Diode Semiconductor Korea Schottky Barrier Diode B5817WS-B5819WS FEATURES z z Extremely low VF. Low stored change,majority carrier conduction. z Low power loss/high efficient Pb Lead-free APPLICATIONS z z For Use In Low Voltage, High Frequency Inverters. Free Wheeling, And Polarity Protection Applications. SOD-323 ORDERING INFORMATION Type No. Marking Package Code B5817WS B5818WS B5819WS SJ SK SL SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 20 30 40 V RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Storage temperature TSTG -65~+150 ℃ www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode B5817WS-B5819WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition MIN MAX UNIT IR=1mA Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance B5817WS B5818WS B5819WS V(BR) IR VF CD 20 30 40 V VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS B5817WS IF=1A IF=3A 0.45 0.75 B5818WS IF=1A IF=3A 0.55 0.875 B5819WS IF=1A IF=3A 0.6 0.9 VR=4V,f=1MHz 1 120 mA V pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode B5817WS-B5819WS PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 K B C A D J E H Dim Min Max A 1.275 1.325 B 1.675 1.725 C 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J K 0.1 Typical 2.6 2.7 All Dimensions in mm www.diode.kr Diode Semiconductor Korea Schottky Barrier Diode B5817WS-B5819WS SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping B5817WS-B5819WS SOD-323 3000/Tape&Reel www.diode.kr