery temperature is
inside of valid range.
APCH
0xA8
[1]
INDAT
R
Input Voltage Status. Value is 1 when a valid input at CHGIN
is present. Value is 0 when a valid input at CHGIN is not
present.
APCH
0xA8
[0]
CHGDAT1
R
Charge State Machine Status. Value is 1 indicates the
charger state machine is in EOC state, value is 0 indicates
the charger state machine is in other states.
APCH
APCH
APCH
0xA9
0xA9
0xA9
[7]
[6]
[5]
TIMRTOT
TEMPIN
INCON
R/W
Total Charge Time-out Interrupt Control. Set both this bit and
TIMRSTAT[ ] to 1 to generate an interrupt when a total
charge time-out occurs. See the Charge Safety Timers
section for more information.
R/W
Battery Temperature Interrupt Control. Set both this bit and
TEMPSTAT[ ] to 1 to generate an interrupt when the battery
temperature goes into the valid range. See the Battery
Temperature Monitoring section for more information.
R/W
Input Voltage Interrupt Control. Set both this bit and
INSTAT[ ] to 1 to generate an interrupt when CHGIN input
voltage goes into the valid range. See the Charge Current
Programming section for more information.
APCH
0xA9
[4]
CHGEOCIN
R/W
Charge State Interrupt Control. Set both this bit and
CHGSTAT[ ] to 1 to generate an interrupt when the state
machine goes into the EOC state. See the State Machine
Interrupts section for more information.
APCH
0xA9
[3]
TIMRPRE
R/W
PRECHARGE Time-out Interrupt Control. Set both this bit
and TIMRSTAT[ ] to 1 to generate an interrupt when a
PRECHARGE time-out occurs. See the Charge Safety
Timers section for more information.
R/W
Battery Temperature Interrupt Control. Set both this bit and
TEMPSTAT[ ] to 1 to generate an interrupt when the battery
temperature goes out of the valid range. See the Battery
Temperature Monitoring section for more information.
APCH
0xA9
[2]
TEMPOUT
c: Valid only when CHGIN UVLO Threshold<VCHGIN<CHGIN OVP Threshold.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 14 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
REGISTER AND BIT DESCRIPTIONS CONT’D
OUTPUT ADDRESS
APCH
0xA9
BIT
[1]
NAME
INDIS
ACCESS
DESCRIPTION
R/W
Input Voltage Interrupt Control. Set both this bit and
INSTAT[ ] to 1 to generate an interrupt when CHGIN input
voltage goes out of the valid range. See the Charge Current
Programming section for more information.
Charge State Interrupt Control. Set both this bit and
CHGSTAT[ ] to 1 to generate an interrupt when the state
machines jumps out of the EOC state. See the State Machine
Interrupts section for more information.
APCH
0xA9
[0]
CHGEOCOUT
R/W
APCH
0xAA
[7]
CHG_ACIN
R
Charge source indicator. Value is 1 when charging from AC
source and value is 0 when charging from other source.
APCH
0xAA
[6]
CHG_USB
R
Charge source indicator. Value is 1 when charging from USB
source and value is 0 when charging from other source.
APCH
0xAA
[5:4]
CSTATE
R
Charge State. Values indicate the current charging state. See
the State Machine Interrupts section for more information.
APCH
0xAA
[3:1]
-
R
Reserved.
APCH
0xAA
[0]
CHGLEVSTAT
R
CHGLEV pin status. Value is 0 if CHGLEVSTAT is logic low;
value is 1 otherwise.
OTG
0xB0
[7]
ONQ1
R/W
OTG Q1 Enable Bit. Set bit to 1 to turn on Q1; clear bit to 0 to
turn off Q1.
OTG
0xB0
[6]
ONQ2
R/W
OTG Q2 Enable Bit. Set bit to 1 to turn on Q2; clear bit to 0 to
turn off Q2.
OTG
0xB0
[5]
ONQ3
R/W
OTG Q3 Enable Bit. Set bit to 1 to turn on Q3; clear bit to 0 to
turn off Q3.
OTG
0xB0
[4]
Q1OK
R
OTG Q1 Status. Value is 0 if Q1 can not start up successfully,
or in current limit status.
OTG
0xB0
[3]
Q2OK
R
OTG Q2 Status. Value is 0 if Q2 can not start up successfully,
or in current limit status.
OTG
0xB0
[2]
VBUSSTAT
R
VBUS Interrupt Status. Value is 1 if an interrupt is generated
by either INVBUSR or INVBUSF.
OTG
0xB0
[1]
DBILIMQ3
R/W
OTG
0xB0
[0]
VBUSDAT
R
OTG
0xB2
[7]
INVBUSR
R/W
VBUS Interrupt control. Set this bit to 1 to generate an
interrupt when connecting a charger to VBUS (rising edge of
VBUS).
OTG
0xB2
[6]
INVBUSF
R/W
VBUS Interrupt control. Set this bit to 1 to generate an
interrupt when disconnecting a charger to VBUS (falling edge
of VBUS).
OTG
0xB2
[5:4]
-
R
OTG
0xB2
[3]
nFLTMSKQ1
R/W
Q1 Interrupt Mask. Set this bit to 1 to generate an interrupt
when the over-current threshold for Q1 is triggered.
OTG
0xB2
[2]
nFLTMSKQ2
R/W
Q2 Interrupt Mask. Set this bit to 1 to generate an interrupt
when the over-current threshold for Q2 is triggered.
OTG
0xB2
[1]
nVBUSMSK
R/W
VBUS Interrupt Mask. Set this bit to 1 unmask to VBUS
connection and/or disconnection interrupt.
OTG
0xB2
[0]
-
R
Reserved.
INT
0xC1
[ 7:0 ]
INTADR
R
Global Interrupt Address. See the Interrupt Service Routine
Section for more information.
Set to 1 to double the current limit of Q3.
VBUS status. Value is 1 if a valid charging source is present at
VBUS. Value is 0 otherwise.
Reserved.
c: Valid only when CHGIN UVLO Threshold<VCHGIN<CHGIN OVP Threshold.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 15 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
SYSTEM CONTROL ELECTRICAL CHARACTERISTICS
(VVSYS = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
Input Voltage Range
MIN
TYP
2.3
MAX
UNIT
5.5
V
UVLO Threshold Voltage
VVSYS Rising
3.45
V
UVLO Hysteresis
VVSYS Falling
200
mV
Supply Current
All Regulators Enabled
420
µA
Shutdown Supply Current
All Regulators Disabled except REG9,
VVSYS =3.6V
30
µA
Oscillator Frequency
2.060
Logic High Input Voltage
2.220
1.4
0.4
nRSTO Delay
Temperature rising
Thermal Shutdown Hysteresis
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 16 -
MHz
V
Logic Low Input Voltage
Thermal Shutdown Temperature
2.380
V
40
ms
160
°C
20
°C
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
STEP-DOWN DC/DC ELECTRICAL CHARACTERISTICS
(VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
CONDITIONS
Operating Voltage Range
MIN
TYP
2.7
UVLO_VP Threshold
Input Voltage Rising
2.5
UVLO_VP Hysteresis
Input Voltage Falling
100
Standby Supply Current
Regulator Enabled, VVSYS = 3.6V
68
Shutdown Current
VVP = 5.5V, Regulator Disabled
0
Output Voltage Accuracy
VOUT ≥ 1.2V, IOUT = 10mA
Line Regulation
VVP = Max (VNOM + 1, 3.2V) to 5.5V
Load Regulation
IOUT = 10mA to IMAX
Power Good Threshold
Power Good Hysteresis
Switching Frequency
Soft-Start Period
-1.5%
2.6
VNOM
c
MAX
UNIT
5.5
V
2.7
V
mV
95
µA
1
µA
1.5%
V
0.15
%/V
0.0017
%/mA
VOUT Rising
93
%VNOM
VOUT Falling
2.5
%VNOM
1
2
VOUT ≥ 20% of VNOM
2.06
2.22
2.38
MHz
VOUT = 0V
520
kHz
VOUT = 3.3V
500
µs
Minimum On-Time
75
90
ns
REG1
Maximum Output Current
1.2
Current Limit
1.70
A
2.00
2.75
A
PMOS On-Resistance
ISW1 = -100mA, VVSYS = 3.6V
0.150
Ω
NMOS On-Resistance
ISW1 = 100mA, VVSYS = 3.6V
0.120
Ω
SW1 Leakage Current
VVP1 = 5.5V, VSW1 = 0 or 5.5V
0
1
µA
REG2
Maximum Output Current
1.2
Current Limit
1.70
A
2.00
ISW2 = -100mA, VVSYS = 3.6V
0.150
NMOS On-Resistance
ISW2 = 100mA, VVSYS = 3.6V
0.120
SW2 Leakage Current
VVP2 = 5.5V, VSW2 = 0 or 5.5V
PMOS On-Resistance
0
2.75
A
Ω
Ω
1
µA
REG3
Maximum Output Current
0.95
Current Limit
1.10
A
1.45
1.85
A
PMOS On-Resistance
ISW3 = -100mA
0.150
Ω
NMOS On-Resistance
ISW3 = 100mA
0.120
Ω
SW3 Leakage Current
VVP3 = 5.5V, VSW3 = 0 or 5.5V
0
1
µA
c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section.
2: IMAX Maximum Output Current.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 17 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
STEP-UP DC/DC ELECTRICAL CHARACTERISTICS
(VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
CONDITIONS
Operating Voltage Range
MIN
TYP
MAX
UNIT
6
V
0.8
1.7
mA
2.7
Operating Supply Current
Standby Supply Current
No switching
80
150
µA
Shutdown Current
VVP = 5.5V, Regulator Disabled
0.1
1
µA
3%
V
Output Voltage Accuracy
VOUT = 5V, IOUT = 10mA
-3%
VNOM
c
Line Regulation
0.019
%/V
Load Regulation
0.17
%/mA
Power Good Threshold
VOUT Rising
93
%VNOM
Power Good Hysteresis
VOUT Falling
7.5
%VNOM
Switching Frequency
1.032
1.110
1.188
MHz
Minimum On-Time
80
ns
Minimum Off-Time
40
ns
Maximum Output Current
VOUT = 5V
0.6
Current Limit
Switch On-Resistance
ISW4 = 100mA
SW4 Leakage Current
VBAT = 3.6V, VSW4 = 5V, REG4 disabled
A
1.35
A
0.48
Ω
10
µA
c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 18 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
LOW-NOISE LDO ELECTRICAL CHARACTERISTICS
(VINL = 3.6V, COUT5 = COUT6 = COUT7 = COUT8 = 2.2µF, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
Operating Voltage Range
MIN
TYP
2.4
c
MAX
UNIT
5.5
V
1.5%
V
Output Voltage Accuracy
VOUT ≥ 1.2V, TA = 25°C, IOUT = 10mA
Line Regulation
VINL = Max (VOUT + 0.5V, 3.6V) to 5.5V,
LOWIQ[ ] = [0]
0.5
mV/V
Load Regulation
IOUT = 1mA to IMAX2
0.08
V/A
Power Supply Rejection Ratio
Supply Current per Output
-1.5%
VNOM
f = 1kHz, IOUT = 20mA, VOUT =1.2V
80
f = 10kHz, IOUT = 20mA, VOUT =1.2V
70
Regulator Enabled
24
Regulator Disabled
0
dB
60
µA
Soft-Start Period
VOUT = 3.0V
100
µs
Power Good Threshold
VOUT Rising
92
%
Power Good Hysteresis
VOUT Falling
4
%
Output Noise
IOUT = 20mA, f = 10Hz to 100kHz, VOUT =
1.2V
30
µVRMS
Discharge Resistance
LDO Disabled, DIS[ ] = 1
1.5
kΩ
IOUT = 160mA, VOUT > 3.1V
130
REG5
Dropout Voltagee
Maximum Output Current
Current Limitf
200
350
VOUT = 95% of regulation voltage
Stable COUT5 Range
385
mA
550
2.2
mV
mA
20
µF
200
mV
REG6
Dropout Voltagee
IOUT = 160mA, VOUT > 3.1V
130
Maximum Output Current
Current Limit
f
VOUT = 95% of regulation voltage
Stable COUT6 Range
385
350
mA
550
mA
2.2
20
µF
300
mV
REG7
Dropout Voltagee
IOUT = 160mA, VOUT > 3.1V
160
Maximum Output Current
Current Limitf
VOUT = 95% of regulation voltage
Stable COUT7 Range
275
250
mA
400
mA
2.2
20
µF
300
mV
REG8
Dropout Voltagee
IOUT = 160mA, VOUT > 3.1V
160
Maximum Output Current
Current Limit
f
250
VOUT = 95% of regulation voltage
Stable COUT8 Range
275
2.2
mA
400
mA
20
µF
c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section.
2: IMAX Maximum Output Current.
3: Dropout Voltage is defined as the differential voltage between input and output when the output voltage drops 100mV below the
regulation voltage (for 3.1V output voltage or higher).
f: LDO current limit is defined as the output current at which the output voltage drops to 95% of the respective regulation voltage.
Under heavy overload conditions the output current limit folds back by 50% (typ)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 19 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
LOW-IQ LDO ELECTRICAL CHARACTERISTICS
(VVSYS = 3.6V, COUT9 = COUT10 = 1µF, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
5.5
V
REG9 (VDDRTC18) — VNOM = 3.3V
Operating Voltage Range
VOUT =1.8V
2.5
Output Voltage Accuracy
IOUT = 1mA
Line Regulation
VVSYS = VOUT + 1.2V to VVSYS = 5.5V
Supply Current from VSYS
-2.5
VNOM
2
VVSYS < VOUT + 0.7V
10
Stable COUT Range
3.5
0.2
VVSYS = VOUT + 1.2V
Maximum Output current
c
%
%/V
µA
5
mA
0.47
µF
REG10 (VDDRTC12) — VNOM = 1.2V
Operating Voltage Range
1.7
Output Voltage Accuracy
IOUT = 1mA
Line Regulation
VIN = VOUT + 0.5V to VIN = 5.5V
-3.5
5.5
VNOM
c
2.5
0.2
Supply Current from VOUT9
Stable COUT Range
%
%/V
2
Maximum Output current
V
µA
5
mA
0.22
µF
OTG SUBSYSTEM ELECTRICAL CHARACTERISTICS
(VINL = 3.6V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
5VIN to VBUS (Q1)
Switch on resistance
5VIN = 5V, ILOAD = 100mA
Current Limit Threshold
500
Current Limit Delay
0.23
Ω
700
mA
256
ms
0.34
Ω
700
mA
256
ms
CHGIN to VBUS (Q2)
Switch on resistance
CHGIN = 5V, ILOAD = 100mA
Current Limit Threshold
500
Current Limit Delay
c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 20 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
ActivePathTM CHARGER ELECTRICAL CHARACTERISTICS
(VCHGIN = 5.0V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
6.0
V
3.9
V
ActivePath
CHGIN Operating Voltage Range
4.35
CHGIN UVLO Threshold
CHGIN Voltage Rising
CHGIN UVLO Hysteresis
CHGIN Voltage Falling
CHGIN OVP Threshold
CHGIN Voltage Rising
CHGIN OVP Hysteresis
CHGIN Voltage Falling
VBUS_UVLO Threshold
VBUS Voltage Rising
VBUS_UVLO Hysteresis
VBUS Voltage Falling
400
VCHGIN < VUVLO
35
70
µA
VCHGIN < VBAT + 50mV, VCHGIN > VUVLO
100
200
µA
VCHGIN > VBAT + 150mV, VCHGIN > VUVLO
Charger disabled, IVSYS = 0mA
1.2
2.0
mA
IVSYS = 100mA
0.25
Ω
2.25
A
CHGIN Supply Current
CHGIN to VSYS On-Resistance
3.1
0.5
6.0
6.6
V
7.2
0.4
3.3
CHGIN to VSYS Current Limit
1.5
CHGLEV = GA, VVSYS =3.6V
VBUS Input Current Limit
3.5
CHGLEV = VVSYS, DBILIMQ3[ ] = 0, VVSYS
=3.6V
400
CHGLEV = VVSYS, DBILIMQ3[ ] = 1.
4.0
V
V
4.8
V
mV
75
110
450
500
mA
900
VSYS REGULATION
CHGIN to VSYS Regulated Voltage
IVSYS = 10mA
4.45
4.6
4.8
V
4
8
12
mA
1
µA
nSTAT OUTPUT
nSTAT Sink current
VnSTAT = 2V
nSTAT Leakage Current
VnSTAT = 4.2V
CHGLEV INPUTS
CHGLEV Logic High Input Voltage
1.4
V
CHGLEV Logic Low Input Voltage
CHGLEV Leakage Current
VCHGLEV = 4.2V
0.4
V
1
µA
TH INPUT
TH Pull-Up Current
VCHGIN > VBAT + 100mV, Hysteresis = 50mV
91
100
109
µA
VTH Upper Temperature Voltage
Threshold (VTHH)
Hot Detect NTC Thermistor
2.45
2.50
2.54
V
VTH Lower Temperature Voltage
Threshold (VTHL)
Cold Detect NTC Thermistor
0.482
0.50
0.518
V
VTH Hysteresis
Upper and Lower Thresholds
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 21 -
40
mV
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
ActivePathTM CHARGER ELECTRICAL CHARACTERISTICS CONT’D
(VCHGIN = 5.0V, TA = 25°C, unless otherwise specified.)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
CHARGER
BAT Reverse Leakage Current
VCHGIN = 0V, VBAT = 4.2V, IVSYS = 0mA, All REGs
are OFF.
BAT to VSYS On-Resistance
ISET Pin Voltage
Charge Termination Voltage
mΩ
Precondition
0.13
V
TA = -20°C to 70°C
4.179
4.200
4.221
TA = -40°C to 85°C
4.170
4.200
4.230
-10%
ICHG1
+10%
VBAT = 3.8V
VBAT = 2.7V
USB-Mode, CHGLEV = VVSYS,
DBILIMQ3[ ] = 0.
