INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLR8743, IIRLR8743 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.1mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Synchronous Buck Converters For Computer Processor Power ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 160 A IDM Drain Current-Single Pulsed 640 A PD Total Dissipation @TC=25℃ 135 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.11 ℃/W Rth(j-a) Channel-to-ambient thermal resistance 110 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRLR8743, IIRLR8743 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=100μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=25A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX 30 V 2.35 V 3.1 mΩ ±0.1 μA VDS=24V; VGS= 0V 1 μA Is=20A, VGS = 0V 1 V 2 1.35 UNIT isc & iscsemi is registered trademark