Siemens BCV61C Npn silicon double transistors (to be used as a current mirror good thermal coupling and vbe matching) Datasheet

NPN Silicon Double Transistors
BCV 61
Preliminary Data
To be used as a current mirror
● Good thermal coupling and VBE matching
● High current gain
● Low emitter-saturation voltage
●
Type
Marking
Ordering Code
(tape and reel)
BCV 61 A
BCV 61 B
BCV 61 C
1Js
1Ks
1Ls
Q62702-C2155
Q62702-C2156
Q62702-C2157
Pin Configuration
Package1)
SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
(transistor T1)
VCE0
30
V
Collector-base voltage (open emitter)
(transistor T1)
VCB0
30
Emitter-base voltage
VEBS
6
Collector current
IC
100
Collector peak current
ICM
200
Base peak current (transistor T1)
IBM
200
Total power dissipation, TS ≤ 99 ˚C2)
Ptot
300
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Junction - ambient2)
Rth JA
≤
240
Junction - soldering point
Rth JS
≤
170
mA
Thermal Resistance
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics for transistor T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CE0
30
–
–
Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CB0
30
–
–
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBS
6
–
–
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0
–
–
–
–
15
5
DC current gain1)
IC = 0.1 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
hFE
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
Base-emitter saturation voltage1)
IC = 10 mA, IC = 0.5 mA
IC = 100 mA, IC = 5 mA
VBEsat
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
nA
µA
–
100
110
200
420
BCV 61 A
BCV 61 B
BCV 61 C
V
–
180
290
520
220
450
800
mV
–
–
90
200
250
600
–
–
700
900
–
–
580
–
660
–
700
770
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
0.4
–
–
–
–
1.8
DC characteristics for transistor T2
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
V
VBES
Matching of transistor T1 and transistor T2
at IE2 = 0.5 mA and VCE1 = 5 V
TA = 25 ˚C
TA = 150 ˚C
–
IC1 / IC2
IC1 / IC2
0.7
0.7
–
–
1.3
1.3
IE2
–
5
–
mA
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT
–
250
–
MHz
Collector-base capacitance
VCB = 10 V, IC = iC = 0, f = 1 MHz
Ccb
–
3
–
pF
Input capacitance
VEB = 0.5 V, IC = iC = 0, f = 1 MHz
Cibo
–
8
–
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 kΩ
f = 1 kHz, B = 200 Hz
F
–
2
–
dB
Input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e
–
4.5
–
kΩ
Open-circuit reverse voltage transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e
–
2
–
10– 4
Short-circuit forward current transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e
100
–
900
–
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e
–
30
–
µS
Thermal coupling of transistor T1 and
T1: VCE = 5 V
transistor T21)
Maximum current for thermal stability of IC1
AC characteristics for transistor T1
1)
Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm.
Semiconductor Group
3
BCV 61
Test circuit for current matching
Note: Voltage drop at contacts: VCO <
2
VT = 16 mV
3
Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under
condition of IC1 / IE2 = 1.3
Note: BCV 61 with emitter resistors
Semiconductor Group
4
BCV 61
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Semiconductor Group
Permissible pulse load Ptot max/Ptot DC = f (tp)
5
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