Min
(450mA,
ICHG )
USB-Mode, CHGLEV = VVSYS,
DBILIMQ3[ ] = 1.
Min
(900mA,
ICHG )
AC-Mode
10% ICHG
10% ICHG
USB-Mode, CHGLEV = VVSYS,
DBILIMQ3[ ] = 1.
10% ICHG
VBAT Voltage Rising
Precondition Threshold
Hysteresis
VBAT Voltage Falling
VBAT = 4.15V
mA
Min (75mA,
10% × ICHG )
USB-Mode, CHGLEV = VVSYS,
DBILIMQ3[ ] = 0.
Precondition Threshold Voltage
V
Min (75mA,
ICHG )
USB-Mode, CHGLEV = GA
END-OF-CHARGE Current
Threshold
70
1.2
USB-Mode, CHGLEV = GA
Precondition Charge Current
µA
Fast Charge
AC-Mode
Charge Current
15
2.7
2.9
mA
3.1
150
AC-Mode, CHGLEV = VVSYS
10% ICHG
AC-Mode, CHGLEV = GA
10% ICHG
USB-Mode, CHGLEV = VVSYS
45
USB-Mode, CHGLEV = GA
45
V
mV
mA
Charge Restart Threshold
VVSYS - VBAT, VBAT Falling
Precondition Safety Timer
PRETIMO[ ] = 10
80
min
Total Safety Timer
TOTTIMO[ ] = 10
6.5
hr
100
°C
170
Thermal Regulation Threshold
200
230
mV
c: RISET (kΩ) = 2336 × (1V/ICHG (mA)) - 0.205
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 22 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS
(VVSYS = 3.6V, TA = 25°C, unless otherwise specified.)
Frequency vs. Temperature
VREF vs. Temperature
VREF (%)
0.80
0.40
0
-1
Frequency (%)
1.20
0
ACT8600-002
ACT8600-001
1.60
-2
-3
-4
-5
-0.40
-0.80
-40
VBAT = 3.7V
-6
-20
0
20
40
60
-40
80
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
PWREN Sequence
VBAT Connect
ACT8600-004
ACT8600-003
CH1
CH1
CH2
CH3
CH2
CH4
CH3
CH5
CH1: VBAT, 2V/div
CH2: VOUT9, 2V/div
CH3: VOUT10, 1V/div
TIME: 400µs/div
CH1: VPWREN, 2V/div
CH2: VOUT3, 1V/div
CH3: VOUT2, 2V/div
CH4: VOUT1, 1V/div
CH5: VOUT5, 2V/div
TIME: 400µs/div
nRSTO Startup Sequence
ACT8600-005
CH1
CH2
CH3
CH4
CH1: VPWREN, 2V/div
CH2: VOUT3, 1V/div
CH3: VOUT1, 1V/div
CH4: VnRSTO, 2V/div
TIME: 20ms/div
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 23 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
Q1 Dropout Voltage vs. IVBUS
Q2 Dropout Voltage vs. IVBUS
100
80
60
40
20
Q2 Dropout Voltage (mV)
Q1 Dropout Voltage (mV)
120
180
160
140
120
100
80
60
40
20
0
0
50
100
150
ACT8600-007
ACT8600-006
140
0
0
200 250 300 350 400 450 500
50
100
150
IVBUS (mA)
IVBUS (mA)
Q1 Quiescent Current vs. 5VIN Voltage
Q2 Quiescent Current vs. CHGIN Voltage
64
62
60
58
56
80
Quiescent Current (µA)
66
90
ACT8600-009
ACT8600-008
68
Q1 Quiescent Current (µA)
200 250 300 350 400 450 500
70
60
50
40
30
20
10
54
0
4
4.3
4.6
4.9
5.2
5
5.5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
CHGIN Voltage (V)
5VIN Voltage (V)
Q1 Shutdown Current vs. 5VIN Voltage
ACT8600-010
Shutdown Current (µA)
8
7
6
5
4
3
2
4
4.3
4.6
4.9
5.2
5.5
5VIN Voltage (V)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 24 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
VBUS Voltage vs. IVBUS
(CHGIN Supply)
VBUS Voltage vs. IVBUS Current
(Supplied from 5VIN)
VBUS Voltage (V)
5.1
5.0
4.9
4.8
4.7
4.6
5.3
5.2
VBUS Voltage (V)
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
4.4
ACT8600-012
ACT8600-011
5.3
4.5
0
100
200
300
400
500
600
0
700
100
200
REG1 Efficiency vs. Output Current
Efficiency (%)
VIN = 5.0V
VIN = 4.2V
VIN = 5.0V
VIN = 4.2V
60
40
20
0
0
1
10
100
1000
10000
1
10
Output Current (mA)
VIN = 4.2V
40
20
100
VOUT = 5V
VIN = 4.2V
80
Efficiency (%)
VIN = 5.0V
60
10000
ACT8600-016
VIN = 3.6V
80
1000
REG4 Efficiency vs. Output Current
ACT8600-015
VOUT = 1.8V
100
Output Current (mA)
REG3 Efficiency vs. Output Current
100
Efficiency (%)
700
VIN = 3.6V
VOUT = 3.3V
80
Efficiency (%)
VIN = 3.6V
100
20
0
600
ACT8600-014
ACT8600-013
VOUT = 1.4V
40
500
REG2 Efficiency vs. Output Current
100
60
400
IVBUS Current (mA)
IVBUS Current (mA)
80
300
VIN = 3.0V
VIN = 3.6V
60
40
20
1
10
100
0
1000
Output Current (mA)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
1
10
100
1000
Output Current (mA)
- 25 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
REG2 Output Voltage vs. Temperature
REG1 Output Voltage vs. Temperature
Output Voltage (V)
1.230
1.210
1.190
1.170
3.400
Output Voltage (V)
VOUT1 = 1.2V
IOUT = 100mA
ACT8600-018
ACT8600-017
1.250
VOUT2 = 3.3V
ILOAD = 100mA
3.350
3.300
3.250
3.200
1.150
-40
-20
0
20
40
60
80
100
-40
120
-20
0
200
RDSON (mΩ)
Output Voltage (V)
1.800
1.750
100
120
PMOS
100
NMOS
50
0
-40
-20
0
20
40
60
80
100
120
3.3
3.55
3.8
Temperature (°C)
150
NMOS
50
4.3
4.8
4.8
5.05
5.3
5.55
5.3
5.8
800
700
REG4 Resistance (mΩ)
PMOS
3.8
4.55
600
500
400
300
200
100
3.4
Input Voltage (V)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
ACT8600-022
ACT8600-021
200
3.3
4.3
REG4 Resistance vs. Battery Voltage
ILOAD = 100mA
100
4.05
Input Voltage (V)
REG3 MOSFET Resistance
Resistance (mΩ)
80
ILOAD = 100mA
150
1.700
0
60
ACT8600-020
ACT8600-019
VOUT3 = 1.8V
ILOAD = 100mA
1.850
250
40
REG1, 2 MOSFET Resistance
REG3 Output Voltage vs. Temperature
1.900
20
Temperature (°C)
Temperature (°C)
3.6
3.8
4.0
4.2
4.4
Battery Voltage (V)
- 26 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
REG5 Output Voltage vs. Output Current
REG6 Output Voltage vs. Output Current
Output Voltage (V)
2.560
2.540
2.520
2.500
2.480
2.460
2.440
3.380
3.360
Output Voltage (V)
2.580
3.400
2.420
2.400
ACT8600-024
ACT8600-023
2.600
3.340
3.320
3.300
3.280
3.260
3.240
3.220
0
50
100
150
200
250
300
3.200
350
50
0
100
Output Current (mA)
REG7 Output Voltage vs. Output Current
1.900
1.300
1.240
300
350
1.220
1.200
1.180
1.160
1.140
REG8 Output Voltage vs. Output Current
1.860
1.840
1.820
1.800
1.780
1.760
1.740
1.720
1.120
0
50
100
150
200
1.700
250
0
50
100
150
200
250
Output Current (mA)
Output Current (mA)
REG5/6 Dropout Voltage vs. Output Current
300
250
200
150
100
50
300
Dropout Voltage (mV)
350
REG7/8 Dropout Voltage vs. Output Current
ACT8600-028
ACT8600-027
400
Dropout Voltage (mV)
250
1.880
Output Voltage (V)
Output Voltage (V)
1.260
0
200
ACT8600-026
ACT8600-025
1.280
1.100
150
Output Current (mA)
250
200
150
100
50
0
0
50
100
150
200
250
300
350
0
Output Current (mA)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
50
100
150
200
250
Output Current (mA)
- 27 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
REG5 Output Voltage vs. Temperature
2.550
2.500
2.450
2.400
-40
3.400
Output Voltage (V)
VOUT = 2.5V
ACT8600-030
Output Voltage (V)
REG6 Output Voltage vs. Temperature
ACT8600-029
2.600
VOUT = 3.3V
3.350
3.300
3.250
3.200
-20
0
20
40
60
80
100
120
-40
-20
0
Temperature (°C)
REG7 Output Voltage vs. Temperature
80
100
120
1.200
1.150
VOUT = 1.8V
Output Voltage (V)
1.250
1.900
ACT8600-032
ACT8600-031
Output Voltage (V)
60
REG8 Output Voltage vs. Temperature
VOUT = 1.2V
1.100
1.850
1.800
1.750
1.700
-40
-20
0
20
40
60
80
100
120
-40
-20
0
Temperature (°C)
40
60
80
100
120
REG10 Output Voltage vs. Temperature
3.300
3.250
VOUT = 1.2V
Output Voltage (V)
3.350
1.300
ACT8600-034
ACT8600-033
VOUT = 3.3V
3.200
-40
20
Temperature (°C)
REG9 Output Voltage vs. Temperature
Output Voltage (V)
40
Temperature (°C)
1.300
3.400
20
1.250
1.200
1.150
1.100
-20
0
20
40
60
80
100
120
-40
Temperature (°C)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
-20
0
20
40
60
80
100
120
Temperature (°C)
- 28 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
REG10 Output Voltage vs. Output Current
ACT8600-035
Output Voltage (V)
1.215
1.205
1.195
1.185
1.175
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Output Current (mA)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 29 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
VSYS Voltage vs. VSYS Current (USB Mode)
4.6
CHGLEV/DBQ3ILIM[ ] = 1
4.5
4.4
CHGLEV = 0
CHGLEV/DBQ3ILIM = 0
4.3
5.0
VSYS Voltage (V)
VSYS Voltage (V)
4.7
VSYS Voltage vs. CHGIN Voltage
5.2
ACT8600-037
ACT8600-036
4.8
4.8
VVSYS = 4.6V
4.6
4.4
4.2
4.2
4.0
4.1
200
0
400
600
800
2
0
1000
Charge Current vs. Battery Voltage
8
10
Charge Current vs. Battery Voltage
800
600
400
200
450
CHGLEV = 1
RISET = 2.4k
DBILIMQ3[ ] = 0
USB Mode
400
Charge Current (mA)
VCHGIN = 5V
RISET = 2.4k
AC Mode
ACT8600-039
ACT8600-038
Charge Current (mA)
6
CHGIN Voltage (V)
ISYS Current (mA)
1000
4
350
300
250
200
150
100
50
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.5
1.0
3.0
3.5
4.0
4.5
50
40
30
CHGLEV = 0
RISET = 1.8k
USB Mode
CHGLEV = 1
900 DBILIMQ3[ ] = 1
RISET = 2.4k
Charge Current (mA)
60
1000
ACT8600-041
ACT8600-040
70
Charge Current (mA)
2.5
Charge Current vs. Battery Voltage
Charge Current vs. Battery Voltage
80
10
2.0
Battery Voltage (V)
Battery Voltage (V)
20
1.5
800 USB Mode
700
600
500
400
300
200
100
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
Battery Voltage (V)
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Battery Voltage (V)
- 30 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
DCCC and Battery Supplement Modes
ACT8600-042
CH1
CH2
CH3
CH4
CH5
VBAT = 3.6V
IVSYS = 1.5A
VCHGIN = 5V-1A
CH6
CH1: VVSYS, 2V/div
CH2: VCHGIN, 5V/div
CH3: VBAT, 2V/div
CH4: ICHGIN, 500mA/div
CH5: IBAT, 1A/div
CH6: IVSYS, 1A/div
TIME: 40ms/div
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 31 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
CHGIN Applied
CHGIN Removed
ACT8600-044
ACT8600-043
CH1
CH1
CH2
CH2
CH3
CH3
CH4
CH4
VBAT = 3.6V
IVSYS = 200mA
VBAT = 3.6V
IVSYS = 0mA
CH1: VCHGIN, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 1V/div
CH4: IBAT, 500mA/div
TIME: 20ms/div
CH1: VCHGIN, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 1V/div
CH4: IBAT, 500mA/div
TIME: 20ms/div
VBUS Applied
VBUS Removed
ACT8600-046
ACT8600-045
CH1
CH1
CH2
CH2
CH3
CH3
CH4
VBAT = 3.6V
IVSYS = 200mA
450mA USB
VBAT = 3.6V
IVSYS = 200mA
450mA USB
CH4
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 1V/div
CH4: IBAT, 500mA/div
TIME: 20ms/div
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 1V/div
CH4: IBAT, 200mA/div
TIME: 20ms/div
VBUS Applied
VBUS Removed
ACT8600-048
ACT8600-047
CH1
CH1
CH2
CH2
CH3
CH3
CH4
VBAT = 3.6V
IVSYS = 40mA
75mA USB
VBAT = 3.6V
IVSYS = 40mA
75mA USB
CH4
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 2V/div
CH4: IBAT, 50mA/div
TIME: 20ms/div
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 2V/div
CH4: IBAT, 50mA/div
TIME: 20ms/div
- 32 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TYPICAL PERFORMANCE CHARACTERISTICS CONT’D
(TA = 25°C, unless otherwise specified.)
VBUS Applied
VBUS Removed
ACT8600-050
ACT8600-049
CH1
CH1
CH2
CH2
CH3
CH3
CH4
VBAT = 3.6V
IVSYS = 200mA
DBILIMQ3[ ]= 1
CHGLEV = 1
CH4
VBAT = 3.6V
IVSYS = 200mA
DBILIMQ3[ ] = 1
CHGLEV = 1
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 2V/div
CH4: IBAT, 500mA/div
TIME: 20ms/div
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
CH1: VVBUS, 5V/div
CH2: VVSYS, 2V/div
CH3: VBAT, 2V/div
CH4: IBAT, 500mA/div
TIME: 20ms/div
- 33 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
SYSTEM CONTROL INFORMATION
Interfacing with the Ingenic JZ4770 Processor
The ACT8600 is optimized for use in applications
using the Ingenic JZ4770 processor, supporting
both the power domains as well as the signal
interface for these processors.
The following paragraphs describe how to design
ACT8600 with JZ4770 processor.
While the ACT8600 supports many possible
configurations for powering these processors, one
of the most common configurations is detailed in
this datasheet.
Control Signals
Master Enable (PWREN) Input
PWREN is a logic input which turns ON REG1,
REG2, REG3, and REG5 when asserted. All
regulators except the RTC LDOs (REG9) will be
turned OFF when PWREN is de-asserted.
nRSTO Output
The power on reset pin, nRSTO is an open-drain
output. Connect a 10kΩ or greater pull-up resistor
from nRSTO to REG9.
- The nRSTO output pin is asserted low only when
the REG9 voltage is below 1.67V
- If REG1 is above its power-OK threshold when
the reset timer (40ms) expires, nRSTO is deasserted.
nIRQ Output
nIRQ is an open-drain output that asserts low any
time an interrupt is generated. Connect a 10kΩ or
greater pull-up resistor from nIRQ to the I/O rail.
nIRQ is typically used to drive the interrupt input of
the system processor.
Many of the ACT8600's functions support interruptgeneration as a result of various conditions. These
are typically masked by default, but may be
unmasked via the I2C interface. For more
information about the available fault conditions,
refer to the appropriate sections of this datasheet.
Power Control Sequences
When the VVSYS rises above the UVLO, or REG9
rises above 93% of its default value (in the case
when a charged backup battery is installed),
nRSTO is asserted low immediately and REG9 is
enabled. REG1, REG2 and REG3 will be enabled
when PWREN = 1 and VVSYS is above 3.45V. When
REG1 reaches 93% of the default value, REG5 will
be enabled, and nRSTO is de-asserted after a
40ms delay.
Once the system is turned ON, the processor may
shut down the system by pulling down PWREN. In
that case, all of the regulators, except REG9 will be
turned off (REG9 is the always ON LDO). When
PWREN is pulled high again, OUT1/2/3/5 will be
turned ON again but nRSTO remains de-asserted
as long as REG9 is within regulation.
Table 1:
ACT8600 and Ingenic JZ4770 Power Domains
POWER DOMAIN ACT8600 CHANNEL
TYPE
DEFAULT VOLTAGE CURRENT CAPABILITY
CPU Core
REG1
Step-Down DC/DC
1.2V
1200mA
IO / AVDAUD
REG2
Step-Down DC/DC
3.3V
1200mA
MEM
REG3
Step-Down DC/DC
1.8V
950mA
USB OTG
REG4
Step-Up DC/DC
5V
600mA
AVD
REG5
LDO
2.5V
350mA
General Purpose
REG6
LDO
1.8V
350mA
General Purpose
REG7
LDO
1.8V
250mA
General Purpose
REG8
LDO
1.8V
250mA
VDDRTC
REG9
LDO
3.3V
5mA
VDDRTC12
REG10
LDO
1.2V
5mA
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 34 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Figure 2:
ACT8600 Power Sequence
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 35 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
FUNCTIONAL DESCRIPTION
I2C Interface
Table 2:
2
The ACT8600 features an I C interface that allows
advanced programming capability to enhance overall
system performance. To ensure compatibility with a
wide range of system processors, the I2C interface
supports clock speeds of up to 400kHz (“Fast-Mode”
operation) and uses standard I2C commands. I2C
write-byte commands are used to program the
ACT8600, and I2C read-byte commands are used to
read the ACT8600’s internal registers. The ACT8600
always operates as a slave device, and is addressed
using a 7-bit slave address followed by an eighth bit,
which indicates whether the transaction is a readoperation or a write-operation, [1011010x].
