isc Product Specification INCHANGE Semiconductor isc Triacs BTA08-600C FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)Tj=105℃ 8 A ITSM Non-repetitive peak on-state current tp=20ms 80 A Operating junction temperature 110 ℃ -45~150 ℃ Tj Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case 2.5 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM, VR=VRRM, Tj=110℃ VD=VDRM, VD=VDRM, Tj=110℃ VD=12V; RL= 30Ω Gate trigger current mA mA 25 Ⅱ IH 0.01 0.5 0.01 0.5 UNIT 25 Ⅰ IGT MAX mA Ⅲ 25 Ⅳ 50 Holding current IGT= 0.1A, Gate Open 25 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω 1.3 V VTM On-state voltage IT= 11A; tp= 380μs 1.55 V isc website：www.iscsemi.cn