Diodes AH276Z4-CE1 Complementary output hall effect latch Datasheet

Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
General Description
Features
The AH276 is an integrated Hall sensor with output
driver designed for electronic commutation of brushless DC motor applications. The device includes an onchip Hall sensor for magnetic sensing, an amplifier
that amplifies the Hall voltage, a Schmitt trigger to
provide switching hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of Hall sensitivity and two
complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits.
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·
·
·
·
·
·
Placing the device in a variable magnetic field, if the
magnetic flux density is larger than threshold BOP, the
pin DO will be turned low (on) and pin DOB will be
turned high (off). This output state is held until the
magnetic flux density reverses and falls below BRP,
then causes DO to be turned high (off) and DOB
turned low (on).
·
·
·
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AH276
On-Chip Hall Sensor
3.5V to 16V Supply Voltage
350mA (avg) Output Sink Current
Reversed Supply Voltage Protection
Build in Over Temperature Protection Function
-20oC to 85oC Operating Temperature
Low Profile TO-94 (SIP-4L) Package
ESD Rating: 300V (Machine Model)
Applications
Dual-Coil Brushless DC Motor
Dual-Coil Brushless DC Fan
Revolution Counting
Speed Measurement
AH276 is available in TO-94 (SIP-4L) package.
TO-94
Figure 1. Package Type of AH276
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Pin Configuration
Z4 Package
(TO-94)
4
GND
3
2
DOB
DO
1
VCC
Figure 2. Pin Configuration of AH276 (Front View)
Pin Description
Pin Number
Pin Name
Function
1
VCC
Supply voltage
2
DO
Output 1
3
DOB
Output 2
4
GND
Ground
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Functional Block Diagram
VCC
DO
1
2
Temperature
Compensation
Regulator
4
Hall
Sensor
Schmitt
Trigger
Amplifier
GND
Output
Driver
3
DOB
Over
Temperature
Protection
Figure 3. Functional Block Diagram of AH276
Ordering Information
AH276
E1: Lead Free
G1: Green
Circuit Type
Magnetic Characteristics
A: 10 to 50Gauss
B: 5 to 70Gauss
C: 100Gauss
Package
Z4: TO-94 (SIP-4L)
Package
TO-94
Temperature
Range
o
-20 to 85 C
Part Number
Lead Free
Marking ID
Green
Lead Free
Green
Packing
Type
AH276Z4-AE1
AH276Z4-AG1
AH276Z4-E1
AH276Z4-G1
Bulk
AH276Z4-BE1
AH276Z4-BG1
AH276Z4-E1
AH276Z4-G1
Bulk
AH276Z4-CE1
AH276Z4-CG1
AH276Z4-E1
AH276Z4-G1
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green package.
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Absolute Maximum Ratings (Note 1)
(TA=25oC)
Parameter
Symbol
Value
Unit
Supply Voltage
VCC
20
V
Reverse Protection Voltage
VRCC
-20
V
B
Unlimited
Gauss
350
mA
550
mA
750
mA
PD
550
mW
Die to atmosphere
θJA
227
Die to package case
θJC
49
TSTG
-50 to 150
Magnetic Flux Density
Continuous
Output Current
IO
Hold
Peak (start up)
Power Dissipation
Thermal Resistance
Storage Temperature
o
C/W
oC/W
o
C
ESD (Machine Model)
300
V
ESD (Human Body Model)
2500
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Recommended Operating Conditions
(TA=25oC)
Parameter
Supply Voltage
Ambient Temperature
Symbol
Min
Max
VCC
3.5
16
V
TA
-20
85
o
Nov. 2009 Rev. 1. 4
Unit
C
BCD Semiconductor Manufacturing Limited
4
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Electrical Characteristics
(TA=25oC, VCC=14V, unless otherwise specified)
Parameter
Symbol
VSAT
Output Saturation Voltage
Test Condition
Min
Typ
Max
VCC=3.5V, IO=100mA
0.3
IO=350mA
0.35
0.6
Unit
V
V
Output Leakage Current
IOL
VCE=16V
0.1
10
µA
Supply Current
ICC
VCC=16V, Output Open
12
16
mA
Output Rise Time
tr
RL=820Ω, CL=20pF
3.0
10
µs
Output Fall Time
tf
RL=820Ω, CL=20pF
0.3
1.5
µs
Switch Time Differential
∆t
RL=820Ω, CL=20pF
3.0
10
µs
Output Zener Breakdown Voltage
VZ
55
Thermal Protection Temperature
TSD
178
Thermal Protection Hysteresis
∆TSD
40
V
o
C
oC
Magnetic Characteristics
(TA=25oC)
Parameter
Symbol
BOP
Operating Point
Grade
Min
A
10
B
5
Typ
C
BRP
Releasing Point
Hysteresis
Max
Unit
50
Gauss
70
Gauss
100
Gauss
A
-50
-10
Gauss
B
-70
-5
Gauss
C
-100
Gauss
75
BHYS
Gauss
V DO (V)
Off-state
High
B HYS
Turn off
Turn on
Low
V SAT
On-state
N
B RP
S
B OP
0
Magnetic Flux Density (Gauss)
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
5
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Magnetic Characteristics (Continued)
+14V
AH276
S
VCC
Marking Side
DO DOB GND
1
2
4
3
DO (VOUT1)
R1
820Ω
R2
N
DOB (VOUT2)
820Ω
C1
C2
20pF 20pF
Figure 4. Basic Test Circuit
DO (V)
DOB (V)
16
16
VCC
14
14
12
12
10
10
8
8
6
6
4
4
2
-40
-20
0
VSAT
20
2
VSAT
40
-40
Magnetic Flux Density B (Gauss)
VCC
-20
0
20
40
Magnetic Flux Density B (Gauss)
Figure 5. VDO vs. Magnetic Flux Density
Figure 6. VDOB vs. Magnetic Flux Density
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Typical Performance Characteristics
14
100
13
80
12
60
BOP/BRP/BHYS (Gauss)
ICC (mA)
11
10
9
8
O
Ta=-25 C
O
Ta=-0 C
O
Ta=+25 C
O
Ta=+85 C
7
6
5
2
4
6
8
10
12
14
16
18
40
20
BOP
BRP
BHYS
0
-20
O
Ta=25 C
-40
-60
-80
20
4
6
8
10
VCC (V)
Figure 7. ICC vs. VCC
14
16
18
20
Figure 8. BOP/BRP/BHYS vs. VCC
800
75
50
600
25
0
PD (mW)
BOP/BRP/BHYS (Gauss)
12
VCC (V)
BOP
BRP
BHYS
-25
400
200
O
TA=+25 C
-50
-20
0
20
O
40
TA ( C)
60
0
-25
80
0
25
50
75
100
125
150
o
TA ( C)
Figure 9. BOP/BRP/BHYS vs. Ambient Temperature
Figure 10. PD vs. Ambient Temperature
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Typical Performance Characteristics (Continued)
6005
14
VCC=3.5V
VCC=14V
VCC=20V
IO=100mA
IO=200mA
IO=300mA
IO=350mA
IO=400mA
500
12
VSAT(mV)
ICC (mA)
400
10
300
8
200
6
100
-20
0
20
40
60
-20
80
0
20
O
40
60
80
O
TA ( C)
TA( C)
Figure 12. VSAT vs. Ambient Temperature
Figure 11. ICC vs. Ambient Temperature
Typical Applications
D1
AH276
VCC
DO
1
2
COIL1
COIL2
R1
470
R2
470
DOB GND
4
3
VCC
+
C1
2.2µF
+
C2
2.2µF
Figure 12. Typical Application Circuit
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
AH276
Mechanical Dimensions
TO-94
0.500(0.020)
0.700(0.028)
3.780(0.149)
4.080(0.161)
Unit: mm(inch)
45 °TYP
1.520(0.059)
1.720(0.067)
0.700(0.028)
0.900(0.035)
4.980(0.196)
5.280(0.208)
0.360(0.014)
0.510(0.020)
1.850(0.073)
1.250(0.050)
Package Sensor Location
(For Hall IC)
0.380(0.015)
0.550(0.022)
3.450(0.136)
3.750(0.148)
0.360(0.014)
0.500(0.020)
14.000(0.550)
15.300(0.602)
1.270(0.050) TYP
3.710(0.146)
3.910(0.154)
Nov. 2009 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
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