IRF IRLML2502TR Hexfet power mosfet Datasheet

PD - 93757C
IRLML2502
HEXFET® Power MOSFET
l
l
l
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Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
G 1
VDSS = 20V
3 D
S
RDS(on) = 0.045Ω
2
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Micro3
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
Typ.
Max.
Units
75
100
°C/W
1
04/30/03
IRLML2502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
–––
0.60
5.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.01
0.035
0.050
–––
–––
–––
–––
–––
–––
8.0
1.8
1.7
7.5
10
54
26
740
90
66
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.045
VGS = 4.5V, ID = 4.2A
Ω
0.080
VGS = 2.5V, ID = 3.6A
1.2
V
VDS = VGS, ID = 250µA
–––
S
VDS = 10V, ID = 4.0A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
12
ID = 4.0A
2.7
nC
VDS = 10V
2.6
VGS = 5.0V
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 6Ω
–––
RD = 10Ω
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units

1.3

33
–––
–––
–––
–––
16
8.6
1.2
24
13
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.3A, VGS = 0V
TJ = 25°C, IF = 1.3A
di/dt = 100A/µs
D
S

Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRLML2502
100
100
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
BOTTOM 2.25V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
2.25V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
2.25V
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
V DS = 15V
20µs PULSE WIDTH
2.4
2.8
3.2
3.6
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.0
20µs PULSE WIDTH
TJ = 150 °C
4.0
ID = 4.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLML2502
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
1000
800
Ciss
600
400
200
Coss
Crss
0
1
10
VGS , Gate-to-Source Voltage (V)
1200
ID = 4.0A
VDS = 10V
8
6
4
2
0
10
0
100
4
8
12
16
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
I D , Drain Current (A)
100
TJ = 150 ° C
1
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100us
1ms
1
TJ = 25 ° C
0.1
0.4
10us
10
1.4
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML2502
ID , Drain Current (A)
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLML2502
RDS(on) , Drain-to -Source Voltage ( Ω )
0.05
0.04
Id = 4.0A
0.03
0.02
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
VGS, Gate -to -Source Voltage ( V )
Fig 11. On-Resistance Vs. Gate Voltage
6
7.0
0.30
VGS = 2.5V
0.20
0.10
VGS = 4.5V
0.00
0
10
20
30
40
iD , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
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IRLML2502
Micro3 Package Outline
Dimensions are shown in millimeters (inches)
D
-B-
3
E
-A-
LEAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - DRAIN
3
3
DIM
H
1
0.20 ( .008 )
2
M
A M
e
e1
θ
A
INCHES
MILLIMETERS
A
MIN
.032
MAX
.044
MIN
0.82
MAX
1.11
A1
.001
.004
0.02
0.10
B
.015
.021
0.38
0.54
C
.004
.006
0.10
0.15
D
.105
.120
2.67
3.05
e
.0750 BASIC
1.90 BASIC
e1
.0375 BASIC
0.95 BASIC
E
.047
.055
1.20
1.40
H
.083
.098
2.10
2.50
L
.005
.010
0.13
0.25
θ
0°
8°
0°
8°
MINIMUM RECOMMENDED FOOTPRINT
-CB
0.80 ( .031 )
3X
0.008 (.003)
A1
3X
0.10 (.004)
M
C AS B S
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
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L
3X
C
3X
0.90
( .035 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
7
IRLML2502
Part Marking Information
Micro3
Notes : T his part marking information applies to devices produced before 02/26/2001
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
EXAMPLE: T HIS IS AN IRLML6302
PART NUMBER
DATE
CODE
PART NUMBER CODE REFERENCE:
1A =
1B =
1C =
1D =
1E =
1F =
1G =
1H =
IRLML2402
IRLML2803
IRLML6302
IRLML5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BY A LETT ER
DAT E CODE EXAMPLES:
YWW = 9503 = 5C
YWW = 9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR
PART NUMBER
Y = YEAR
W = WEEK
LOT
CODE
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
8
IRLML 2402
IRLML2803
IRLML 6302
IRLML 5103
IRLML6402
IRLML6401
IRLML2502
IRLML5203
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
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IRLML2502
Micro3 Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/03
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9

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