Diode Semiconductor Korea MBR6030PT - - - MBR60100PT VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A SCHOTTKY BARRIER RECTIFIERS FEATURES TO-3P(TO-247AD) 15.8± 0.2 6.5± 0.3 For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 5.0± 0.15 8.0± 0.2 4.9± 0.25 High s urge capacity. 2.0± 0.15 Metal s ilicon junction, m ajority carrier conduction. 21± 0.5 High current capacity, low forward voltage drop. Guard ring for over voltage protection. φ3 .6± 0.15 PIN 1 MECHANICAL DATA 2 3 2.4± 0.2 20.4± 0.4 Cas e:JEDEC TO-3P,m olded plas tic body Term inals :Solderable per MIL-STD-750, 2.2± 0.15 3.0± 0.1 1.2± 0.15 1 1 Method 2026 Polarity: As m arked 0.6± 0.1 5.4± 0.15 Pos ition: Any Weight: 0.223 ounce, 6.3 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBR MBR MBR MBR MBR MBR MBR MBR UNITS 6030PT 6035PT 6040PT 6045PT 6050PT 6060PT 6080PT 60100PT Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 80 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 56 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 80 100 V Maximum average forw ard total device m rectified current @TC = 105°C IF(AV) 60 A IFSM 500 A Peak forw ard surge current 8.3ms single half sine-wave superimposed on rated load Maximum forward voltage @ I F =30A,T C =25 ℃ Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 Maximum thermal resistance (Note2) Operating junction temperature range Storage temperature range NOTE: 1. Thermal resistance from junction to case. VF IR 0.62 0.75 0.85 V 20 mA 200 RθJC 1.4 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 /W www.diode.kr MBR6030PT - - - MBR60100PT Diode Semiconductor Korea FIG.2 -- FORWARD DERATING CURVE 400 8.3ms Single Half Sine Wave TJ=125 300 200 100 0 1 10 100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 500 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 60 30 0 25 50 NUMBER OF CYCLES AT 60HZ 10 MBR6030PT~MBR6045PT MBR6050PT~MBR6060PT MBR6080PT~MBR60100PT 0.7 0.8 0.9 1.0 1.1 125 150 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 30 AMPERES INSTANTANEOUS FORWARD CURRENT, 100 0.5 0.6 100 CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 1.0 0.4 75 100000 10000 1000 TA =100°C 100 TA=25°C 10 1.0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr