Ordering number : ENA0935A ECH8652 P-Channel Power MOSFET http://onsemi.com –12V, –6A, 28mΩ, Dual ECH8 Features • • • Low ON-resistance 1.8V drive Composit type, facilitating high-density mounting • • Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit --12 V ±10 V --6 A --40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C PW≤10μs, duty cycle≤1% Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8652-TL-H Top View 0.25 2.9 Packing Type : TL 0.15 8 Marking WX 5 LOT No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 62012 TKIM/O0108PE TIIM TC-00001630 No. A0935-1/7 ECH8652 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS1 Conditions IDSS2 ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V Cutoff Voltage IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 6.6 ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V --1 μA --10 μA ±10 μA --1.4 11 V S 21 28 mΩ 31 45 mΩ 49 78 mΩ 1000 pF 320 pF Crss 250 pF Turn-ON Delay Time td(on) 11 ns Rise Time tr 72 ns Turn-OFF Delay Time td(off) 105 ns Fall Time tf 87 ns Total Gate Charge Qg 11 nC Gate-to-Source Charge Qgs 1.5 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--6A 2.9 IS=--6A, VGS=0V --0.81 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10μs D.C.≤1% G ECH8652 P.G 50Ω S Ordering Information Device ECH8652-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0935-2/7 ECH8652 ID -- VDS --8 --2 --7 --6 --5 --4 --3 --2 --1 C --25°C 1.5V V GS= -- Ta= 75° C --3 Drain Current, ID -- A --4 VDS= --6V --9 --4.5 V --4.0 V Drain Current, ID -- A --5 ID -- VGS --10 --2.5V --1. 8V --8.0V --6.0V --6 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 80 --3.0A 70 --1.5A 60 50 ID= --0.5A 30 20 10 0 --2 0 --4 --6 10 7 5 C 5° --2 = °C Ta 75 1.0 7 5 °C 25 3 2 0.1 7 5 A --1.5 V, I D= 40 --2.5 V GS= .0A I = --3 --4.5V, D = V GS 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT12950 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 0.01 --0.001 2 3 0.001 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT12951 5 2 td(off) 100 tf 7 5 3 tr 2 --0.6 --0.8 --1.0 --1.2 IT12952 f=1MHz 2 Ciss, Coss, Crss -- pF 3 --0.4 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 Switching Time, SW Time -- ns 50 --10 7 5 3 2 VDS= --6V 3 2 A Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 2 --2.5 IT12948 --0.5 , I D= --1.8V = V GS 60 IT12949 | yfs | -- ID --2.0 70 0 --60 --8 Gate-to-Source Voltage, VGS -- V --1.5 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 40 --0.5 IT12947 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 5°C 25°C --25° C --0.1 Ta= 7 0 5 25° --1 0 Ciss 1000 7 5 Coss 3 Crss 2 td(on) 10 7 --0.01 100 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12953 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12954 No. A0935-3/7 ECH8652 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --6A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT12955 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 --10 7 5 3 2 ASO IDP= --40A 1m s ID= --6A 10 DC ms 10 0m op era s tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12956 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12957 No. A0935-4/7 ECH8652 Embossed Taping Specification ECH8652-TL-H No. A0935-5/7 ECH8652 Outline Drawing ECH8652-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A0935-6/7 ECH8652 Note on usage : Since the ECH8652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A0935-7/7