IRF IRHF57130 Simple drive requirement Datasheet

PD-93789F
IRHF57130
JANSR2N7493T2
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/701
5
Product Summary
TECHNOLOGY
™
Part Number
IRHF57130
IRHF53130
IRHF54130
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
0.08Ω
ID
11.7A
11.7A
11.7A
QPL Part Number
JANSR2N7493T2
JANSF2N7493T2
JANSG2N7493T2
IRHF58130
1000K Rads (Si)
0.10Ω
11.7A JANSH2N7493T2
TO-39
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TM
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Identical Pre- & Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
11.7
7.4
47
25
0.2
±20
173
11.7
2.5
4.9
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
C
g
For footnotes refer to the last page
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1
10/27/11
IRHF57130, JANSR2N7493T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
—
0.12
—
V/°C
—
—
0.08
Ω
2.0
8.7
—
—
—
—
—
—
4.0
—
10
25
V
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
7.4
20
25
100
35
30
—
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 7.4A Ã
nC
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 7.4A Ã
VDS= 80V ,VGS = 0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11.7A
VDS = 50V
ns
VDD = 50V, ID = 11.7A
VGS =12V, RG = 7.5Ω
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1038
362
45
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
11.7
47
1.5
202
850
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 11.7A, VGS = 0V Ã
Tj = 25°C, IF = 11.7A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
5.0
175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHF57130, JANSR2N7493T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-39)
Diode Forward Voltage Ã
Test Conditions
100
2.0
—
—
—
—
—
4.0
100
-100
10
0.064
100
1.5
—
—
—
—
—
4.0
100
-100
25
0.08
nA
µA
Ω
VGS = 0V, I D = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS = 0V
VGS = 12V, ID =7.4A
—
0.08
—
0.10
Ω
VGS = 12V, ID =7.4A
—
1.5
—
1.5
V
VGS = 0V, IS = 11.7A
V
1. Part numbers IRHF57130 (JANSR2N7493T2), IRHF53130 (JANSF2N7493T2) and IRHF54130 (JANSG2N7493T2)
2. Part number IRHF58130 (JANSH2N7493T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV)
(µm)
2
(MeV/(mg/cm ))
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
38 ± 7.5%
100
100
100
100
100
300 ± 7.5%
61 ± 5%
330 ± 7.5%
31 ± 10%
100
100
100
35
25
84 ± 5%
350 ± 10%
28 ± 7.5%
100
100
80
25
-
Bias VDS (V)
38 ± 5%
120
100
80
60
40
20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57130, JANSR2N7493T2
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
10
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15
50V
20µs PULSE WIDTH
9
11
13
15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
1
10
100
Fig 2. Typical Output Characteristics
1000
7
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
5.0V
10
1
0.1
VDS , Drain-to-Source Voltage (V)
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 11.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
C, Capacitance (pF)
IRHF57130, JANSR2N7493T2
Ciss
1200
Coss
800
400
Crss
0
1
10
ID = 11.7A
16
12
8
4
0
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
VDS , Drain-to-Source Voltage (V)
20
30
40
50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
TJ = 25 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
VDS = 80V
VDS = 50V
VDS = 20V
TJ = 150 ° C
10
1
0.1
0.0
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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3.5
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
100µs
1ms
1
10ms
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
DC
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHF57130, JANSR2N7493T2
Pre-Irradiation
12
RD
VDS
VGS
10
D.U.T.
ID , Drain Current (A)
RG
+
-V DD
8
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
VDS
2
0
90%
25
50
75
100
125
TC , Case Temperature ( °C)
150
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PDM
0.02
0.1
0.01
0.00001
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHF57130, JANSR2N7493T2
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
400
ID
5.2A
7.4A
BOTTOM 11.7A
TOP
320
240
160
80
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHF57130, JANSR2N7493T2
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 2.53 mH
Peak IL = 11.7A, VGS = 12V
 ISD ≤ 11.7A, di/dt ≤ 216A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 10/2011
8
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