Hanbit HMS51232M4V-17 Sram module 2mbyte (512k x 32-bit), 3.3v Datasheet

HANBit
HMS51232M4V/Z4V
HAN
SRAM MODULE 2Mbyte (512K x 32-Bit), 3.3V
BIT
Part No.
HMS51232M4V, HMS51232Z4V
GENERAL DESCRIPTION
The HMS51232M4V/Z4V is a high-speed static random access memory (SRAM) module containing 524,288
words organized in a x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin,
single-sided, FR4-printed circuit board.
PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.
PIN ASSIGNMENT
FEATURES
Š Access times : 10, 12 and 15ns
Š High-density 2Mbyte design
Š High-reliability, high-speed design
Š Single + 3.3V ±0.3V power supply
Š Easy memory expansion /CE and /OE functions
Š All inputs and outputs are LVTTL-compatible
Š Industry-standard pinout
Š FR4-PCB design
Š Part Identification
NC
NC
PD2
PD3
Vss
PD0
PD1
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Vcc
A0
A7
A1
A8
A2
A9
DQ12
DQ4
DQ13
DQ5
DQ14
DQ6
DQ15
DQ7
Vss
/WE
A15
A14
/CE2
/CE1
- HMS51232M4V: SIMM design
- HMS51232Z4V: ZIP design
→ Pin-compatible with the HMS51232M4V
OPTIONS
MARKING
Š Timing
10ns access
-10
12ns access
-12
15ns access
-15
Š Packages
72-pin SIMM
M
72-pin ZIP
Z
/CE4
/CE3
A17
A16
/OE
Vss
DQ24
DQ16
DQ25
DQ17
DQ26
DQ18
DQ27
DQ19
A3
A10
A4
A11
A5
A12
Vcc
A13
A6
DQ20
DQ28
DQ21
DQ29
DQ22
DQ30
DQ23
DQ31
Vss
A18
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
72-Pin SIMM
TOP VIEW
1
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
PD0 = Open
PD1 = Open
PD2 = Open
PD3 = Vss
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
A0 - A18
19
A0-18
DQ 0-7
/WE
U1
/OE
/CE
/CE1
A0-18
DQ 8-15
/WE
U2
/OE
/CE
/CE2
A0-18
DQ16-23
/WE
U3
/OE
/CE
/CE3
A0-18
DQ24-31
/WE
/WE
/OE
/OE
U4
/CE
PD0 = Open
PD1 = Open
PD2 = Open
PD3 = Vss
/CE4
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +4.6V
Power Dissipation
PD
4W
TSTG
-65oC to +150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Operating Temperature
TA
0oC to +70oC
Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
*
( TA=0 to 70 o C )
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
3.0V
3.3V
3.6V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.0
-
Vcc+0.3V**
Input Low Voltage
VIL
-0.5*
-
0.8V
VIL(Min.) = -2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width ≤ 10ns) for I ≤ 20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, Unless otherwise specified)
PARAMETER
Input Leakage Current
Output Leakage Current
SYMBO
L
TEST CONDITIONS
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
MIN
MAX
UNITS
ILI
-2
2
µA
IL0
-2
2
µA
2.4
Output High Voltage
IOH = -4.0mA
VOH
Output Low Voltage
IOL = 8.0mA
VOL
V
0.4
V
* Vcc=3.3V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
SYMBOL
-10
-12
-15
UNIT
lCC
205
200
195
mA
Min. Cycle, /CE=VIH
lSB
50
50
50
mA
f=0MHZ, /CE≥VCC-0.2V,
VIN≥ VCC-0.2V or VIN≤0.2V
lSB1
10
10
10
mA
3
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
SYMBOL
MAX
UNIT
Input /Output Capacitance
VI/O=0V
CI/O
8
pF
Input Capacitance
VIN=0V
CIN
7
pF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level
0 to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (B)
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
Output Load (A)
VL=1.5V
+3.3V
50Ω
DOUT
319Ω
DOUT
Z0=50Ω
30pF
353Ω
5pF*
READ CYCLE
-10
PARAMETER
-12
-15
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Read Cycle Time
tRC
10
-
12
-
15
-
ns
Address Access Time
tAA
-
10
-
12
-
15
ns
Chip Select to Output
tCO
-
10
-
12
-
15
ns
Output Enable to Output
tOE
-
5
-
6
-
7
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
5
0
6
0
7
ns
Output Disable to High-Z Output
tOHZ
0
5
0
6
0
7
ns
4
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
Output Hold from Address Change
tOH
3
-
3
-
3
-
ns
Chip Select to Power Up Time
tPU
0
-
0
-
0
-
ns
Chip Select to Power Down Time
tPD
-
15
-
12
-
15
ns
WRITE CYCLE
-10
PARAMETER
-12
-15
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Write Cycle Time
tWC
10
-
12
-
10
-
ns
Chip Select to End of Write
tCW
7
-
8
-
10
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
7
-
8
-
10
-
ns
Write Pulse Width (/OE High)
tWP
7
-
8
-
10
-
ns
Write Pulse Width (/OE Low)
tWP1
10
-
12
-
15
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
tDW
5
-
6
-
7
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
ns
End of Write to Output Low-Z
tOW
3
-
3
-
3
-
ns
TIMING DIAGRAMS
See Part No. HMS51232M4/Z4
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
I SB, I SB1
L
H
H
Output Disable
High-Z
ICC
L
H
L
Read
DOUT
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
5
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
PACKAGING INFORMATION
SIMM Design
108.20 mm
3.18 mm
TYP(2x)
16 mm
6.35 mm
1
72
2.03 mm
1.02 mm
6.35 mm
1.27 mm
3.34 mm
95.25 mm
2.54 mm
0.25 mm MAX
MIN
1.29±0.08mm
Gold: 1.04±0.10 mm
1.27
Solder: 0.914±0.10 mm
(Solder & Gold Plating Lead)
ZIP Design
96.5 mm
CUT 1.5 mm
19 mm
72
1
6 mm
46 mm
2.54 mm
1 mm
1 mm
97.79 mm
1.29±0.08 mm
2.54
6
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4V/Z4V
ORDERING INFORMATION
1
2
3
HMS
4
5
6
7 8
9
512 32 M 4 V -15
3.3V
15ns Access Time
HANBit
Component
Memory
Modules
SIMM
x32bit
SRAM
512K
1. - Product Line Identifier
HANBit ------------------------------------------------------- H
2. - Memory Modules
3. - SRAM
4. - Depth : 512K
5. - Width : x 32bit
6. - Package Code
SIMM ------------------------------------------------------- M
ZIP
------------------------------------------------------- Z
7. - Number of Memory Components
8. - V : 3.3V
9. - Access time
10 ----------------------------------------------------------- 10ns
12 ----------------------------------------------------------- 12ns
15 ----------------------------------------------------------- 15ns
17 ----------------------------------------------------------- 17ns
20 ----------------------------------------------------------- 20ns
7
HANBit Electronics Co.,Ltd.
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