UMS CHA3514 6-18ghz 4 bit digital variable amplifier Datasheet

CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage
travelling wave amplifier followed by a four
steps digital attenuator. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 6-18GHz
■ 19dBm saturated output power
■ 13 dB gain
■ 4bit attenuator for 39.5dB dynamic range
■ DC power consumption, 190mA @ 4.5V
■ Chip size:
5.54 x 2.30 x 0.1mm
Typical on wafer Measurements
Gain versus attenuation states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
6
18
GHz
G
Small signal gain @ Attenuator state 0dB
13
dB
Psat
Saturated Output power @ Attenuator state 0dB
19
dBm
ATT dyn
Attenuator range with 4bit
39.5
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA3514-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-18GHz Digital Variable Amplifier
CHA3514
Electrical Characteristics on wafer
Tamb = +25°C
Vd = Pads B, D = 4.5V, Vg = Pads A, E tuned for Id = 190mA
Symbol
Fop
G
ATT bit
ATT dyn
Parameter
Min
Typ
Max
Unit
18
GHz
Operating frequency range (1)
6
Small signal gain @ Attenuator state 0dB (1)
11
13
Attenuator bit: State 2.5dB
2
2.6
3.5
dB
State 5dB
4
5
6
dB
State 10 dB
9
10
11
dB
State 20dB
19
22
23
dB
35
39.5
dB
Attenuator dynamic range with 4bit
dB
P1dB
Output power at 1dB compression @ Attenuator
state 0dB (1)
18
dBm
Psat
Saturated Output power @ Attenuator state 0dB
(1)
19
dBm
Noise figure @ Attenuator state 0dB
7
dB
NF
RL_IN
Input Return Loss all attenuator states
-13
-8
dB
Output Return Loss all attenuator states
-15
-9
dB
Vd
Drain bias DC voltage (Pads B,D)
4.5
Id
Bias current @ small signal
190
Vc
Control voltage for Attenuator bits
RL_OUT
-5
V
250
mA
0
V
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA3514-8144 - 23 May 08
2/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum Drain bias voltage ( Pads B,D)
+5
V
Id
Drain bias current with Vd=4.5V
320
mA
Vg
Gate bias voltage (Pads A, E)
-2 to +0.4
V
Vc
Attenuator bits control voltage
-7 to +0.6
V
Pin
Maximum input power overdrive (2)
+20.0
dBm
Tch
Maximum channel temperature
+175
°C
Ta
Operating temperature range
-40 to +70
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
4bit VGA Control interface
The attenuator states are controlled by 8 voltages.
state
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Theoretical
attenuation
Voltage CONTROL PAD
dB
10A
(V)
10B
(V)
5A
(V)
5B
(V)
2.5A
(V)
2.5B
(V)
20A
(V)
20B
(V)
0 référence
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
35
37.5
-5
-5
-5
-5
0
0
0
0
-5
-5
-5
-5
0
0
0
0
0
0
0
0
-5
-5
-5
-5
0
0
0
0
-5
-5
-5
-5
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
0
0
-5
-5
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
0
-5
-5
-5
-5
-5
-5
-5
-5
-5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
-5
-5
-5
-5
-5
-5
-5
-5
Ref. : DSCHA3514-8144 - 23 May 08
3/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Typical chip on wafer Sij parameters for reference state
Tamb 25°C, B = D = 4.5V, Id = 190mA, 10A, 5A, 2.5A, 20A = -5V, 10B, 5B, 2.5B, 20B = 0V
Freq (GHz)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
dB(S11)
-0.8
-1.5
-2.1
-2.8
-4.1
-5.1
-6.3
-7.8
-9.3
-10.7
-12.2
-13.8
-15.0
-15.6
-16.2
-16.6
-16.1
-15.3
-14.6
-14.0
-13.0
-12.2
-11.8
-11.5
-11.2
-11.6
-12.5
-13.1
-13.2
-14.1
-15.7
-18.0
-19.7
-16.8
-12.7
-9.9
-7.1
-5.3
-4.1
-3.3
-2.8
-2.6
-2.4
-2.2
-2.2
-2.1
-2.1
P(S11) (°)
-42.4
-62.3
-81.0
-99.6
-116.9
-133.6
-148.7
-162.3
-175.1
174.7
167.3
161.4
157.0
155.3
156.1
154.3
151.1
148.6
145.0
136.7
127.2
119.0
108.7
96.1
83.5
73.4
64.6
57.6
52.4
44.8
40.2
39.2
66.0
97.0
96.4
89.2
80.6
68.5
54.4
41.5
30.8
21.1
11.6
3.5
-3.3
-10.1
-16.9
Ref. : DSCHA3514-8144 - 23 May 08
dB(S21)
-44.8
-24.1
-6.6
2.5
8.3
11.0
12.4
13.3
13.9
14.3
14.6
14.9
15.1
15.2
15.3
15.4
15.5
15.5
15.5
15.5
15.5
15.5