SDA is a bi-directional data line and SCL is a clock
input. The master device initiates a transaction by
issuing a START condition, defined by SDA
transitioning from high to low while SCL is high. Data
is transferred in 8-bit packets, beginning with the
MSB, and is clocked-in on the rising edge of SCL.
Each packet of data is followed by an “Acknowledge”
(ACK) bit, used to confirm that the data was
transmitted successfully.
For more information regarding the I2C 2-wire serial
interface, go to the NXP website: http://www.nxp.com.
Interrupt Service Routine
The ACT8600 has number of interrupt trigger sources
to simplify the customer interrupt service routine, the
ACT8600 features a Interrupt Service Routine
function as follow: Once the nIRQ asserts low, the
CPU can read the 0xC1 byte to determine the source
that asserts the interrupt. The CPU then reads the
interrupt –related bit(s) within the source located at
generated the interrupt then serve it. If there are
multiple interrupts and pending, the cycle repeats until
all the interrupts are served. The Global Interrupt
Address is shown as Table 2.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Global Interrupt Address
0xC1 Value
Interrupt
Source
Interrupt
Address
0x00
SYSTEM
0x00
0x10
REG1
0x12
0x20
REG2
0x22
0x30
REG3
0x32
0x50
REG5
0x51
0x60
REG6
0x61
0x70
REG7
0x71
0x80
REG8
0x81
0xA0
APCH
0xA8, 0xA9
0xB0
OTG
0xB0, 0xB2
Housekeeping Functions
Programmable System Voltage Monitor
The ACT8600 features a programmable systemvoltage monitor, which monitors the voltage at VSYS
and compares it to a programmable threshold
voltage. The VSYSMON comparator is designed to
be immune to VSYS noise resulting from switching,
load transients, etc. The VSYSMON comparator is
disable by default; to enable it, set the SYSLEV[3:0]
register to one of the value in Table 3. Note that
there is a 200mV hysteresis between the rising and
falling threshold for the comparator. The
VSYSDAT [-] bit reflects the output of the VSYSMON
comparator. The value of VSYSDAT[ ] is 1 when
VVSYS < SYSLEV; value is 0 otherwise.
The VSYSMON comparator can generate an
interrupt when VVSYS is lower than SYSLEV[ ]
voltage. The interrupt is masked by default by can be
unmasked by setting nSYSLEVMSK[ ] = 1.
- 36 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
FUNCTIONAL DESCRIPTION CONT’D
Table 3:
SYSLEV Falling Threshold
SYSLEV[3:0]
SYSLEV Falling Threshold
1000
1001
1010
1011
1100
1101
1110
1111
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Thermal Protection
The ACT8600 integrates thermal shutdown
protection circuitry to prevent damage resulting
from excessive thermal stress, as may be
encountered under fault conditions.
Thermal Interrupt
If the thermal interrupt is unmasked (by setting
nTMSK[ ] to 1), ACT8600 can generate an interrupt
when the die temperature reaches 120°C (typ).
Thermal Protection
If the ACT8600 die temperature exceeds 160°C, the
thermal protection circuitry disables all regulators
and prevents the regulators from being enabled until
the IC temperature drops by 20°C (typ).
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 37 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
STEP-DOWN DC/DC REGULATORS
General Description
REG1, REG2 and REG3 are fixed-frequency,
current-mode, synchronous PWM step-down
converters that achieves peak efficiencies of up to
97%. These regulators operate with a fixed frequency
of 2.22MHz, minimizing noise in sensitive
applications and allowing the use of small external
components. Additionally, REG1, REG2 and REG3
are available with a variety of standard and custom
output voltages, and may be software-controlled via
the I2C interface for systems that require advanced
power management functions.
Output Current Capability
REG1, REG2, and REG3 are capable of supplying
1200mA, 1200mA and 950mA output current,
respectively.
100% Duty Cycle Operation
REG1, REG2 and REG3 are capable of operating at
up to 100% duty cycle. During 100% duty cycle
operation, the high-side power MOSFETs are held on
continuously, providing a direct connection from the
input to the output (through the inductor), ensuring
the lowest possible dropout voltage in battery
powered applications.
Operating Mode
By default, REG1, REG2, and REG3 operate in
fixed-frequency PWM mode at medium to heavy
loads, then transition to a proprietary power-saving
mode at light loads in order to save power.
and optimize transient performance over their full
operating range. No compensation design is
required; simply follow a few simple guide lines
described below when choosing external
components.
Input Capacitor Selection
The input capacitor reduces peak currents and noise
induced upon the voltage source. A 4.7μF ceramic
capacitor is recommended for each regulator in most
applications.
Output Capacitor Selection
REG1, REG2 and REG3 were designed to take
advantage of the benefits of ceramic capacitors,
namely small size and very-low ESR. REG1, REG2
and REG3 are designed to operate with 22uF output
capacitor over most of their output voltage ranges,
although more capacitance may be desired
depending on the duty cycle and load step
requirements.
Inductor Selection
REG1, REG2, and REG3 utilize current-mode control
and a proprietary internal compensation scheme to
simultaneously simplify external component selection
and optimize transient performance over their full
operating range. These devices were optimized for
operation with 3.3μH inductors, although inductors in
the 2.2μH to 4.7μH range can be used.
Configuration Options
Output Voltage Programming
Synchronous Rectification
REG1, REG2, and REG3 each feature integrated
synchronous rectifiers, maximizing efficiency and
minimizing the total solution size and cost by
eliminating the need for external rectifiers.
Soft-Start
REG1, REG2 and REG3 include internal 500 us softstart ramps which limit the rate of change of the
output voltage, minimizing input inrush current and
ensuring that the output powers up in a monotonic
manner that is independent of loading on the outputs.
This circuitry is effective any time the regulator is
enabled, as well as after responding to a short-circuit
or other fault condition.
By default, REG1, REG2 and REG3 power up and
regulate to their default output voltages. Once the
system is enabled, the output voltages may be
modified through either the I2C interface by writing to
the VSET[ ] register. Using I2C, the output voltage
may be programmed to any voltage as shown in
Table 4.
Interrupts
REG1, REG2 and REG3 may optionally interrupt the
processor if their output voltages fall out regulation.
Enable interrupts by setting a regulator’s nFLTMSK[ ]
bit.
Compensation
REG1, REG2 and REG3 utilize current-mode control
and a proprietary internal compensation scheme to
simultaneously simplify external component selection
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 38 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
CONFIGURABLE STEP-UP DC/DC
General Description
Configuration Options
The step-up DC/DC is a highly efficient step-up
DC/DC converter that employs a fixed frequency,
current-mode, PWM architecture. This regulator is
optimized for 5V applications as well as white-LED
bias applications consisting of up to ten whiteLEDs.
5V Applications
The boost converter is configured by default to
provide a fixed 5V output voltage, without requiring
external feedback resistors. Contact the factory for
other voltage options.
In order to provide improved operation under very
low duty-cycle conditions, such as when operating
from a fully-charged Li+ cell to 5V, the boost
converter may optionally be configured to operate
at half of the frequency of the buck regulators.
Compensation and Stability
The boost regulator utilizes current-mode control
and an internal compensation network to optimize
transient performance, ease compensation, and
improve stability over a wide range of operating
conditions.
Output Voltage Programming
By default, the boost regulator powers up and
regulates to its default output voltages. Once the
system is enabled, the output voltages may be
modified through either the I2C interface by writing to
the VSET[ ] register. Using I2C, the output voltage
may be programmed to any voltage as shown in
Table 6.
Enabling the Boost Regulator
The boost regulator feature independent
enable/disable control via the I2C serial interface.
Independently enable or disable the boost by
writing to the ON[ ] bit for REG4.
Power-OK
The boost regulator features a power-OK status bit
(OK[ ]) that can be read by the system
microprocessor via the I2C interface. If an output
voltage is lower than the power-OK threshold,
typically 6% below the programmed regulation
voltage, this bit clears to 0.
Inductor Selection
REG4 is optimized for operation with inductors in
the 4.7uH to 10uH range, although larger inductor
values of up to 22uH can be used to achieve the
highest possible efficiency.
Input and Output Capacitor Selection
For 5V operation, a 10uF ceramic capacitor should
be connected to the input and output of OUT4
respectively. A larger output capacitor may be used
to minimize output voltage ripple if needed.
