HiPerFETTM Power MOSFETs Q2-Class IXFK66N50Q2 IXFX66N50Q2 VDSS ID25 = 500V = 66A Ω ≤ 80mΩ ≤ 250ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 66 264 A A IA EAS TC = 25°C TC = 25°C 66 4 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb. Weight TO-264 PLUS247 10 6 g g Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved TJ = 125°C V 5.5 V ± 200 nA 25 3 μA mA 80 mΩ G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density DS98983B(5/08) IXFK66N50Q2 IXFX66N50Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 30 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264 (IXFK) Outline 44 S 9125 pF 1200 pF 318 pF Crss td(on) Resistive Switching Times 32 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 ns td(off) RG = 1Ω (External) 60 ns 10 ns 200 nC 47 nC 98 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.17 RthCS Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.15 Source-Drain Diode °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 66 A Repetitive, pulse width limited by TJM 264 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns μC A IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK66N50Q2 IXFX66N50Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25° C @ 25° C 70 160 VGS = 10V VGS = 10V 140 8V 7V 6V I D - Amperes 50 40 5.5V 30 20 5V 10 8V 120 I D - Amperes 60 4.5V 0 100 7V 80 60 40 6V 20 5V 0 0 1 2 3 4 5 6 7 0 2 4 6 V D S - Volts 12 14 16 18 20 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature @ 125° C 70 3.0 VGS = 10V 60 R D S ( o n ) - Normalized 7V 50 I D - Amperes 10 V D S - Volts Fig. 3. Output Characteristics 6V 40 5V 30 20 4.5V 10 3.5V 0 2.8 2.6 2.4 VGS = 10V 2.2 2.0 1.8 I D = 66A 1.6 1.4 1.2 I D = 33A 1.0 0.8 0.6 0.4 0 2 4 6 8 10 12 14 -50 -25 0 VD S - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 70 3.0 2.8 60 VGS = 10V 2.6 TJ = 125 °C 2.4 50 I D - Amperes R D S ( o n ) - Normalized 8 2.2 2.0 1.8 1.6 40 30 20 1.4 1.2 10 TJ = 25°C 1.0 0.8 0 0 20 40 60 I D 80 100 - Amperes © 2008 IXYS CORPORATION,All rights reserved 120 140 160 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFK66N50Q2 IXFX66N50Q2 Fig. 8. Transconductance 100 90 90 80 80 70 70 60 TJ = 125°C 50 25°C 40 - 40°C g f s - Siemens I D - Amperes Fig. 7. Input Admittance 30 TJ = - 40 °C 25°C 60 125°C 50 40 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 V G S - Volts 80 100 120 140 D - Amperes Fig. 10. Gate Charge 180 10 160 9 VDS = 250V 140 8 ID = 33A 7 IG = 10m A 120 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 100 80 60 60 I TJ = 125 °C 6 5 4 3 40 2 TJ = 25°C 20 1 0 0 0.4 0.5 0.6 0.7 0.8 VS D 0.9 1.0 1.1 1.2 1.3 0 20 40 - Volts 60 Q 80 G 100 120 140 160 180 200 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100000 1000 RDS(on) Limit Ciss I D - Amperes Capacitance - picoFarads f = 1MHz 10000 Coss 1000 100 25µs 100µs 1ms 10m s 10 TJ = 150ºC DC TC = 25ºC Crss Single Pulse 1 100 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VD S - Volts 1000 IXFK66N50Q2 IXFX66N50Q2 Fig. 13. Maximum Transient Thermal Impedance Z ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 100 1000 10000 Pulse Width - milliseconds © 2008 IXYS CORPORATION,All rights reserved IXYS REF: F_66N50Q2(94)5-28-08-C