SavantIC Semiconductor Product Specification BUX39 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current ,high speed APPLICATIONS ·For switching amplifiers,power gates, switching regulators,switching circuits converters,inverters and control circuits PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A ICM Collector current-peak 40 A IB Base current 6 A PT Total power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.46 /W SavantIC Semiconductor Product Specification BUX39 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 90 V V(BR)EBO Emitter-base breakdown votage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=12 A;IB=1.2 A 0.7 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=20 A;IB=2.5 A 1.25 1.6 V Emitter-base saturation voltage IC=20 A;IB=2.5 A 2.1 2.5 V ICEX Collector cut-off current VCE=120V; VBE=-1.5V TC=125 1.0 5.0 mA ICEO Collector cut-off current VCE=70V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=12A ; VCE=4V 15 hFE-2 DC current gain IC=20A ; VCE=4V 8 Transition frequency IC=1A ; VCE=15V 8 VBEsat fT CONDITIONS MIN TYP. MAX UNIT 45 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=20A ;IB1=-IB2=-2.5A VCC=30V 2 0.80 1.5 µs 0.55 1.0 µs 0.15 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUX39