Seme LAB BUX98 High voltage fast switching Datasheet

BUX98A
BUX98A
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
26.67
(1.050)
Max.
HIGH VOLTAGE FAST
SWITCHING
4.47 (0.176)
Rad.
2 Pls.
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
1.09 (0.043)
0.97 (0.038)
Dia.
1.63 (0.064)
1.52 (0.060)
12.19 (0.48)
11.18 (0.44)
Description
30.40 (1.197)
29.90 (1.177)
4.09 (0.161)
3.84 (0.151)
2 Pls
2
The BUX98 and BUX98A are silicon multiepitaxial
mesa NPN transistors in JEDEC TO-3 metal-case
intended and industrial applications from single and
three-phase mains operation.
11.18 (0.440)
10.67 (0.420)
1
16.97 (0.668)
16.87 (0.664)
(TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
BUX98
BUX98A
850
850
400
1000
1000
450
VCER
Collector – Emitter Voltage (RBE £ 10W)
VCES
Collector – Base Voltage (VBE = 0 )
VCEO
Collector – Emitter Voltage(IB = 0)
VEBO
Emitter – Base Voltage (IC = 0)
7V
IC
Collector Current
30A
ICM
Collector Peak Current non (tp = 5ms)
60A
ICP
Collector Peak Current non Rep (tp = 20ms)
80A
IB
Base Current
8A
IBM
Base Peak Current (tp = 5ms)
30A
Ptot
Total Power Dissipation Tcase < 25°C
TSTG
Storage Temperature
-65 to +150°C
TJ
Junction Temperature
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
250W
Prelim.9/00
BUX98A
BUX98A
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)*
VCER(sus)*
VCE(sat)*
Collector - Emitter
Sustaining Voltage
Collector - Emitter
Sustaining Voltage
Collector – Emitter
Saturation Voltage
ICER
Collector Cutoff Current
ICES
Collector Cutoff Current
ICEO
Test Conditions
IC = 200mA
Min.
BUX98
400
BUX98A
450
BUX98
850
Typ.
Max. Unit
IC = 1A
L = 2mH
IC = 20A
IB = 4A
IC = 16A
IB = 3.2A
IC = 24A
IB = 5A
IC = 20A
IB = 4A
BUX98
1.6
IC = 16A
IB = 3.2A
BUX98A
1.6
BUX98A
BUX98
BUX98A
VCE = VCES
RBE = 10W
Tcase = 125°C
VCE = VCES
1000
1.5
V
1.5
5
1
mA
8
mA
400
mA
VBE = 0
Tcase = 125°C
4
mA
Collector Cutoff Current
VCES = VCEO
IC = 0
2
mA
IEBO
Emitter Cutoff Current
VEB = 5V
IC = 0
2
mA
ton
Turn–On Time
VCC = 150V
IC = 20A
1
ts
Storage Time
tf
Fall Time
ton
Turn–On Time
ts
Storage Time
tf
Fall Time
BUX98
IB1 = IB2 = 4A
VCC = 150V
IB1 = IB2 = 3.2A
3
mA
0.8
1
IC = 16A
BUX98A
3
mA
0.8
* Pulsed: Pulse duration = 300ms,duty cycle =1.5%
THERMAL CHARACTERISTICS
Rth j-case
Thermal Resistance Junction to Case
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
0.7max °C/W
Prelim.9/00
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