isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD540A DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Complement to Type BD539A APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -5 A Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 45 Junction Temperature 150 ℃ -65~150 ℃ IC PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD540A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A -0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A -0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A -1.5 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V -1.25 V ICEO Collector Cutoff Current VCB= -30V; IB= 0 -0.3 mA ICES Collector Cutoff Current VCE= -60V; VBE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A; VCE= -4V 30 hFE-3 DC Current Gain IC= -3A; VCE= -4V 12 isc Website：www.iscsemi.cn CONDITIONS MIN -60 B B B B 2 MAX UNIT V