LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes ƽ LBZX84CxxxLT1G We declare that the material of product compliance with RoHS requirements. SERIES 3 1 2 SOT– 23 (TO–236AB) PLASTIC MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds 3 Cathode 1 Anode THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW R QJA PD 1.8 556 300 mW/°C °C/W mW 2.4 417 -55to+125 mW/°C °C/W °C Total Device Dissipation FR-5 Board* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,** T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temeprature R QJA T J , T stg **FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Ordering Information Device Package Shipping LBZX84CXXXLT1G SOT-23 3000/Tape&Reel LBZX84CXXXLT3G SOT-23 10000/Tape&Reel 1/5 LESHAN RADIO COMPANY, LTD. GENERAL DATA — 225mW SOT-23 ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) VZ2 (V) @ IZT2 = 1 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA Min Max ZZT2 (W) @ IZT2 = 10 mA LBZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 LBZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 LBZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 LBZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 LBZX84C3V6LT1G Z15 3.4 3.6 3.8 90 LBZX84C3V9LT1G Z16 3.7 3.9 4.1 90 LBZX84C4V3LT1G W9 4 4.3 4.6 LBZX84C4V7LT1G Z1 4.4 4.7 LBZX84C5V1LT1G Z2 4.8 5.1 LBZX84C5V6LT1G Z3 5.2 5.6 LBZX84C6V2LT1G Z4 5.8 6.2 LBZX84C6V8LT1G Z5 6.4 6.8 LBZX84C7V5LT1G Z6 7 LBZX84C8V2LT1G Z7 7.7 LBZX84C9V1LT1G Z8 Device* VZ3 (V) @ IZT3 = 20 mA (Note 3) Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA Min Max ZZT3 (W) @ IZT3 = 20 mA Min Max C (pF) @ VR = 0 f = 1 MHz 2.6 3.2 50 50 1 −3.5 0 450 600 3 3.6 50 20 1 −3.5 0 450 600 3.3 3.9 50 10 1 −3.5 0 450 2.9 600 3.6 4.2 40 5 1 −3.5 0 450 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 IR mA VR @ Volts LBZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 LBZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 LBZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 LBZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 LBZX84C15LT1G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 LBZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 LBZX84C18LT1G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 LBZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 LBZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 LBZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 VZ1 Below @ IZT1 = 2 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA LBZX84C27LT1G Y10 25.1 27 28.9 LBZX84C30LT1G Y11 28 30 32 LBZX84C33LT1G Y12 31 33 35 LBZX84C36LT1G Y13 34 36 LBZX84C39LT1G Y14 37 39 LBZX84C43LT1G Y15 40 LBZX84C47LT1G Y16 LBZX84C51LT1G Y17 LBZX84C56LT1G LBZX84C62LT1G VZ2 Below @ IZT2 = 0.1 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA 80 25 28.9 80 27.8 32 80 30.8 38 90 41 130 43 46 44 47 48 51 Y18 52 Y19 58 LBZX84C68LT1G Y20 LBZX84C75LT1G Y21 Device VZ3 Below @ IZT3 = 10 mA Min Max ZZT3 Below @ IZT3 = 10 mA 300 25.2 29.3 45 300 28.1 32.4 50 35 325 31.1 35.4 33.8 38 350 34.1 36.7 41 350 37.1 150 39.7 46 375 50 170 43.7 50 54 180 47.6 54 56 60 200 51.5 62 66 215 57.4 64 68 72 240 70 75 79 255 Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 0.05 21 24.4 29.4 70 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 41.5 70 0.05 27.3 33.4 41.2 45 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 IR mA @ Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25°C. 2/5 LESHAN RADIO COMPANY, LTD. GENERAL DATA — 225mW SOT – 23 8 7 TYPICAL T C VALUES F O R M M B Z 5 2 2 1 B LT 1 SERIES 6 5 4 V Z @ I ZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 12 θ VZ , TEMPERATURE COEFFICIENT (mV/ ° C) θ VZ , TEMPERATURE COEFFICIENT (mV/ °C) TYPICAL CHARACTERISICS TYPICAL T C VALUES F O R M M B Z 5 2 2 1 B LT 1 SERIES V Z @ I ZT 10 1 10 100 V Z , NOMINAL ZENER VOLTAGE (V) V Z , NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients (Temperature Range –55°C to +150°C) (Temperature Range –55°C to +150°C) 1000 T J = 25°C I Z(AC) = 0.1 I f = 1 kHz I Z = 1 mA I F , FORWARD CURRENT (mA) 1K Z ZT , DYNAMIC IMPEDANCE (Ω) 100 Z(DC) 100 5 mA 20 mA 10 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 10 150°C 75°C 25°C 0°C 1 1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 V Z , NOMINAL ZENER VOLTAGE V F , FORWARD VOLTAGE (V) Figure 3. Effect of Zener Voltage on Figure 4. Typical Forward Voltage Zener Impedance 3/5 LESHAN RADIO COMPANY, LTD. GENERAL DATA — 225mW SOT– 23 TYPICAL CHARACTERISICS 1000 1000 T A = 25°C 0 V BIAS I R , LEAKAGE CURRENT (µA) 100 C, CAPACITANCE (pF) 1 V BIAS 100 BIAS AT 50% OF V Z NOM 10 1 1 10 100 10 1 +150°C 0.1 0.01 +25°C 0.001 –55°C 0.0001 0.00001 0 10 20 30 40 50 60 80 V Z , NOMINAL ZENER VOLTAGE (V) V Z , NOMINAL ZENER VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Typical Leakage Current 90 100 100 T A = 25°C I Z , ZENER CURRENT (mA) T A = 25°C I Z , ZENER CURRENT (mA) 70 10 1 0.1 10 1 0.1 0.01 0 0 2 4 6 8 10 12 10 30 50 70 90 V Z , ZENER VOLTAGE (V) V Z , ZENER VOLTAGE (V) Figure 7. Zener Voltage versus Zener Current (V Z Up to 12 V) Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) 4/5 LESHAN RADIO COMPANY, LTD. GENERAL DATA — 225 mW SOT-23 Zener Voltage Regulator Diodes — Surface Mounted 225 mW SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V A L 3 1 2 B 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0180 0.0350 0.0830 0.0177 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0236 0.0401 0.0984 0.0236 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE S G V INCHES MIN MAX MILLIMETERS MIN MAX 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.60 1.02 2.50 0.60 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.45 0.89 2.10 0.45 0.037 0.95 0.037 0.95 0.079 2.0 C D H K J 0.035 0.9 0.031 0.8 ( inches mm ) SOT-23 Footprint (Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Tape and Reel Tape and Ammo Type No. Suffix T1 T3 MPQ (Units) 3K 10K (Refer to Section 10 for more information on Packaging Specifications.) 5/5