TI DS90LV019MWC Ds90lv019 3.3v or 5v lvds driver/receiver Datasheet

DS90LV019
DS90LV019 3.3V or 5V LVDS Driver/Receiver
Literature Number: SNLS008B
DS90LV019
3.3V or 5V LVDS Driver/Receiver
General Description
Features
The DS90LV019 is a Driver/Receiver designed specifically
for the high speed low power point-to-point interconnect applications. The device operates from a single 3.3V or 5.0V
power supply and includes one differential line driver and
one receiver. The DS90LV019 features an independent
driver and receiver with TTL/CMOS compatibility (DIN and
ROUT). The logic interface provides maximum flexibility as 4
separate lines are provided (DIN, DE, RE, and ROUT). The
device also features a flow-through pin out which allows
easy PCB routing for short stubs between its pins and the
connector. The driver has 3.5 mA output loop current.
The driver translates between TTL levels (single-ended) to
Low Voltage Differential Signaling levels. This allows for high
speed operation, while consuming minimal power with reduced EMI. In addition, the differential signaling provides
common-mode noise rejection.
The receiver threshold is ± 100 mV over a ± 1V commonmode range and translates the low swing differential levels
to standard (TTL/CMOS) levels.
n
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n
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n
n
LVDS Signaling
3.3V or 5.0V operation
Low power CMOS design
Balanced Output Impedance
Glitch free power up/down (Driver disabled)
High Signaling Rate Capacity (above 100 Mbps)
Ultra Low Power Dissipation
± 1V Common-Mode Range
± 100 mV Receiver Sensitivity
Product offered in SOIC and TSSOP packages
Flow-Through Pin Out
Industrial Temperature Range Operation
Connection Diagram
DS100053-1
Order Number DS90LV019TM or DS90LV019TMTC
See NS Package Number M14A or MTC14
Block Diagram
DS100053-2
TRI-STATE ® is a registered trademark of National Semiconductor Corporation.
© 2000 National Semiconductor Corporation
DS100053
www.national.com
DS90LV019 3.3V or 5V LVDS Driver/Receiver
August 2000
DS90LV019
Absolute Maximum Ratings (Note 1)
Derate SOIC Package
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
TSSOP
Supply Voltage VCC
−0.3V to (VCC + 0.3V)
Receiver Output Voltage
(ROUT)
−0.3V to (VCC + 0.3V)
Driver Output Voltage (DO ± )
−0.3V to +3.9V
Receiver Input Voltage (RI ± )
−0.3V to (VCC + 0.3V)
Driver Short Circuit Current
260˚C
Recommended Operating
Conditions
ESD (Note 4)
> 2.0 kV
> 200 V
(EIAJ, 0 Ω, 200 pF)
−65˚C to +150˚C
Lead Temperature
(Soldering, 4 sec.)
Continuous
(HBM, 1.5 kΩ, 100 pF)
6.3mW/˚C
Storage Temperature Range
−0.3V to (VCC +0.3V)
Driver Input Voltage (DIN)
790 mW
Derate TSSOP Package
6.0V
Enable Input Voltage (DE, RE)
7.7mW/˚C
Min
Max
Units
Supply Voltage (VCC) or
3.0
3.6
V
Supply Voltage (VCC)
4.5
5.5
V
Receiver Input Voltage
0.0
2.4
V
Operating Free Air
Temperature TA
−40
+85
˚C
Units
Maximum Package Power Dissipation at 25˚C
SOIC
960 mW
DC Electrical Characteristics
TA = −40˚C to +85˚C unless otherwise noted, VCC = 3.3 ± 0.3V. (Notes 2, 3)
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
DO+,
DO−
250
350
450
mV
6
60
mV
1
1.25
1.7
V
5
60
mV
+10
µA
+10
µA
−4
mA
DIFFERENTIAL DRIVER CHARACTERISTICS
RL = 100Ω (Figure 1)
VOD
Output Differential Voltage
∆VOD
VOD Magnitude Change
VOS
Offset Voltage
∆VOS
Offset Magnitude Change
IOZD
TRI-STATE ® Leakage
VOUT = VCC or GND, DE = 0V
−10
IOXD
Power-Off Leakage
VOUT = 3.6V or GND, VCC = 0V
−10
±1
±1
IOSD
Output Short Circuit Current
VOUT = 0V, DE = VCC
−10
−6
2.9
3.3
V
2.9
3.3
V
0.1
0.4
V
−75
−34
−20
mA
+100
mV
DIFFERENTIAL RECEIVER CHARACTERISTICS
VOH
Voltage Output High
VID = +100 mV
IOH = −400 µA
ROUT
Inputs Open
VOL
Voltage Output Low
IOL = 2.0 mA, VID = −100 mV
IOS
Output Short Circuit Current
VOUT = 0V
VTH
Input Threshold High
VTH
Input Threshold Low
IIN
Input Current
RI+,
RI−
VIN = +2.4V or 0V, VCC = 3.6V or
0V
−100
−10
mV
±1
+10
µA
VCC
V
DEVICE CHARACTERISTICS
VIH
Minimum Input High Voltage
DIN,
DE, RE
VIL
Maximum Input Low Voltage
IIH
Input High Current
VIN = VCC or 2.4V
IIL
Input Low Current
VIN = GND or 0.4V
VCL
Input Diode Clamp Voltage
ICLAMP = −18 mA
ICCD
Power Supply Current
2.0
GND
±1
±1
−1.5
VCC
V
µA
−0.7
µA
V
9
12.5
mA
ICCR
DE = RE = 0V
4.5
7.0
mA
ICCZ
DE = 0V, RE = VCC
3.7
7.0
mA
15
20
mA
ICC
DE = RE = VCC
0.8
± 10
± 10
DE = VCC, RE = 0V
CD output
Capacitance
DO+,
DO−
5
pF
CR input
Capacitance
RI+,
RI−
5
pF
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2
Symbol
Parameter
Conditions
Pin
Min
Typ
Max
Units
DO+,
DO−
250
360
450
mV
6
60
mV
1
1.25
1.8
V
5
60
mV
+10
µA
+10
µA
−4
mA
DIFFERENTIAL DRIVER CHARACTERISTICS
VOD
Output Differential Voltage
∆VOD
VOD Magnitude Change
VOS
Offset Voltage
∆VOS
Offset Magnitude Change
IOZD
TRI-STATE Leakage
IOXD
IOSD
R
L
= 100Ω (Figure 1)
VOUT = VCC or GND, DE = 0V
−10
Power-Off Leakage
VOUT = 5.5V or GND, VCC = 0V
−10
±1
±1
Output Short Circuit Current
VOUT = 0V, DE = VCC
−10
−6
4.3
5.0
4.3
5.0
DIFFERENTIAL RECEIVER CHARACTERISTICS
VOH
Voltage High
VID = +100 mV
IOH = −400 µA
ROUT
Inputs Open
VOL
Voltage Output Low
IOL = 2.0 mA, VID = −100 mV
IOS
Output Short Circuit Current
VOUT = 0V
VTH
Input Threshold High
VTH
Input Threshold Low
IIN
Input Current
−150
RI+,
RI−
V
V
0.1
0.4
V
−75
−40
mA
+100
mV
−100
VIN = +2.4V or 0V, VCC = 5.5V or
0V
mV
±1
−15
+15
µA
DEVICE CHARACTERISTICS
VIH
Minimum Input High Voltage
VIL
Maximum Input Low Voltage
IIH
Input High Current
VIN = VCC or 2.4 V
IIL
Input Low Current
VIN = GND or 0.4V
VCL
Input Diode Clamp Voltage
ICLAMP = −18 mA
ICCD
Power Supply Current
DE = RE = VCC
DIN,
DE ,RE
2.0
VCC
V
GND
0.8
V
± 10
± 10
µA
12
19
mA
±1
±1
−1.5
−0.8
VCC
µA
V
ICCR
DE = RE = 0V
5.8
8
mA
ICCZ
DE = 0V, RE = VCC
4.5
8.5
mA
ICC
DE = VCC, RE = 0V
18
48
mA
CD output
Capacitance
DO+,
DO−
5
pF
CR input
Capacitance
RI+,
RI−
5
pF
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should
be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground unless otherwise specified.
Note 3: All typicals are given for VCC = +3.3V or +5.0V and TA = +25˚C, unless otherwise stated.
Note 4: ESD Rating:
> 2.0 kV
> 200V.
HBM (1.5 kΩ, 100 pF)
EIAJ (0Ω, 200 pF)
Note 5: CL includes probe and fixture capacitance.
Note 6: Generator waveforms for all tests unless otherwise specified; f = 1 MHz, ZO = 50Ω, tr = tf ≤ 6.0 ns (0%–100%).