Rectifier Selection
The boost regulator requires a Schottky diode to
rectify the inductor current. Select a low forward
voltage drop Schottky diode with a forward current
rating that is sufficient to support the maximum
switch current of 900mA (typ) and a sufficient peak
repetitive reverse voltage (VRRM) to support the
output voltage.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 39 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
LOW-DROPOUT LINEAR REGULATORS
General Description
Output Capacitor Selection
The REG5, REG6, REG7 and REG8 are low-noise,
low-dropout linear regulators (LDOs) that are
optimized for low noise and high-PSRR operation.
The REG5, REG6, REG7 and REG8 require just a
small 2.2uF ceramic capacitor for stability. For best
performance, each output capacitor should be
connected directly between each output and
ground, with a short and direct connection. High
quality ceramic capacitors such as X7R and X5R
dielectric types are strongly recommended.
LDO Output Voltage Programming
The REG5, REG6, REG7 and REG8 feature
independently-programmable output voltages that
are set via the I2C serial interface, increasing
flexibility while reducing total solution and size and
cost. Set the output voltage by writing to the LDO’s
VSET[ ] register. Each LDO’s VSET[ ] register
provides the following output voltage options as
shown in Table 5.
In order to ensure safe operation under over-load
conditions, each LDO features current-limit circuitry
with current fold-back. The current-limit the current
that can be drawn from the output, providing
protection in overload conditions. For additional
protection under extreme over current conditions,
current-fold-back protection reduces the currentlimit by approximately 50% under extreme overload
conditions.
Backup Battery Charger
REG9 is always-on and REG10 is low-dropout
linear regulators (LDO). They both feature lowquiescent supply current, and current-limit
protection, and are ideally suited for always-on
power supply applications, such as for a real-time
clock, or as a backup-battery or super-cap charger.
All LDOs feature independent enable/disable
control via the I2C serial interface. Independently
enable or disable each output by writing to the
appropriate ON[ ] bit.
REG9 features internal circuitry that limits the
reverse supply current to less than 1uA when the
input voltage falls below the output voltage, as can
be encountered in backup-battery charging
applications. REG9 internal circuitry monitors the
input and the output, and disconnects internal
circuitry and parasitic diodes when the input voltage
falls below the output voltage, greatly minimizing
backup battery discharge. The always-ON LDOs
also feature a constant current-limit, which protects
the IC under output short-circuit conditions as well
as provides a constant charge current. When
operating as a backup battery charger.
Power-OK
Figure 3:
The REG5, REG6, REG7 and REG8 feature a
power-OK status bit (OK[ ]) that can be read by the
system microprocessor via the I2C interface. If an
output voltage is lower than the power-OK
threshold, typically 11% below the programmed
regulation voltage, this bit clears to 0.
Always ON LDO
Enabling and Disabling the LDOs
Interrupts
Each LDO may optionally interrupt the processor if
its output voltage falls out of regulation. Enable
interrupts by setting a regulator’s nFLTMSK[ ] bit.
Optional LDO Output Discharge
The REG5, REG6, REG7 and REG8 feature
optional output voltage discharge. When this
feature is enabled, the LDO output is discharged to
ground through a 1.5kΩ resistance when the LDO is
shutdown. This feature may be enabled or disabled
via the I2C interface by writing to an LDO’s DIS[ ]
bit.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 40 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Table 4:
VSET[ ] Output Voltage Setting of DC/DC Step-Down Regulators (REG1—REG3)
REGx/VSET[2:0]
REGx/VSET[5:3]
000
001
010
011
100
101
110
111
000
0.600
0.800
1.000
1.200
1.600
2.000
2.400
3.200
001
0.625
0.825
1.025
1.250
1.650
2.050
2.500
3.300
010
0.650
0.850
1.050
1.300
1.700
2.100
2.600
3.400
011
0.675
0.875
1.075
1.350
1.750
2.150
2.700
3.500
100
0.700
0.900
1.100
1.400
1.800
2.200
2.800
3.600
101
0.725
0.925
1.125
1.450
1.850
2.250
2.900
3.700
110
0.750
0.950
1.150
1.500
1.900
2.300
3.000
3.800
111
0.775
0.975
1.175
1.550
1.950
2.350
3.100
3.900
Table 5:
VSET[ ] Output Voltage Setting of Low-Noise LDO Regulators (REG5—REG8)
REGx/VSET[2:0]
REGx/VSET[5:3]
000
001
010
011
100
101
110
111
000
0.600
0.800
1.000
1.200
1.600
2.000
2.400
3.200
001
0.625
0.825
1.025
1.250
1.650
2.050
2.500
3.300
010
0.650
0.850
1.050
1.300
1.700
2.100
2.600
3.400
011
0.675
0.875
1.075
1.350
1.750
2.150
2.700
3.500
100
0.700
0.900
1.100
1.400
1.800
2.200
2.800
3.600
101
0.725
0.925
1.125
1.450
1.850
2.250
2.900
3.700
110
0.750
0.950
1.150
1.500
1.900
2.300
3.000
3.800
111
0.775
0.975
1.175
1.550
1.950
2.350
3.100
3.900
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ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 41 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Table 6:
VSET[ ] Output Voltage Setting of DC/DC Step-Up Regulator
REGx/VSET[4:0]
REGx/VSET[7:5]
000
001
010
011
100
101
110
111
00000
3.000
3.000
3.000
6.200
9.400
12.600
19.000
31.800
00001
3.000
3.000
3.100
6.300
9.500
12.800
19.400
32.200
00010
3.000
3.000
3.200
6.400
9.600
13.000
19.800
32.600
00011
3.000
3.000
3.300
6.500
9.700
13.200
20.200
33.000
00100
3.000
3.000
3.400
6.600
9.800
13.400
20.600
33.400
00101
3.000
3.000
3.500
6.700
9.900
13.600
21.000
33.800
00110
3.000
3.000
3.600
6.800
10.000
13.800
21.400
34.200
00111
3.000
3.000
3.700
6.900
10.100
14.000
21.800
34.600
01000
3.000
3.000
3.800
7.000
10.200
14.200
22.200
35.000
01001
3.000
3.000
3.900
7.100
10.300
14.400
22.600
35.400
01010
3.000
3.000
4.000
7.200
10.400
14.600
23.000
35.800
01011
3.000
3.000
4.100
7.300
10.500
14.800
23.400
36.200
01100
3.000
3.000
4.200
7.400
10.600
15.000
23.800
36.600
01101
3.000
3.000
4.300
7.500
10.700
15.200
24.200
37.000
01110
3.000
3.000
4.400
7.600
10.800
15.400
24.600
37.400
01111
3.000
3.000
4.500
7.700
10.900
15.600
25.000
37.800
10000
3.000
3.000
4.600
7.800
11.000
15.800
25.400
38.200
10001
3.000
3.000
4.700
7.900
11.100
16.000
25.800
38.600
10010
3.000
3.000
4.800
8.000
11.200
16.200
26.200
39.000
10011
3.000
3.000
4.900
8.100
11.300
16.400
26.600
39.400
10100
3.000
3.000
5.000
8.200
11.400
16.600
27.000
39.800
10101
3.000
3.000
5.100
8.300
11.500
16.800
27.400
40.200
10110
3.000
3.000
5.200
8.400
11.600
17.000
27.800
40.600
10111
3.000
3.000
5.300
8.500
11.700
17.200
28.200
41.000
11000
3.000
3.000
5.400
8.600
11.800
17.400
28.600
41.400
11001
3.000
3.000
5.500
8.700
11.900
17.600
29.000
41.400
11010
3.000
3.000
5.600
8.800
12.000
17.800
29.400
41.400
11011
3.000
3.000
5.700
8.900
12.100
18.000
29.800
41.400
11100
3.000
3.000
5.800
9.000
12.200
18.200
30.200
41.400
11101
3.000
3.000
5.900
9.100
12.300
18.400
30.600
41.400
11110
3.000
3.000
6.000
9.200
12.400
18.600
31.000
41.400
11111
3.000
3.000
6.100
9.300
12.500
18.800
31.400
41.400
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
USB OTG
General Description
Figure 4:
When the system is acting as a USB OTG Adevice, the OTG subsystem can provide power to
VBUS from either 5VIN via Q1 or CHGIN via Q2 as
shown in the figure. If VBUS is connected to a
charger (either a charging port, a USB host or Hub,
or a PC), the battery will be charged via Q3 (see
Single-Cell Li+ ActivePathTM Charger section).
USB OTG subsystem
5VIN to VBUS (Q1)
Q1 is a PMOS switch that can provide 5V supply to
VBUS from 5VIN pin which is typically connected to
the output of the Boost regulator (REG4). Q1 is
controlled by ONQ1[ ].
The current for Q1 is limited at 700mA to protect the
Boost regulator or external source connected at
5VIN from overloaded. If the current across Q1 is
over the limitation for more than 256ms, the switch
is turned off automatically. A 0 to 1 transition on
ONQ1[ ] is needed to turned Q1 on again after a
over-current condition.
Q1 may optionally interrupt the processor when there
is a over-current condition. Enable interrupts by
setting the nFLTMSKQ1[ ] bit.
CHGIN to VBUS (Q2)
Q2 is a NMOS switch that can power VBUS from
CHGIN. If Q2 is controlled by ONQ2[ ] and can only
be turned on if Q1 is turned off.
