AP65SL380AH Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D VDS @ Tj,max. ▼ Fast Switching Characteristic RDS(ON) ▼ Simple Drive Requirement 3 ID G ▼ RoHS Compliant & Halogen-Free 700V 0.38Ω 10A S Description AP65SL380A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Rating Units 650 V +20 V 3 10 A 3 6.5 A Drain Current, VGS @ 10V Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current 24 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 50 V/ns PD@TC=25℃ Total Power Dissipation 78.1 W 2 W 75 mJ 15 V/ns PD@TA=25℃ 4 Total Power Dissipation 5 Single Pulse Avalanche Energy EAS 6 dv/dt Peak Diode Recovery dv/dt TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 4 Value Units 1.6 ℃/W 62.5 ℃/W 1 201507061 AP65SL380AH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 650 - - V VGS=10V, ID=3.2A - - 0.38 Ω RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=5A - 10 - S IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=5A - 32 51 nC Qgs Gate-Source Charge VDS=480V - 9 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 13 - nC td(on) Turn-on Delay Time VDD=300V - 13 - ns tr Rise Time ID=5A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω - 32 - ns tf Fall Time VGS=10V - 8 - ns Ciss Input Capacitance VGS=0V - Coss Output Capacitance VDS=100V - 40 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Rg Gate Resistance - 3.6 7.2 Ω Min. Typ. . f=1.0MHz 1230 1965 pF Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=3.2A, VGS=0V - 0.8 - V trr Reverse Recovery Time IS=10A, VGS=0V - 310 - ns Qrr Reverse Recovery Charge dI/dt=50A/µs - 2.4 - µC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 4.Surface mounted on 1 in2 copper pad of FR4 board 5.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω 6.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP65SL380AH 20 10 o o T C =25 C 8 ID , Drain Current (A) 16 ID , Drain Current (A) T C =150 C 10V 9.0V 8.0V 7.0V 12 V G =6.0V 8 4 0.37Ω 6 4 2 0 0 0 4 8 12 16 20 0 8 V DS , Drain-to-Source Voltage (V) 16 24 32 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 350 4 I D =3.2A V G =10V I D =3.2A o 325 . Normalized RDS(ON) T C =25 C RDS(ON) (mΩ) 10V 9.0V 8.0V 7.0V V G =6.0V 3 2 1 0 300 4 6 8 -100 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 I D =250uA 8 Normalized VGS(th) IS (A) 1.5 6 T j = 150 o C T j = 25 o C 4 1 0.5 2 0 0 0 0.2 0.4 0.6 0.8 1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP65SL380AH f=1.0MHz 12 10000 I D =5A V DS =480V C iss 1000 0.37Ω 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 100 C oss 10 C rss 4 1 2 0 0.1 0 8 16 24 32 40 0 200 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 600 800 Fig 8. Typical Capacitance Characteristics 1 10us Operation in this area limited by RDS(ON) 10 100us 1ms 1 10ms 100ms 1s DC 0.1 o T C =25 C Single Pulse 0.01 . Normalized Thermal Response (Rthjc) 100 ID (A) 400 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP65SL380AH 2 100 I D =1mA 80 PD, Power Dissipation(W) Normalized BVDSS 1.6 1.2 0.8 0.4 60 40 20 0 0 -100 -50 0 50 100 150 0 o T j 50 100 150 o , Junction Temperature ( C) T C , Case Temperature( C) Fig 13. Normalized BVDSS v.s. Junction Fig 14. Total Power Dissipation Temperature 600 T j =25 o C RDS(ON) (mΩ) 500 400 V GS =10V . 300 200 2 4 6 8 10 I D , Drain Current (A) Fig 15. Typ. Drain-Source on State Resistance 5 AP65SL380AH MARKING INFORMATION Part Number 65SL380A YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence . 6