DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857 PNP general purpose transistors Product specification Supersedes data of 1997 Apr 17 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846 and BC847. handbook, halfpage 3 3 MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER 1 MARKING CODE(1) BC856 3D∗ BC857A 3E∗ BC856A 3A∗ BC857B 3F∗ BC856B 3B∗ BC857C 3G∗ BC857 3H∗ 2 1 2 Top view MAM256 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC856 − −80 V BC857 − −50 V BC856 − −65 V BC857 − −45 V collector-emitter voltage open base VEBO emitter-base voltage − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA open collector Ptot total power dissipation − 250 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Mounted on an FR4 printed-circuit board. 1999 Apr 12 2 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT −15 nA ICBO collector cut-off current IE = 0; VCB = −30 V − −1 IE = 0; VCB = −30 V; Tj = 150 °C − − −4 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − 100 nA hFE DC current gain IC = −2 mA; VCE = −5 V; see Figs 2, 3 and 4 125 − 475 BC857 125 − 800 BC856A; BC857A 125 − 250 BC856B; BC857B 220 − 475 BC856 420 − 800 IC = −10 mA; IB = −0.5 mA − −75 −300 mV IC = −100 mA; IB = −5 mA − −250 −650 mV BC857C VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −700 − mV IC = −100 mA; IB = −5 mA; note 1 − −850 − mV IC = −2 mA; VCE = −5 V; note 2 −600 −650 −750 mV VBE base-emitter voltage IC = −10 mA; VCE = −5 V; note 2 − − −820 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 4.5 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 10 dB Notes 1. VBEsat decreases by about −1.7 m K/V with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 MBH726 300 handbook, full pagewidth hFE 200 VCE = −5 V 100 0 −10−1 −1 −102 −10 IC (mA) −103 BC856A; BC857A. Fig.2 DC current gain; typical values. MBH727 400 handbook, full pagewidth hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 BC856B; BC857B. Fig.3 DC current gain; typical values. 1999 Apr 12 4 −102 IC (mA) −103 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 MBH728 600 handbook, full pagewidth hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 BC857C. Fig.4 DC current gain; typical values. 1999 Apr 12 5 −102 IC (mA) −103 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 12 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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