The current for Q2 is limited at 700mA prevent the
external source connected at CHGIN from
overloaded. If the current across Q2 is over the
limitation for more than 256ms, the switch is turned
off automatically. A 0 to 1 transition on ONQ2[ ] is
needed to turned Q2 on again after a over-current
condition.
Q2 also features an over voltage protection
function. When the voltage at CHGIN is above 6V,
Q2 is turned off automatically to avoid an overvoltage condition at VBUS.
Q2 may optionally interrupt the processor when there
is a over-current condition. Enable interrupts by
setting the nFLTMSKQ2[ ] bit.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 43 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Single-Cell Li+ ActivePathTM Charger
General Description
The charger features an advanced battery charger
that incorporates the patent-pending ActivePathTM
architecture for system power selection. This
combination of circuits provides a complete,
advanced battery-management system that
automatically selects the best available input
supply, manages charge current to ensure system
power availability, and provides a complete, highaccuracy (±0.5%), thermally regulated, full-featured
single-cell linear Li+ Charger that can withstand
input voltages of up to 12V at CHGIN.
voltage range. Independent of the OVPSET[ ]
setting, the charge cycle is not allowed to continue
until the input voltage falls back into the charger's
normal operating voltage range (i.e. below 6.0V).
In an input over-voltage condition this circuit limits
VVSYS to 4.6V, protecting any circuitry connected to
VVSYS from the over-voltage condition, which may
exceed this circuitry's voltage capability. This circuit
is capable of withstanding input voltages of up to
12V.
Table 7:
Input Over-Voltage Protection Setting
ActivePathTM Architecture
The ActivePathTM architecture
important functions:
performs
three
1) System Configuration Optimization
OVPSET[0]
OVP THRESHOLD
0
6.6V
1
7.0V
2) Input Protection
3) Battery-Management
System Configuration Optimization
The ActivePath circuitry monitors the state of the
input supply, the battery, and the system, and
automatically reconfigures itself to optimize the
power system. If a valid input supply at either
CHGIN or VBUS is present, ActivePath powers the
system from the input while charging the battery in
parallel. Of the two possible charging sources,
CHGIN is the preferred one over VBUS to allow the
battery to charge as quickly as possible, while
supplying the system. If a valid input supply is not
present, ActivePath powers the system from the
battery. If the input is present and the system
current requirement exceeds the capability of the
input supply, ActivePath allows system power to be
drawn from both the battery and the input supply.
Note that the battery will not be charged from VBUS
pin when VBUS is supplied by the 5VIN pin
(through Q1).
Input Protection for CHGIN
Input Over-Voltage Protection
The ActivePathTM circuitry features input overvoltage protection circuitry for CHGIN. This circuitry
disables charging when the input voltage exceeds
the voltage set by OVPSET[ ], but stands off the
input voltage in order to protect the system. Note
that the adjustable OVP threshold is intended to
provide the charge cycle with adjustable immunity
against upward voltage transients on the input, and
is not intended to allow continuous charging with
input voltages above the charger's normal operating
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Input Supply Overload Protection
TM
The ActivePath circuitry monitors and limits the
total current drawn from the input supply to a value
set by the CHGIN/VBUS configuration and
CHGLEV inputs, as well as the resistor connected
to ISET. When charging from VBUS pin, the input
current is limited to either 75mA, when CHGLEV is
driven to a logic-low, or 450mA, when CHGLEV is
driven to a logic-high. When charging from CHGIN,
the input current is limited to 2.25A, typically.
Input Under Voltage Lockout
If the input voltage applied to CHGIN falls below
3.5V (typ), an input under-voltage condition is
detected and the charger is disabled. Once an input
under-voltage condition is detected, a new charge
cycle will initiate when the input exceeds the undervoltage threshold by at least 500mV.
Battery Management
The ACT8600 features a full-featured, intelligent
charger for Lithium-based cells, and was designed
specifically to provide a complete charging solution
with minimum system design effort.
The core of the charger is a CC/CV (ConstantCurrent/Constant-Voltage), linear-mode charge
controller. This controller incorporates current and
voltage sense circuitry, an internal 70mΩ power
MOSFET, thermal-regulation circuitry, a fullfeatured state-machine that implements charge
control and safety features, and circuitry that
eliminates the reverse blocking diode required by
conventional charger designs.
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
The charge termination voltage is highly accurate
(±0.5%), and features a selection of charge safety
timeout periods that protect the system from
operation with damaged cells. Other features
include pin-programmable fast-charge current and
one current-limited nSTAT output that can directly
drive LED indicator or provide a logic-level status
signal to the host microprocessor.
Dynamic Charge Current Control (DCCC)
The ACT8600's ActivePathTM charger features
dynamic charge current control (DCCC) circuitry,
which acts to ensure that the system remains
powered while operating within the maximum output
capability of the power adapter. The DCCC circuitry
continuously monitors VSYS, and if the voltage at
VSYS drops by more than 200mV, the DCCC
circuitry automatically reduces charge current in
order to prevent VSYS from continuing to drop.
Charge Current Programming
The ACT8600's ActivePathTM charger features a
flexible charge current-programming scheme that
combines the convenience of internal charge
current programming with the flexibility of resistor
based charge current programming. Current limits
and charge current programming are managed as a
function of the CHGIN/VBUS configuration and
CHGLEV pins, in combination with RISET, the
resistance connected to the ISET pin.
When charging from CHGIN, the charger operates
in “AC-mode' with a charge current programmed by
RISET, and charge current is given by:
RISET (kΩ) = 2336 × (1V/ICHG(mA)) - 0.205
When charging from VBUS, the charger operates in
“USB-Mode”, with a maximum charge current
defined by the CHGLEV input, and Q3DBILIM[ ]
settings as summarized in Table 8.
Charger Input Interrupts
In order to ease input supply detection and
eliminate the size and cost of external detection
circuitry, the charger has the ability to generate
interrupts based upon the status of the input supply.
This function is capable of generating an interrupt
when the input is connected, disconnected, or both.
CHGIN Detection
An interrupt is generated any time the input supply
is connected to CHGIN when INSTAT[ ] bit is set to
1 and the INCON[-] bit is set to 1, and an interrupt is
generated any time the input supply is disconnected
when INSTAT[ ] bit is set to 1 and the INDIS[ ] bit is
set to 1.
The status of the input may be read at any time by
reading the INDAT[-] bit, where a value of 1
indicates that the valid input (V CHGIN
UVLO<VCHGIN<VOVP) is present, and a value of 0
indicates that a valid input is not present. Reading
the INSTAT[-] bit indicates when the input has
generated an interrupt; this bit will normally return a
value of 0, but will return value of 1 when an input
interrupt has been generated then the interrupt is
automatically cleared to 0 upon reading.
VBUS Detection
When a valid input supply is connected to VBUS,
an interrupt is generated when INVBUSR[ ] and
nVBUSMSK[] is set. Similarly, an interrupt is
generated when the input supply is disconnected
from VBUS when INVBUSF[ ] and nVBUSMSK[ ] is
set. The value of VBUSSTAT[ ], which indicate the
status of VBUS interrupts, is 1 if an interrupt is
generated by either INVBUSR[ ] or INVBUSF[ ].
VBUSDAT[ ] provides the real time status of VBUS
and its value is 1 when a valid charging source is
present at VBUS.
Note that the actual charge current may be limited
to a current lower than the programmed fast charge
current due to the ACT8600’s internal thermal
regulation loop. See the Thermal Regulation section
for more information.
Table 8:
Charge Current Programming
CHARGING
SOURCE
CHGLEV
Q3DBILIM
CHARGE CURRENT
(mA)
PRECONDITION CHARGE CURRENT
(mA)
VBUS
0
-
Min (75mA, ICHG )
Min (75mA, 10% × ICHG )
VBUS
1
0
Min (450mA, ICHG )
10% × ICHG
VBUS
1
1
Min (900mA, ICHG )
10% × ICHG
CHGIN
-
-
ICHG
10% × ICHG
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 45 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Charge-Control State Machine
PRECONDITION State
A new charging cycle begins with the
PRECONDITION state, and operation continues in
this state until VBAT exceeds the Precondition
Threshold Voltage. When operating in
PRECONDITION state, the cell is charged at 10%
of the programmed maximum fast-charge constant
current, ICHG.
Once VBAT reaches the Precondition Threshold
Voltage, the state machine jumps to the FASTCHARGE state. If VBAT does not reach the
Precondition Threshold Voltage before the
Precondition Timeout period expires, then the state
machine jumps to the TIMEOUT-FAULT state in
order to prevent charging a damaged cell. See the
Charge Safety Timers section for more information.
FAST-CHARGE State
In the FAST-CHARGE state, the charger operates
in constant-current (CC) mode and regulates the
charge current to the current set by RISET . Charging
continues in CC mode until VBAT reaches the charge
termination voltage (VTERM), at which point the statemachine jumps to the TOP-OFF state. If VBAT does
not reach VTERM before the total time out period
expires then the state-machine will jump to the
“EOC” state and will re-initiate a new charge cycle
after 32ms “relax”. See the Current Limits and
Charge Current Programming sections for more
information about setting the maximum charge
current.
