Infineon AUIRL1404S Automotive grade Datasheet

AUIRL1404S
AUIRL1404L
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
 Advanced Planar Technology
 Logic Level Gate Drive
 Low On-Resistance
 Dynamic dV/dT Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
VDSS
Package Type
AUIRL1404L
TO-262
4.0m
ID
160A
D
D -Pak
S
D
S
G
G
TO-262
AUIRL1404L
D2Pak
AUIRL1404S
G
Gate
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
2
AUIRL1404S
RDS(on) max.
D
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in Automotive and a wide variety of other applications.
Base part number
40V
S
Source
Orderable Part Number
AUIRL1404L
AUIRL1404S
AUIRL1404STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
160
ID @ TC = 100°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
110
640
3.8
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Thermal Resistance
Symbol
RJC
RCS
RJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mount), D2 Pak
Units
A
200
1.3
± 20
520
95
20
5.0
-55 to + 175
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Typ.
Max.
Units
–––
0.50
–––
0.75
–––
40
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRL1404S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
40
–––
–––
––– 0.038 –––
V
Conditions
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 95A 
–––
–––
4.0
–––
–––
5.9
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
gfs
Forward Trans conductance
Drain-to-Source Leakage Current
–––
–––
–––
20
S
IDSS
93
–––
VDS = 25V, ID = 95A
VDS = 40V, VGS = 0V
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
Gate-to-Source Reverse Leakage
–––
–––
-200
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
m
µA
nA
VGS = 4.3V, ID = 40A 
VDS = 32V,VGS = 0V,TJ =150°C
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
270
38
130
140
48
60
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6600
1700
350
6700
1500
1500
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
ID = 95A
nC VDS = 32V
VGS = 5.0V, See Fig. 6 
VDD = 20V
ID = 95A
ns
RG= 2.5VGS = 4.5V 
RD = 0.25 
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
pF
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 32V ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
–––
––– 160
–––
–––
640
–––
–––
–––
–––
63
170
1.3
94
250
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 95A,VGS = 0V 
ns TJ = 25°C ,IF = 95A
nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
 Limited by TJmax, starting TJ = 25°C, L = 0.35mH, RG = 25, IAS = 95A, VGS =10V. (See fig.12)
 ISD 95A, di/dt 160A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 300µs; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
 This is applied to D2 Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
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AUIRL1404S/L
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
1000
4.3V
100
20µs PULSE WIDTH
TJ = 25 ° C
10
0.1
1
10
100
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 °C
TJ = 175 °C
V DS = 15V
20µs PULSE WIDTH
6.0
7.0
Fig. 3 Typical Transfer Characteristics
3
1
10
100
Fig. 2 Typical Output Characteristics
1000
5.0
20µs PULSE WIDTH
TJ= 175 °C
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
VGS , Gate-to-Source Voltage (V)
4.3V
10
0.1
VDS , Drain-to-Source Voltage (V)
100
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
8.0
2.5
ID = 160A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = 10V
0
20
40
60
80 100 120 140 160 180
T J, Junction Temperature
( °C)
Fig. 4 Normalized On-Resistance vs. Temperature
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AUIRL1404S/L
10000
VGS , Gate-to-Source Voltage (V)
8000
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
4000
Coss
2000
0
12
8
4
0
10
100
200
300
400
500
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
TJ = 175 °C
10
10us
100us
100
1ms
TJ = 25 °C
1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
4
0
10000
1000
100
FOR TEST CIRCUIT
SEE FIGURE 13
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
V DS = 32V
V DS = 20V
16
Crss
1
ID = 95A
10
3.0
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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AUIRL1404S/L
160
LIMITED BY PACKAGE
I D , Drain Current (A)
120
80
40
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.01
0.001
0.00001
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRL1404S/L
EAS , Single Pulse Avalanche Energy (mJ)
15V
1200
L
VDS
D.U.T
IAS
tp
+
V
- DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
I AS
ID
39A
67A
95A
TOP
1000
RG
20V
DRIVER
BOTTOM
800
600
400
200
0
25
50
75
100
125
Starting T J, Junction Temperature
150
175
( ° C)
Fig 12c. Maximum Avalanche Energy vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 13a. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 13b. Gate Charge Waveform
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AUIRL1404S/L
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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AUIRL1404S/L
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Part Number
AUL1404S
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL1404S/L
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUL1404L
YWWA
IR Logo
XX

Date Code
Y= Year
WW= Work Week
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL1404S/L
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRL1404S/L
Qualification Information
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Qualification Level
Moisture Sensitivity Level
D2-Pak
Machine Model
Human Body Model
ESD
MSL1
TO-262
Charged Device Model
RoHS Compliant
Class M4 (+/- 800V)†
AEC-Q101-002
Class H2 (+/- 4000V)†
AEC-Q101-001
Class C5 (+/- 2000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
10/27/2015
Comments


Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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