ASI ASI10645 Npn silicon rf power transistor Datasheet

TVU004
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The ASI TVU004 is Designed for
A
45°
D
FEATURES:
•
•
• Omnigold™ Metalization System
S
B
S
G
C
D
J
E
MAXIMUM RATINGS
I
F
G
IC
1.59 A
VCBO
65 V
65 V
VCES
3.5 V
VEBO
PDISS
H
K
O
O
O
O
O
-65 C to +150 C
θ JC
7.0 OC/W
SYMBOL
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
MAXIMUM
.137 / 3.48
.572 / 14.53
.130 / 3.30
.245 / 6.22
H
TSTG
CHARACTERISTICS
MINIMUM
G
-65 C to +200 C
TJ
DIM
F
31.8 W @ TC = 25 C
#8-32 UNC
.255 / 6.48
.640 / 16.26
I
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10645
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 5 mA
20
V
BVCES
IC = 10 mA
65
V
BVCBO
IC = 5 mA
65
V
BVEBO
IE = 5 mA
3.5
V
ICBO
VCB = 40 V
hFE
VCE = 5.0 V
COB
VCE = 25 V
PG
IMD3
VCE = 25 V
POUT = 4.0 W
IC = 800 mA
20
f = 1.0 MHz
IC = 850 mA
f = 860 MHz
8.5
-60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
1.0
mA
200
---
20
pF
dB
dBc
REV. A
1/1
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