15.5
15.4
15.3
15.2
15.3
15.4
15.5
15.5
15.4
15.3
14.9
14.5
13.8
12.7
10.3
6.6
2.6
-0.8
-3.6
-5.8
-7.7
-9.3
-10.6
-11.9
-13.2
P(S21) (°)
-114.9
-166.4
156.9
94.4
37.6
-17.7
-65.1
-107.0
-145.1
178.9
144.5
111.4
79.3
47.9
16.9
-13.7
-44.0
-73.9
-103.8
-133.5
-163.1
167.2
137.5
107.7
77.9
49.1
20.1
-10.6
-42.1
-74.7
-108.3
-143.1
-178.3
144.9
105.1
64.1
19.1
-19.0
-47.9
-70.2
-89.1
-107.0
-125.3
-143.8
-162.9
176.9
156.5
4/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
dB(S12)
-69.9
-69.2
-67.0
-61.4
-69.4
-86.1
-78.4
-72.8
-70.0
-68.7
-66.8
-64.9
-67.2
-62.7
-59.7
-57.5
-55.6
-54.7
-53.2
-54.7
-56.0
-56.4
-59.8
-76.5
-65.0
-60.2
-59.5
-55.2
-49.9
-45.5
-43.7
-42.0
-41.7
-41.5
-41.0
-42.1
-45.0
-50.6
-54.4
-53.6
-54.2
-54.2
-55.5
-58.9
-62.1
-65.9
-62.2
P(S12) (°)
-91.3
-148.8
-165.4
-179.5
74.2
97.0
133.3
112.9
77.8
34.4
-5.4
-37.6
-61.6
-85.6
-109.9
-138.0
-167.3
171.2
136.4
117.6
96.6
74.2
43.6
22.9
178.8
148.9
146.9
142.1
141.5
117.2
87.3
61.2
36.3
14.5
-13.7
-42.4
-76.5
-91.9
-69.2
-67.9
-66.0
-73.1
-89.7
-95.4
-90.4
-60.7
-32.7
dB(S22)
-3.3
-4.6
-7.2
-10.5
-14.8
-17.4
-16.9
-15.5
-14.4
-13.5
-12.9
-12.4
-12.1
-12.0
-12.2
-12.7
-13.6
-15.1
-17.3
-20.4
-23.7
-24.5
-22.9
-21.9
-20.1
-17.4
-15.1
-13.5
-12.6
-12.6
-13.9
-16.6
-21.3
-22.3
-17.6
-15.1
-15.6
-20.1
-29.1
-19.5
-14.7
-12.0
-10.4
-9.4
-8.8
-8.6
-8.6
P(S22) (°)
-59.4
-89.6
-122.7
-160.5
147.5
88.8
43.1
15.9
-2.5
-17.5
-30.6
-42.3
-54.0
-66.0
-78.5
-90.1
-102.2
-113.3
-123.0
-125.3
-113.1
-88.9
-73.3
-66.9
-59.5
-59.3
-68.1
-81.7
-99.9
-121.4
-146.5
-177.9
136.0
46.6
-12.9
-51.6
-84.5
-107.2
-59.0
-18.0
-29.5
-43.1
-56.0
-69.1
-81.5
-92.4
-102.8
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Typical on wafer Measurements @ 25°C
Bias conditions: Vd = 4.5V, Vg tuned for Id = 190mA
Linear Gain versus attenuator states
Bit 2.5dB
Bit 5dB
Bit 10dB
Bit 20dB
Ref. : DSCHA3514-8144 - 23 May 08
5/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Attenuator bit values vs frequency for main states
Saturated output power @ nominal state
dB(S11) versus frequency for all states
Ref. : DSCHA3514-8144 - 23 May 08
6/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
dB(S22) versus frequency for all states
Noise Figure vs frequency @ nominal state
Ref. : DSCHA3514-8144 - 23 May 08
7/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Typical test fixture Measurements
Bias conditions: Vd=4.5V, Vg tuned for Id = 190mA
18
14
10
6
2
Gain (dB)
-2
-6
-10
-14
-18
-22
-26
-30
-34
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency GHz
-40°C
25°C
+70°C
Linear Gain versus attenuation states & temperature
Ref. : DSCHA3514-8144 - 23 May 08
8/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Chip Assembly and Mechanical Data
A
D
B
120pF
120pF
10A
E
5A
10B
5B
2.5A
2.5B
20A
20B
10nF
100nF
To Vd DC Drain Supply
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Recommended circuit bonding table
Label
10A, 10B
5A, 5B
2.5A, 2.5B
20A, 20B
B
D
A
E
Type
Vc
Vc
Vc
Vc
Vd
Vd
Vg
Vg
Ref. : DSCHA3514-8144 - 23 May 08
Decoupling
Not required
Not required
Not required
Not required
120pF / 10nF
120pF / 10nF
Not required
Not required
Comment
10dB pad control
5dB pad control
2.5dB pad control
20dB pad control
Drain Supply
Drain Supply
Gate Supply
Gate Supply
9/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
6-18GHz Digital Variable Amplifier
CHA3514
Bonding pad positions
Chip thickness: 100µm
Ordering Information
Chip form
:
CHA3514-99F/00
Elettronica S.p.A has the intellectual property of this MMIC and gives to United Monolithic Semiconductors
S.A.S. non-exclusive license to sell it.
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA3514-8144 - 23 May 08
10/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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