TOP-OFF State
In the TOP-OFF state, the cell charges in constantvoltage (CV) mode. In CV mode operation, the
charger regulates its output voltage to the 4.20V
charge termination voltage, and the charge current
is naturally reduced as the cell approaches full
charge. Charging continues until the charge current
drops to END-OF-CHARGE current threshold, at
which point the state machine jumps to the ENDOF-CHARGE (EOC) state.
presents a high-impedance to the battery,
minimizing battery current drain and allowing the
cell to “relax”. The charger continues to monitor the
cell voltage, and re-initiates a charging sequence if
the cell voltage drops to 205mV (typ) below the
charge termination voltage.
SUSPEND State
The state-machine jumps to the SUSPEND state
any time the battery is removed, and any time the
input voltage falls below either the UVLO threshold
or exceeds the OVP threshold. Once none of these
conditions are present, a new charge cycle initiates.
A charging cycle may also be suspended manually
by setting the SUSPEND[ ] bit. In this case, initiate
a new charging sequence by clearing SUSPEND[ ]
to 0.
State Machine Status
The charger features the ability to generate
interrupts when the charger state machine
transitions. Set CHGEOCIN[ ] bit to 1 and
CHGSTAT[ ] bit to 1 to generate an interruption
when the charger state machine goes into the ENDOF-CHARGE (EOC) state. Set CHGEOCOUT[ ] bit
to 1 and CHGSTAT[ ] bit to 1 to generate an
interruption when the charger state machine exists
the EOC state.
The status of the charge state machine may be
read at any time by reading the CHGDAT[ ] bit,
where a value of 1 indicates State Machine is in
EOC state, and value is 0 when State Machine is
in other states. Reading the CHGSTAT[-] bit
indicates when a state machine transition has
generated an interrupt; this bit will normally return a
value of 0, but will return value of 1 when a state
transition occurs then automatically clear to 0 upon
reading.
For additional information about the charge cycle,
CSTATE[0:1] may be read at any time via I2C to
determine the current charging state.
If the state-machine does not jump out of the TOPOFF state before the Total-Charge Timeout period
expires, the state machine jumps to the EOC state
and will re-initiate a new charge cycle if VBAT falls
below termination voltage 205mV (typ). For more
information about the charge safety timers, see the
Charging Safety Times section.
END-OF-CHARGE (EOC) State
In the END-OF-CHARGE (EOC) state, the charger
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 46 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Figure 5:
Typical Li+ charge profile and ACT8600 charge states
A: PRECONDITION State
B: FAST-CHARGE State
C: TOP-OFF State
D: END-OF-CHARGE State
Figure 6:
Charger State Diagram
TEMP NOT OK
ANY STATE
(VCHGIN < VBAT) OR (VCHGIN < VCHGIN UVLO)
OR (VCHGIN > VOVP) OR (SUSCHG[ ] = 1)
SUSPEND
TEMP-FAULT
(VCHGIN > VBAT) AND (VCHGIN > VCHGIN UVLO)
AND (VCHGIN < VOVP) AND (SUSCHG[ ] = 0)
TEMP OK
PRECONDITION
TIME-OUT-FAULT
PRECONDITION
Time-out
Total Time-out
(VBAT > 2.85V) AND
(TQUAL = 32ms)
FAST-CHARGE
(VBAT = VTERM ) AND
(TQUAL = 32ms)
(VBAT < VTERM - 205mV )
AND (TQUAL = 32ms)
TOP-OFF
(IBAT < 10% x ICHG) OR (Total
Time-out) AND (TQUAL = 32ms)
END-OF-CHARGE
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 47 -
www.active-semi.com
Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
Table 11:
Table 9:
Charging Status Indication
CSTATE[0] CSTATE[1]
Total Safety Timer Setting
STATE MACHINE STATUS
1
1
PRECONDITION
1
0
FAST-CHARGE/TOP-OFF
0
1
END-OF-CHARGE
0
0
SUSPEND/DISABLE/FAULT
TOTTIMO[1]
TOTTIMO[0]
TOTAL TIMEOUT
PERIOD
0
0
4 hrs
0
1
5 hrs
1
0
6.5 hrs
1
1
Disabled
Thermal Regulation
Charge Status Indicator
The charger features an internal thermal regulation
loop that monitors die temperature and reduces
charging current as needed to ensure that the die
temperature does not exceed the thermal regulation
threshold of 100°C. This feature protects against
excessive junction temperature and makes the
device more accommodating to aggressive thermal
designs. Note, however, that attention to good
thermal designs is required to achieve the fastest
possible charge time by maximizing charge current.
The charger provides a charge-status indicator
output, nSTAT. nSTAT is an open-drain output
which sinks current when the charger is in an
active-charging state, and is high-Z otherwise.
nSTAT features an internal 8mA current limit, and is
capable of directly driving a LED without the need
of a current-limiting resistor or other external
circuitry. To drive an LED, simply connect the LED
between nSTAT pin and an appropriate supply,
such as VSYS. For a logic-level charge status
indication, simply connect a resistor from nSTAT to
an appropriate voltage supply.
Charge Safety Timers
The charger features programmable charge safety
timers which help ensure a safe charge by
detecting potentially damaged cells. These timers
are programmable via the PRETIMO[1:0] and
TOTTIMO[1:0] bits, as shown in Table 10 and Table
11. Note that in order to account for reduced charge
current resulting from DCCC operation, the charge
timeout periods are extended proportionally to the
reduction in charge current. As a result, the actual
safety period may exceed the nominal timer period.
The status of the charge timers may be read at any
time by reading the TIMRDAT[ ] bit, where a value
of 0 indicates that neither charge timer has expired,
and a value of 1 indicates that one of the charge
timers has expired.
Table 10:
PRECONDITION Safety Timer Setting
Table 12:
Charging Status Indication
STATE
nSTAT
PRECONDITION
Active
FAST-CHARGE
Active
TOP-OFF
Active
END-OF-CHARGE
High-Z
SUSPEND
High-Z
TEMPERATURE FAULT
High-Z
TIME-OUT FAULT
High-Z
Reverse-Current Protection
PRETIMO[1]
PRETIMO[0]
PRECONDITION
TIMEOUT PERIOD
0
0
40 mins
0
1
60 mins
1
0
80 mins
The charger includes internal reverse-current
protection circuitry that eliminates the need for
blocking diodes, reducing solution size and cost as
well as dropout voltage relative to conventional
battery chargers. When the voltage at CHGIN falls
below VBAT, the charger automatically reconfigures
its power switch to minimize current drawn from the
battery.
1
1
Disabled
Battery Temperature Monitoring
In a typical application, the TH pin is connected to
the battery pack's thermistor input, as shown in
Figure 7. The charger continuously monitors the
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
temperature of the battery pack by injecting a 100μA
(typ) current into the thermistor (via the TH pin) and
sensing the voltage at TH. The voltage at TH is
continuously monitored, and charging is suspended
if the voltage at TH exceeds either of the internal
VTHH and VTHL thresholds of 0.5V and 2.5V,
respectively.
The net resistance (from TH to GA) required to cross
the thresholds are given by:
100μA × RNOM × kHOT = 0.5V → RNOM × kHOT ≈
5kΩ
100μA × RNOM × kCOLD = 2.5V → RNOM ×
kCOLD ≈ 25kΩ
where RNOM is the nominal thermistor resistance at
room temperature, and kHOT and kCOLD represent
the ratios of the thermistor's resistance at the
desired hot and cold thresholds, respectively, to the
resistance at 25°C.
The status of the battery temperature pin may be
read at any time by reading the TEMPDAT[-] bit,
where a value of 1 indicates that battery temperature
is within the valid range, and a value of 0 indicates
that battery temperature has exceeded either of the
thresholds.
Figure 7:
Simple Configuration
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
- 49 -
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Copyright © 2012 Active-Semi, Inc.
ACT8600
Rev 3, 15-Nov-12
TQFN55-40 PACKAGE OUTLINE AND DIMENSIONS
SYMBOL
A
A1
DIMENSION IN
MILLIMETERS
DIMENSION IN
INCHES
MIN
MAX
MIN
MAX
0.700
0.800
0.028
0.031
0.200 REF
0.008 REF
A2
0.000
0.050
0.000
0.002
b
0.150
0.250
0.006
0.010
D
4.900
5.100
0.193
0.201
E
4.900
5.100
0.193
0.201
D2
3.450
3.750
0.136
0.148
E2
3.450
3.750
0.136
0.148
e
L
R
0.400 BSC
0.300
0.500
0.300
0.016 BSC
0.012
0.020
0.012
Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each
product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use
as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of
the use of any product or circuit described in this datasheet, nor does it convey any patent license.
Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact
[email protected] or visit http://www.active-semi.com.
is a registered trademark of Active-Semi.
Innovative PowerTM
ActivePMUTM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
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Copyright © 2012 Active-Semi, Inc.
Mouser Electronics
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