AC Electrical Characteristics
TA = −40˚C to +85˚C, VCC = 3.3V ± 0.3V. (Note 6)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
RL = 100Ω,
CL = 10 pF
(Figure 2 and Figure 3)
2.0
4.0
6.5
ns
1.0
5.6
7.0
ns
0.4
1.0
ns
DRIVER TIMING REQUIREMENTS
tPHLD
Differential Propagation Delay High to Low
tPLHD
Differential Propagation Delay Low to High
tSKD
Differential Skew |tPHLD − tPLHD|
tTLH
Transition Time Low to High
0.2
0.7
3.0
ns
tTHL
Transition Time High to Low
0.2
0.8
3.0
ns
3
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DS90LV019
DC Electrical Characteristics
TA = −40˚C to +85˚C unless otherwise noted, VCC = 5.0 ± 0.5V. (Notes 2, 3)
DS90LV019
AC Electrical Characteristics
(Continued)
TA = −40˚C to +85˚C, VCC = 3.3V ± 0.3V. (Note 6)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
RL = 100Ω,
CL = 10 pF
(Figure 4 and Figure 5)
1.5
4.0
8.0
ns
DRIVER TIMING REQUIREMENTS
tPHZ
Disable Time High to Z
tPLZ
Disable Time Low to Z
tPZH
Enable Time Z to High
tPZL
Enable Time Z to Low
2.5
5.3
9.0
ns
4.0
6.0
8.0
ns
3.5
6.0
8.0
ns
3.0
5.8
7.0
ns
3.0
5.6
9.0
ns
0.55
1.5
ns
RECEIVER TIMING REQUIREMENTS
tPHLD
Differential Propagation Delay High to Low
tPLHD
Differential Propagation Delay Low to High
tSKD
Differential Skew |tPHLD − tPLHD|
CL = 10 pF,
VID = 200 mV
(Figure 6 and Figure 7)
tr
Rise Time
0.15
2.0
3.0
ns
tf
Fall Time
0.15
0.9
3.0
ns
tPHZ
Disable Time High to Z
3.0
4.0
6.0
ns
tPLZ
Disable Time Low to Z
tPZH
Enable Time Z to High
tPZL
Enable Time Z to Low
RL = 500Ω,
CL = 10 pF
(Figure 8 and Figure 9)
3.0
4.5
6.0
ns
3.0
6.0
8.0
ns
3.0
6.0
8.0
ns
Conditions
Min
Typ
Max
Units
RL = 100Ω,
CL = 10 pF
(Figure 2 and Figure 3)
2.0
3.3
6.0
ns
AC Electrical Characteristics
TA = −40˚C to +85˚C, VCC = 5.0V ± 0.5V. (Note 6)
Symbol
Parameter
DRIVER TIMING REQUIREMENTS
tPHLD
Differential Propagation Delay High to Low
tPLHD
Differential Propagation Delay Low to High
tSKD
Differential Skew |tPHLD − tPLHD|
tTLH
Transition Time Low to High
tTHL
Transition Time High to Low
tPHZ
Disable Time High to Z
tPLZ
Disable Time Low to Z
tPZH
Enable Time Z to High
tPZL
Enable Time Z to Low
1.0
0.15
RL = 100Ω,
CL = 10 pF
(Figure 4 and Figure 5)
3.3
5.0
ns
0.6
1.0
ns
0.9
3.0
ns
0.15
1.2
3.0
ns
1.5
3.5
7.0
ns
3.0
5.2
9.0
ns
2.0
4.5
7.0
ns
2.0
4.5
7.0
ns
3.0
6.0
8.0
ns
RECEIVER TIMING REQUIREMENTS
tPHLD
Differential Propagation Delay High to Low
tPLHD
Differential Propagation Delay Low to High
tSKD
Differential Skew |tPHLD − tPLHD|
tr
Rise Time
tf
Fall Time
tPHZ
Disable Time High to Z
tPLZ
Disable Time Low to Z
tPZH
Enable Time Z to High
tPZL
Enable Time Z to Low
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CL = 10 pF,
VID = 200 mV
(Figure 6 and Figure 7)
RL = 500Ω,
CL = 10 pF
(Figure 8 and Figure 9)
4
3.0
5.6
8.0
ns
0.7
1.6
ns
0.15
0.8
3.0
ns
0.15
0.8
3.0
ns
3.0
3.5
4.5
ns
3.5
3.6
7.0
ns
3.0
5.0
7.0
ns
3.0
5.0
7.0
ns
DS90LV019
Test Circuits and Timing Waveforms
DS100053-3
FIGURE 1. Differential Driver DC Test Circuit
DS100053-4
FIGURE 2. Differential Driver Propagation Delay and Transition Test Circuit
DS100053-5
FIGURE 3. Differential Driver Propagation and Transition Time Waveforms
DS100053-6
FIGURE 4. Driver TRI-STATE Delay Test Circuit
5
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DS90LV019
Test Circuits and Timing Waveforms
(Continued)
DS100053-7
FIGURE 5. Driver TRI-STATE Delay Waveforms
DS100053-8
FIGURE 6. Receiver Propagation Delay and Transition Time Test Circuit
DS100053-9
FIGURE 7. Receiver Propagation Delay and Transition Time Waveforms
DS100053-10
FIGURE 8. Receiver TRI-STATE Delay Test Circuit
www.national.com
6
DS90LV019
Test Circuits and Timing Waveforms
(Continued)
DS100053-11
FIGURE 9. Receiver TRI-STATE Delay Waveforms TRI-STATE Delay Waveforms
DS100053-13
FIGURE 10. Terminated Input Fail-Safe Circuit
Typical Application Diagram
DS100053-12
and 0.01 µF in parallel should be used between each VCC
and ground. The capacitors should be as close as possible to the VCC pin.
