Gate Controlled Current Limiter IXCP 01N90E VDSS = 900 V IXCY 01N90E ID(limit) = 250mA RDS(on) = Ω 80 N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 40 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque with 3.5mm screw (TO-220) Weight 0.55/5 Nm/lb.in. TO-252 (IXCY) S TO-220 (IXCP) TAB G D TO-251/252 = 1 g, TO-220 = 4 g G = Gate, S = Source, Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 25 µA 900 VGS(th) VDS = VGS, ID = 25 µA 2.5 IGSS V 5 V VGS = ±20 V, VDS = 0 ±50 nA IDSS VDS = VDSS; VGS = 0 V 10 µA RDS(on) VGS = 10 V, ID = 50 mA Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 80 Ω IDP Plateau Current; VDS = 10 V, VGS = 10V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 130 mA © 2002 IXYS All rights reserved 100 TAB G S D = Drain, TAB = Drain Features • High output resistance in the saturated mode of operation • Rugged HDMOS process • Stable peak drain current limit • High voltage current regulator • International standard packages TM Applications • Current regulation • Over current and over voltage protection for sensitive loads • Linear regulator 98701-A (8/02) IXCP 01N90E IXCY 01N90E Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 20 V; ID = 100 mA, pulse test 40 133 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz mS pF 24 pF Crss 6.6 pF td(on) 15 ns 137 ns tr VDS = 500 V, ID = 50 mA td(off) VGS = 10 V, RG = 50 Ω (External) 11 ns tf 131 ns Qg(on) 7.5 nC 2.2 nC 3.0 nC ±50 ppm/K Qgs VGS = 10 V, VDS = 500 V, ID = 50 mA Qgd ∆IA(P)/∆ ∆T Plateau Current Shift VDS= 10 V, VGS= 10 V with Temperature ∆VAK/∆ ∆ IA(p) Dynamic Resistance VDS = 20 V, VGS= 10 V VF 125 IF = 50mA TO-220 TO-251/252 Pins: 1 - Gate 3 - Source 1.8 V 3.1 K/W 80 100 K/W K/W TO-252 AA Outline Dim. Min. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2 - Drain 4 - Drain Bottom Side kΩ RthJC RthCA TO-220 AB Dimensions 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 Millimeter Max.Min. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 5,187,117 5,237,481 Inches Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 5,486,715 5,381,025 6,306,728B1 IXCP 01N90E IXCY 01N90E 250 VGS = 15V 14V 100 13V 12V 150 11V 10V 100 9V 8V 50 ID - Milliamperes ID - Milliamperes 200 10 7V 6V 5V 0 0 10 20 30 VDS - Volts 40 1 50 200K 100K 20 40 60 80 100 120 140 160 ID - Milliamperes Figure 3. Dynamic Output Resistance RO vs. Drain 11V 120 10V 9V 80 -50 0 25 50 Temperature - 75 o 100 C R(th) JA : 10 K/W 10 6 -25 Figure 4. Drain Current vs, Temperature for a constant gate-source voltage. Current. Maximum Power Dissipation - Watts 140 100 0 14 VDS = 20V V GS = 12V 160 ID - milliamperes Dynamic Resistance RO - Ohms TJ = 25 C VDS = 20V 300K 8 12 180 o 12 10 Figure 2. Drain Current vs.Gate Voltage 500K 0K 8 VGS -Volts Figure 1, Output Characteristics at 25ºC 400K 6 Figure 5. Allowable Power Dissipation for various heat sinking conditions. Note that the junction temperature can be derated by increasing the ambient temperature a like amount. 15 20 4 30 40 50 60 80 100 2 0 25 50 75 100 125 o Ambient Temperature - C 150 125