2N60 600V N-Channel Power MOSFET ● ● ● ● ● RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/dt capability, high ruggedness PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 Current 2A 4.4 @ VGS =10V Pin Definition: Case: TO-251,TO-252,TO-220,ITO-220 TO-262,TO-263 Package 1. Gate 2. Drain 3. Source Ordering Information Package Packing DMP2N60-TU TO-251 75pcs / Tube DMD2N60-TR TO-252 DMD2N60-TU TO-252 2.5Kpcs / 13” Reel 75pcs / Tube DMT2N60-TU TO-220 50pcs / Tube DMF2N60-TU ITO-220 50pcs / Tube DMK2N60-TU TO-262 DMG2N60-TU TO-263 50pcs / Tube 50pcs / Tube DMG2N60-TR TO-263 Part No. Block Diagram D G S 800pcs / 13" Reel ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) SYMBOL VDSS VGSS IAR ID IDM RATINGS 600 ±30 2.0 2.0 8.0 UNIT V V A A A EAS 115 mJ 44 W 23 W 34 W +150 -55 ~ +150 -55 ~ +150 °C °C °C TO-220/TO-262/TO-263 Power Dissipation ITO-220 PD TO-251/TO-252 Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 2.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C May,2015-REV.00 www.dyelec.com 1/9 2N60 600V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/ITO-220 TO-262/TO-263 RATING 62.5 θJA TO-251/ TO-252 110 TO-220/ITO-220 TO-262/TO-263 2.35 ITO-220 UNIT °C/W °C/W 5.5 θJC TO-251/ TO-252 2.9 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse e TEST CONDITIONS BVDSS VGS = 0V, ID = 250μA IDSS VDS = 600V, VGS = 0V 10 μA VGS = 30V, VDS = 0V 100 nA VGS = -30V, VDS = 0V -100 nA 4 4.0 4.4 V Ω 300 45 2 - pF pF pF 10 25 20 25 5.7 1.8 2 - ns ns ns ns nC nC nC 1.4 V 2.0 A 8.0 A IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA VGS = 10V, ID =1A Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =2A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 2.4A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS VGS = 0 V, ISD = 2.0 A Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 2A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature May,2015-REV.00 MIN TYP MAX UNIT www.dyelec.com 600 V 2.0 357 2 - ns μC 2/9 2N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms May,2015-REV.00 www.dyelec.com 3/9 2N60 600V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May,2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 4/9 2N60 600V N-Channel Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 250 200 150 100 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V) 4 Drain Current, ID (A) Continuous Drain-Source Current, ISD (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) May,2015-REV.00 www.dyelec.com 5/9 2N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing May,2015-REV.00 www.dyelec.com 6/9 2N60 600V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 7/9 2N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing TO-252 Mechanical Drawing May,2015-REV.00 www.dyelec.com 8/9 2N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. May,2015-REV.00 www.dyelec.com 8/9