Applications Information
The DS90LV019 has two control pins, which allows the device to operate as a driver, a receiver or both driver and a receiver at the same time. There are a few common practices
which should be implied when designing PCB for LVDS signaling. Recommended practices are:
•
Use at least 4 PCB board layer (LVDS signals, ground,
power and TTL signals).
•
Keep drivers and receivers as close to the (LVDS port
side) connector as possible.
•
Bypass each LVDS device and also use distributed bulk
capacitance. Surface mount capacitors placed close to
power and ground pins work best. Two or three multilayer ceramic (MLC) surface mount capacitors 0.1 µF,
•
Use controlled impedance traces which match the differential impedance of your transmission medium (i.e.,
Cable) and termination resistor.
•
Use the termination resistor which best matches the differential impedance of your transmission line.
•
Isolate TTL signals from LVDS signals.
MEDIA (CABLE AND CONNECTOR) SELECTION:
•
7
Use controlled impedance media. The cables and connectors should have a matched differential impedance of
about 100Ω.
www.national.com
DS90LV019
Applications Information
•
(Continued)
•
Balanced cables (e.g., twisted pair) are usually better
than unbalanced cables (ribbon cable, simple coax) for
noise reduction and signal quality.
•
For cable distances < 0.5m, most cables can be made to
work effectively. For distances 0.5m ≤ d ≤ 10m, CAT 3
(category 3) twisted pair cable works well and is readily
available and relatively inexpensive. For distances
> 10m, and high data rates CAT 5 twisted pair is recommended.
There are three Fail-Safe scenarios, open input pins,
shorted inputs pins and terminated input pins. The first
case is guaranteed for DS90LV019. A HIGH state on
ROUT pin can be achieved by using two external resistors
(one to VCC and one to GND) per Figure 10 (Terminated
Input Fail-Safe Circuit). R1 and R2 should be RT to limit
the loading to the LVDS driver . RT is selected to match
the impedance of the cable.
TABLE 1. Functional Table
MODE SELECTED
DE
RE
DRIVER MODE
H
H
RECEIVER MODE
L
L
TRI-STATE MODE
L
H
FULL DUPLEX MODE
H
L
TABLE 2. Transmitter Mode
INPUTS
TABLE 3. Receiver Mode
OUTPUTS
INPUTS
OUTPUT
DE
DI
DO+
DO−
RE
(RI+) − (RI−)
H
L
L
H
L
L ( < −100 mV)
L
H
H
H
L
L
H ( > +100 mV)
H
H
2 > & > 0.8
X
X
L
100 mV > & > −100 mV
X
L
X
Z
Z
H
X
Z
X = High or Low logic state
Z = High impedance state
L = Low state
H = High state
X = High or Low logic state
Z = High impedance state
L = Low state
H = High state
TABLE 4. Device Pin Description
Pin Name
Pin #
Input/Output
DIN
2
I
TTL Driver Input
DO ±
11, 12
O
LVDS Driver Outputs
RI ±
9, 10
I
LVDS Receiver Inputs
ROUT
4
O
TTL Receiver Output
RE
8
I
Receiver Enable TTL Input (Active Low)
DE
1
I
GND
7
NA
Ground
VCC
14
NA
Power Supply (3.3V ± 0.3V or 5.0V ± 0.5V)
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Description
Driver Enable TTL Input (Active High)
8
DS90LV019
Physical Dimensions
inches (millimeters) unless otherwise noted
Order Number DS90LV019TM
NS Package Number M14A
9
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DS90LV019 3.3V or 5V LVDS Driver/Receiver
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
Order Number DS90LV019TMTC
NS Package Number MTC14
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