isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 80V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A ·Complement to Type BDW46 APPLICATIONS ·Designed for general purpose and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 85 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.47 ℃/W BDW41 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA 3.0 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 3.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 5A; VCE= 4V 1000 hFE-2 DC Current Gain IC= 10A; VCE= 4V 250 Current-Gain—Bandwidth Product IC= 3A; VCE= 3V; ftest= 1MHz Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz fT COB isc Website：www.iscsemi.cn 80 UNIT B B 2 V 4 MHz 200 pF