PHILIPS BUK566-60H Powermos transistor logic level fet Datasheet

Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
PINNING - SOT404
PIN
BUK566-60H
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
VGS = 5 V
PIN CONFIGURATION
MAX.
UNIT
60
60
150
175
22
V
A
W
˚C
mΩ
SYMBOL
DESCRIPTION
d
mb
1
gate
2
drain
3
source
mb
drain
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
RGS = 20 kΩ
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
- 55
-
60
60
15
60
44
240
150
175
175
V
V
V
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
-
Rth j-a
August 1995
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
minimum footprint,
FR4 board (see Fig. 18).
1
TYP.
MAX.
UNIT
-
1.0
K/W
50
-
K/W
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK566-60H
STATIC CHARACTERISTICS
Tmb= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
MIN.
TYP.
MAX.
UNIT
VGS = 0 V; ID = 0.25 mA
60
-
-
V
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V;
VDS = 60 V; VGS = 0 V; Tj = 125 ˚C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A
1.0
-
1.5
1
0.1
10
18
2.0
10
1.0
100
22
V
µA
mA
nA
mΩ
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 25 A
17
30
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
2200
700
280
2800
1000
400
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Ω;
Rgen = 50 Ω
-
40
150
350
190
50
250
450
250
ns
ns
ns
ns
Ld
Internal drain inductance
-
2.5
-
nH
Ls
Internal source inductance
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
60
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 50 A; VGS = 0 V
-
1.1
240
2.0
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 50 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
80
0.4
-
ns
µC
MIN.
TYP.
MAX.
UNIT
-
-
150
mJ
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 50 A; VDD ≤ 25 V;
VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
August 1995
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
120
BUK566-60H
Normalised Power Derating
PD%
10
Zth j-mb / (K/W)
BUKx56-lv
110
100
90
D=
1
80
0.5
70
0.2
0.1
0.05
60
0.1
50
0.02
40
30
0.01
tp
PD
10
0
0
20
40
60
80 100
Tmb / C
120
140
160
ID / IDmax %
tp
T
t
T
0.001
180
1E-05
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
120
D=
0
20
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
150
ID / A
10
8
BUK5y6-60A
7
6
VGS / V =
100
80
100
5
4.5
60
4
40
50
3.5
20
3
2.5
0
0
20
40
60
80 100
Tmb / C
120
140
160
0
180
0
BUK556-60H
ID / A
S/
)=
0.1
ID
6
VDS / V
8
10
RDS(ON) / Ohm
3
12
BUK5y6-60A
3.5
4
4.5
5
6
0.08
VD
tp = 10 us
ON
100
4
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
1000
2
S(
RD
10
0.06
100 us
1 ms
0.04
10 ms
100 ms
0.02
DC
7
VGS / V = 10
0
1
1
0
100
10
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
August 1995
20
40
60
80
ID / A
100
120
140
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK566-60H
ID / A
150
VGS(TO) / V
BUK5y6-60A
max.
2
Tj / C = 25
150
100
typ.
min.
1
50
0
0
0
2
4
6
8
10
-60
-20
20
60
Tj / C
VGS / V
gfs / S
140
180
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
40
100
BUK5y6-60A
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
35
1E-02
30
25
2%
1E-03
98 %
typ
20
1E-04
15
10
1E-05
5
1E-06
0
0
20
40
60
80
100
0
0.4
0.8
1.2
VGS / V
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 15 V
2.0
a
1.6
2
2.4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
10000
C / pF
BUK5y6-60A
Ciss
1.5
1000
Coss
1.0
Crss
100
0.5
10
0
-60
-20
20
60
Tj / C
100
140
0
180
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
August 1995
20
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
10
BUK566-60H
VGS / V
BUK5y6-60A
120
WDSS%
110
9
VDS / V =12
8
100
48
90
7
80
6
70
5
60
4
50
40
3
30
2
20
1
10
0
0
0
20
40
QG / nC
60
20
80
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS
200
IF / A
40
80
100
120
Tmb / C
140
160
180
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 50 A
BUK5y6-60A
VDD
+
150
L
Tj / C = 25
150
60
VDS
-
VGS
100
-ID/100
T.U.T.
0
50
RGS
R 01
shunt
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSDS / V
2
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1995
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK566-60H
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
Net Mass: 1.4 g
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
Fig.17. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.18. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
August 1995
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK566-60H
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1995
7
Rev 1.000
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