ON MMBD701LT1G Silicon hot-carrier diode Datasheet

MBD701,
MMBD701L,
SMMBD701L
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
www.onsemi.com
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
•
•
•
•
•
•
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.0 pF @ VR = 20 V
High Reverse Voltage − to 70 V
Low Reverse Leakage − 200 nA (Max)
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC Qualified and PPAP
Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25°C
MBD701
MMBD701L, SMMBD701L
PF
mW
280
200
Derate above 25°C
MBD701
MMBD701L, SMMBD701L
mW/°C
2.8
2.0
Operating Junction Temperature
Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 7
1
TO−92 2−Lead
CASE 182
STYLE 1
SOT−23 (TO−236)
CASE 318
STYLE 8
TO−92
SOT−23
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
MARKING DIAGRAMS
MBD
701
AYW G
G
5H M G
G
1
TO−92
SOT−23
A
= Assembly Location
Y
= Year
W = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBD701/D
MBD701, MMBD701L, SMMBD701L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
70
−
−
−
0.5
1.0
−
9.0
200
−
0.42
0.5
−
0.7
1.0
V(BR)R
Total Capacitance
(VR = 20 V, f = 1.0 MHz) Figure 1
CT
Reverse Leakage
(VR = 35 V) Figure 3
IR
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
Unit
V
pF
nAdc
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Package
Shipping†
MBD701G
TO−92
(Pb−Free)
1,000 Units / Bulk
MMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBD701LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MBD701, MMBD701L, SMMBD701L
TYPICAL ELECTRICAL CHARACTERISTICS
500
2.0
t , MINORITY CARRIER LIFETIME (ps)
C T, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
1.6
1.2
0.8
0.4
400
KRAKAUER METHOD
300
200
100
0
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
50
0
10
Figure 1. Total Capacitance
80
90
100
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
30
40
50
60
70
IF, FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
10
TA = 100°C
1.0
TA = 75°C
0.1
0.01
0.001
20
TA = 25°C
10
TA = -40°C
TA = 85°C
1.0
TA = 25°C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
50
0
Figure 3. Reverse Leakage
IF(PEAK)
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
1.6
Figure 4. Forward Voltage
CAPACITIVE
CONDUCTION
IR(PEAK)
FORWARD
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
STORAGE
CONDUCTION
PADS
DUT
Figure 5. Krakauer Method of Measuring Lifetime
www.onsemi.com
3
SAMPLING
OSCILLOSCOPE
(50 W INPUT)
2.0
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
D
ÉÉ
ÉÉ
L
P
J
K
SECTION X−X
X X
D
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
--0.250
--0.080
0.105
--0.050
0.115
--0.135
---
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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4
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
--6.35
--2.03
2.66
--1.27
2.93
--3.43
---
MBD701, MMBD701L, SMMBD701L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10 °
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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For additional information, please contact your local
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MBD701/D
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