APT50M65JLL
500V 58A 0.065Ω
POWER MOS 7
R
MOSFET
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
2
T-
D
G
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M65JLL
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
58
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
232
-55 to 150
°C
300
Amps
58
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 29A)
TYP
MAX
Volts
0.065
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
12-2003
Characteristic / Test Conditions
050-7019 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M65JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1390
Reverse Transfer Capacitance
f = 1 MHz
87
VGS = 10V
141
VDD = 250V
40
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 67A @ 25°C
td(off)
tf
28
VDD = 250V
ID = 67A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
30
INDUCTIVE SWITCHING @ 25°C
6
1035
VDD = 333V, VGS = 15V
ID = 67A, RG = 3Ω
845
INDUCTIVE SWITCHING @ 125°C
6
ns
29
RG = 0.6Ω
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
70
RESISTIVE SWITCHING
Rise Time
UNIT
7010
VGS = 0V
3
MAX
µJ
1556
VDD = 333V, VGS = 15V
ID = 67A, RG = 3Ω
1013
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
58
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -67A, dl S /dt = 100A/µs)
680
ns
Q
Reverse Recovery Charge (IS = -67A, dl S/dt = 100A/µs)
17.0
µC
rr
dv/
dt
Peak Diode Recovery
dv/
232
(Body Diode)
1.3
(VGS = 0V, IS = - 67A)
dt
5
Amps
Volts
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -58A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7019 Rev D
12-2003
0.25
0.10
0.3
t1
t2
0.05
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT50M65JLL
180
Junction
temp. ( ”C)
0.0528
Power
(Watts)
0.0651
0.123
0.0203F
0.173F
0.490F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Case temperature
15 &10V
160
8V
140
120
7V
100
80
6.5V
60
6V
40
5.5V
20
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
140
120
100
80
60
TJ = +125°C
40
TJ = +25°C
20
0
TJ = -55°C
0
1
2
3
4
5
6
7
8
9
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
GS
1.3
1.2
1.1
VGS=10V
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50
60
70
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.05
1.00
0.95
0.90
0.85
-50
1.2
2.5
I
D
V
= 29A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
NORMALIZED TO
V
= 10V @ 29A
1.15
60
0
1.4
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
12-2003
160
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7019 Rev D
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
OPERATION HERE
LIMITED BY RDS (ON)
100
10,000
100µS
10
1mS
16
= 67A
12
100
Crss
VDS=100V
VDS=250V
VDS=400V
8
4
0
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1,000
10
1
I
Ciss
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
0
APT50M65JLL
30,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
232
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
80
V
td(off)
70
= 333V
DD
R
140
G
= 3Ω
T = 125°C
tf
J
120
V
50
DD
R
G
= 3Ω
T = 125°C
J
40
L = 100µH
30
20
30
50
70
90
V
DD
R
G
tr
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
= 333V
I
T = 125°C
J
Eon
L = 100µH
EON includes
diode reverse recovery.
1500
1000
500
30
V
= 3Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
12-2003
050-7019 Rev D
60
0
10
110
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
80
20
0
10
2500
100
40
td(on)
10
3000
L = 100µH
= 333V
tr and tf (ns)
td(on) and td(off) (ns)
60
DD
D
50
= 333V
= 67A
Eoff
T = 125°C
J
4000
L = 100µH
E ON includes
diode reverse recovery.
3000
2000
Eon
1000
Eoff
0
10
0
30
50
70
90
110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M65JLL
90%
Gate Voltage
10 %
Gate Voltage
T = 125 C
J
TJ = 125 C
td(off)
td(on)
tr
Drain Voltage
Drain Current
90%
90%
5%
10%
10 %
Drain Voltage
tf
Switching Energy
Switching Energy
0
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
12-2003
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7019 Rev D
7.8 (.307)
8.2 (.322)