SIYU R KBJ601 ...... KBJ610 塑封硅整流桥堆 Single-phase Silicon Bridge Rectifier 反向电压 50---1000V 正向电流 6.0 A Reverse Voltage 50 to 1000 V Forward Current 6.0 A 特征 Features .157 (4.0) + ~ .043(1.1) .035(0.9) ·低的反向漏电流 Low reverse leakage ·较强的正向浪涌承受能力 High forward surge capability ￠.134(8.4) .122(3.1) ·浪涌承受能力：170 A Surge overload rating:170 Amperes peak 机械数据 Mechanical Data - .074(1.9) .059(1.5) .083(2.1) .069(1.7) ~ .146(3.7) .130(3.3) .057(1.45) .041(1.05) .602(15.3) .578(14.7) .382(9.7) .366(9.3) .995(25.3) .983(24.7) .708(18.0) .669(17.0) .134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .114(2.8) .098(2.5) ·封装: 塑料封装 Case: Molded Plastic ·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body .031(0.8) .023(0.6) ·安装位置: 任意 .303(7.7) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .287(7.3) ·重量: 4.6 克 Mounting Position: Any Weight:4.6 Grams Unit：inch（mm） 极限值和温度特性 TA = 25℃ 除非另有规定。 Maximum Ratings & Thermal Characteristics 符号 Ratings at 25℃ ambient temperature unless otherwise specified. KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 单位 Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit 最大可重复峰值反向电压 Maximum repetitive peak reverse voltage VRRM 100 200 300 400 600 800 1000 V 最大均方根电压 Maximum RMS voltage VRMS 70 140 210 280 420 560 700 V 最大直流阻断电压 Maximum DC blocking voltage VDC 100 200 300 400 600 800 1000 V 加散热片TC =111℃ IF(AV) 6.0 2.8 A IFSM 170 A @TA = 75℃ 最大反向峰值电流 Maximum peak reverse current full cycle IR(AV) 30 µA 典型热阻 Typical thermal resistance RθJA 10 ℃/W 最大正向平均整流电流 Maximum average forward rectified current 无散热片Ta=25℃ 峰值正向浪涌电流 8.3ms单一正弦半波 Peak forward surge current 8.3 ms single half sine-wave 工作结温和存储温度 Operating junction and storage temperature range Tj, TSTG -50 --- +150 ℃ 电特性 TA = 25℃ 除非另有规定。 Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. 符号 KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 单位 Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit 最大正向电压 IF = 3.0A Maximum forward voltage 最大反向电流 Maximum reverse current 典型结电容 VR = 4.0V, f = 1MHz Type junction capacitance - 125 - TA= 25℃ TA=100℃ VF 1.0 V IR 10 500 µA Cj 40 pF 大昌电子 DACHANG ELECTRONICS SIYU R KBJ601...... KBJ610 特性曲线 Characteristic Curves 正向特性曲线（典型值） TYPICAL FORWARD CHARACTERISTIC 正向电流降额曲线 FORWARD CURRENT DERATING CURVE 4.0 Tl=150℃ 1 Tl=25℃ Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 正向电压 0.9 1.0 1.1 平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A) 正向电流 IF(A) IF Instantaneous Forward Current (A) 10 on glass-epoxi substrate + ~ - P.C.B. soldering land 5mmф sine wave R-load free in air 2.0 1.0 00 1.2 ~ 3.0 40 80 120 160 环境温度 Ta(°C) Tamb, ambient temperature (°C) VF(V) VF Instantaneous Forward Voltage (V) 浪涌特性曲线（最大值） 功率损耗曲线 MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT FORWARD POWER DISSIPATION 14 IFSM 240 160 功率损耗 P(W) 峰值正向浪涌电流 IFSM(A) IFSM Peak Forward Surge Current (A) 12 10mS 1 Cycle non-repetitive Tj=25℃ before 120 80 40 0 0 2 5 10 20 通过电流的周期 50 100 FORWARD POWER DISSIPATION PF(W)) 10mS 200 10 8 6 4 Sine wave Tj=150℃ 2 0 0 1 2 3 4 5 6 7 平均整流电流 I0(A) AVERAGE RECGIFIED FORWARD CURRENT Io(A) Number of Cycles at 60 Hz. 正向电流降额曲线 FORWARD CURRENT DERATING CURVE 平均正向电流 IF(AV) (A) IF(A) Average Forward Rectified Current (A) 10 Tc-sensing point 9 + 8 ~ ~ - Tc sine wave R-load with heatsink 7 6 5 4 3 2 1 00 40 80 120 160 管体温度 TC(°C) Case Temperature Tc(℃) 大昌电子 DACHANG ELECTRONICS - 126 -