BAS16 series High-speed switching diodes Rev. 05 — 25 August 2008 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Package configuration NXP JEITA JEDEC BAS16 SOT23 - TO-236AB single small BAS16H SOD123F - - single small and flat lead BAS16J SOD323F SC-90 - single very small and flat lead BAS16L SOD882 - - single leadless ultra small BAS16T SOT416 SC-75 - single ultra small BAS16VV SOT666 - - triple isolated ultra small and flat lead BAS16VY SOT363 SC-88 - triple isolated very small BAS16W SOT323 SC-70 - single very small BAS316 SOD323 SC-76 - single very small BAS516 SOD523 SC-79 - single ultra small and flat lead 1.2 Features n High switching speed: trr ≤ 4 ns n Low leakage current n Repetitive peak reverse voltage: VRRM ≤ 100 V 1.3 Applications n High-speed switching n General-purpose switching n Low capacitance n Reverse voltage: VR ≤ 100 V n Small SMD plastic packages BAS16 series NXP Semiconductors High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 100 V Per diode VR reverse voltage IR reverse current trr reverse recovery time [1] VR = 80 V [1] - - 0.5 µA - - 4 ns When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 2. Pinning information Table 3. Pin Pinning Description Simplified outline Graphic symbol BAS16; BAS16T; BAS16W 1 anode 2 not connected 3 cathode 3 3 1 2 006aaa764 1 2 006aaa144 BAS16H; BAS16J; BAS316; BAS516 1 cathode 2 anode [1] 1 2 2 1 006aab040 001aab540 BAS16L 1 cathode 2 anode [1] 1 2 1 2 006aab040 Transparent top view BAS16VV; BAS16VY 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) 6 5 1 2 4 6 5 1 2 4 3 001aab555 3 006aab106 [1] The marking bar indicates the cathode. BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 2 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS16 - plastic surface-mounted package; 3 leads SOT23 BAS16H - plastic surface-mounted package; 2 leads SOD123F BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F BAS16L - leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm SOD882 BAS16T SC-75 plastic surface-mounted package; 3 leads SOT416 BAS16VV - plastic surface-mounted package; 6 leads SOT666 BAS16VY SC-88 plastic surface-mounted package; 6 leads SOT363 BAS16W SC-70 plastic surface-mounted package; 3 leads SOT323 BAS316 SC-76 plastic surface-mounted package; 2 leads SOD323 BAS516 SC-79 plastic surface-mounted package; 2 leads SOD523 4. Marking Table 5. Marking codes Type number Marking code[1] BAS16 A6* BAS16H A1 BAS16J AR BAS16L S2 BAS16T A6 BAS16VV 53 BAS16VY 16* BAS16W A6* BAS316 A6 BAS516 6 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 3 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 100 V IF forward current BAS16 [1] - 215 mA BAS16H BAS16L [2] - 215 mA BAS16T [1] - 155 mA [1][3] - 200 mA BAS16W [1] - 175 mA BAS16J BAS316 BAS516 [1] - 250 mA - 500 mA tp = 1 µs - 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A BAS16VV BAS16VY IFRM repetitive peak forward current tp ≤ 0.5 µs; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave Ptot [4] total power dissipation BAS16 Tamb ≤ 25 °C [1] - 250 mW BAS16H Tamb ≤ 25 °C [2][5] - 380 mW - 830 mW - 550 mW - 250 mW [1] - 170 mW [1][3] - 180 mW - 250 mW [1] - 200 mW - 400 mW - 500 mW [6] [5][6] [7] BAS16J Tamb ≤ 25 °C [5][6] [7] BAS16L Tamb ≤ 25 °C [2][5] [6] BAS16T Tsp ≤ 90 °C BAS16VV Tamb ≤ 25 °C [5][8] BAS16VY Tsp ≤ 85 °C [1][3] [8] BAS16W Tamb ≤ 25 °C BAS316 Tsp ≤ 90 °C [1][6] BAS516 Tsp ≤ 90 °C [1][5] [6] BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 4 of 20 BAS16 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 µm copper strip line. [3] Single diode loaded. [4] Tj = 25 °C prior to surge. [5] Reflow soldering is the only recommended soldering method. [6] Soldering point of cathode tab. [7] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [8] Soldering points at pins 4, 5 and 6. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 500 K/W [2][3] - - 330 K/W [3][4] - - 150 K/W BAS16J [3][4] - - 230 K/W BAS16L [2][3] - - 500 K/W BAS16VV [2][3] - - 700 K/W - - 410 K/W - - 625 K/W BAS16 - - 330 K/W BAS16W - - 300 K/W BAS16 BAS16H [5] [3][4] [5] BAS16W Rth(j-t) thermal resistance from junction to tie-point BAS16_SER_5 Product data sheet [1] © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 5 of 20 BAS16 series NXP Semiconductors High-speed switching diodes Table 7. Thermal characteristics …continued Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions BAS16H [6] BAS16J [6] Min Typ Max Unit - - 70 K/W - - 55 K/W - - 350 K/W [5][7] - - 260 K/W BAS316 [6] - - 150 K/W BAS516 [6] - - 120 K/W BAS16T BAS16VY [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60 µm copper strip line. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Single diode loaded. [6] Soldering point of cathode tab. [7] Soldering points at pins 4, 5 and 6. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V IF = 150 mA - - 1.25 V Per diode VF IR Cd [1] forward voltage reverse current diode capacitance VR = 25 V - - 30 nA VR = 80 V - - 0.5 µA VR = 25 V; Tj = 150 °C - - 30 µA VR = 80 V; Tj = 150 °C - - 50 µA - - 1.5 pF f = 1 MHz; VR = 0 V BAS16; BAS16H; BAS16J; BAS16L; BAS16T; BAS16VV; BAS16VY; BAS16W; BAS316 BAS516 trr VFR - - 1 pF reverse recovery time [2] - - 4 ns forward recovery voltage [3] - - 1.75 V [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr = 20 ns. BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 6 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0 0.2 0.4 0.6 0.8 1.0 1 1.2 1.4 VF (V) 10 102 103 104 tp (µs) (1) Tamb = 150 °C Based on square wave currents. (2) Tamb = 85 °C Tj = 25 °C; prior to surge (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. 006aab133 102 IR (µA) 10 (1) 1 (2) Non-repetitive peak forward current as a function of pulse duration; maximum values mbg446 0.8 Cd (pF) 0.6 10−1 0.4 (3) 10−2 10−3 0.2 10−4 (4) 10−5 0 0 20 40 60 80 0 100 4 8 VR (V) (1) Tamb = 150 °C 12 VR (V) 16 f = 1 MHz; Tamb = 25 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (4) Tamb = −40 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 7 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 450 Ω 1 kΩ RS = 50 Ω I V 90 % OSCILLOSCOPE D.U.T. VFR Ri = 50 Ω 10 % t t tp tr input signal output signal mga882 Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms 9. Package outline 3.0 2.8 1.7 1.5 1.1 0.9 1.2 1.0 1 3 0.55 0.35 0.45 0.15 2.5 1.4 2.1 1.2 3.6 3.4 1 2 1.9 Dimensions in mm Fig 7. 0.48 0.38 2 0.15 0.09 04-11-04 Package outline BAS16 (SOT23/TO-236AB) 0.70 0.55 0.25 0.10 Dimensions in mm Fig 8. 04-11-29 Package outline BAS16H (SOD123F) BAS16_SER_5 Product data sheet 2.7 2.5 © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 8 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 1.35 1.15 0.80 0.65 1 2 0.30 0.22 2.7 2.3 0.50 0.46 0.62 0.55 0.5 0.3 1.8 1.6 1.02 0.95 0.65 0.30 0.22 1 2 Dimensions in mm Fig 9. 0.55 0.47 0.25 0.10 0.40 0.25 04-09-13 Package outline BAS16J (SOD323F/SC-90) Dimensions in mm 03-04-17 Fig 10. Package outline BAS16L (SOD882) 1.7 1.5 0.95 0.60 1.8 1.4 3 cathode marking on top side 6 0.45 0.15 0.6 0.5 5 4 0.3 0.1 1.75 0.9 1.45 0.7 1.7 1.5 1.3 1.1 pin 1 index 1 2 1 0.30 0.15 0.25 0.10 1 04-11-04 Fig 11. Package outline BAS16T (SOT416/SC-75) 2.2 1.8 2.2 1.35 2.0 1.15 Fig 12. Package outline BAS16VV (SOT666) 0.45 0.15 4 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 2 1 3 0.3 0.2 2 0.4 0.3 0.25 0.10 Dimensions in mm Fig 13. Package outline BAS16VY (SOT363) 0.25 0.10 1.3 1.3 06-03-16 Dimensions in mm 04-11-04 Fig 14. Package outline BAS16W (SOT323/SC-70) BAS16_SER_5 Product data sheet 04-11-08 2.2 1.8 pin 1 index 0.65 0.18 0.08 0.27 0.17 Dimensions in mm 1.1 0.8 5 1 3 1 Dimensions in mm 6 2 0.5 © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 9 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 1.35 1.15 0.65 0.58 0.45 0.15 1 2.7 2.3 0.85 0.75 1.1 0.8 1 1.65 1.25 1.55 1.15 1.8 1.6 2 2 0.40 0.25 0.25 0.10 Dimensions in mm 0.34 0.26 03-12-17 Fig 15. Package outline BAS316 (SOD323/SC-76) 0.17 0.11 Dimensions in mm 02-12-13 Fig 16. Package outline BAS516 (SOD523/SC-79) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 BAS16 SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235 BAS16H SOD123F 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16J SOD323F 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16L SOD882 2 mm pitch, 8 mm tape and reel - - - -315 BAS16T SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS16VV SOT666 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 BAS16VY SOT363 BAS16W SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS316 SOD323 4 mm pitch, 8 mm tape and reel -115 - - -135 BAS516 SOD523 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel -115 - - -135 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 10 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 11 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Reflow soldering is the only recommended soldering method. Fig 20. Reflow soldering footprint BAS16J (SOD323F) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 12 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 1.3 R0.05 (8×) 0.7 solder lands solder resist 0.6 0.7 (2×) (2×) 0.9 solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) sod882_fr Reflow soldering is the only recommended soldering method. Fig 21. Reflow soldering footprint BAS16L (SOD882) 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 13 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) placement area 0.55 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Reflow soldering is the only recommended soldering method. Fig 23. Reflow soldering footprint BAS16VV (SOT666) 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 14 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 15 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 0.5 (2×) 0.6 (2×) Dimensions in mm sod323_fr Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 16 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 5 2.9 1.5 (2×) solder lands solder resist occupied area 1.2 2.75 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) 2.15 1.1 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area 0.7 (2×) 0.8 (2×) Dimensions in mm sod523_fr Reflow soldering is the only recommended soldering method. Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79) BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 17 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS16_SER_5 20080825 Product data sheet - BAS16_4 BAS16H_1 BAS16J_1 BAS16L_1 BAS16T_1 BAS16VV_BAS16VY_3 BAS16W_4 BAS316_4 BAS516_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. Table 5 “Marking codes”: marking code amended for BAS16W Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of VRRM maximum value from 85 V to 100 V • Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of VR maximum value from 75 V to 100 V • • Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 25 °C • • Table 8 “Characteristics”: change of IR maximum value from 1.0 µA to 0.5 µA for VR = 80 V and Tj = 25 °C Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj = 150 °C Section 13 “Legal information”: updated BAS16_4 20011010 Product specification - BAS16_3 BAS16H_1 20050415 Product data sheet - - BAS16J_1 20070308 Product data sheet - - BAS16L_1 20030623 Product specification - - BAS16T_1 19980120 Product specification - - BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2 BAS16W_4 19990506 Product specification - BAS16W_3 BAS316_4 20040204 Product specification - BAS316_3 BAS516_1 19980831 Product specification - - BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 18 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BAS16_SER_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 25 August 2008 19 of 20 BAS16 series NXP Semiconductors High-speed switching diodes 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 25 August 2008 Document identifier: BAS16_SER_5