MCH3479 Power MOSFET 20V, 64mΩ, 3.5A, Single N-Channel Features www.onsemi.com VDSS • Low On-Resistance • 1.8V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance 20V 95mΩ@ 2.5V 3.5A Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A IDP 14 A PD 0.9 W 150 °C −55 to +150 °C PW≤10μs, duty cycle≤1% ID Max 149mΩ@ 1.8V Specifications Drain Current (Pulse) RDS(on) Max 64mΩ@ 4.5V 3 1 1 : Gate 2 : Source 3 : Drain Power Dissipation When mounted on ceramic substrate 2 (900mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL Marking Thermal Resistance Ratings Value Unit FL LOT No. Symbol LOT No. Parameter Junction to Ambient When mounted on ceramic substrate 2 RθJA 138.8 °C/W TL (900mm × 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : MCH3479/D MCH3479 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.3 V Forward Transconductance gFS VDS=10V, ID=1.5A 2.8 RDS(on)1 ID=1.5A, VGS=4.5V 49 64 mΩ RDS(on)2 ID=1A, VGS=2.5V 68 95 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 99 149 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 20 V 0.4 S 260 pF 65 pF Crss 50 pF Turn-ON Delay Time td(on) 6.2 ns Rise Time tr 19 ns Turn-OFF Delay Time td(off) 30 ns Fall Time tf 28 ns Total Gate Charge Qg 2.8 nC Gate to Source Charge Qgs 0.6 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=3.5A 0.9 IS=3.5A, VGS=0V 0.85 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1.5A RL=6.7Ω VIN D PW=10μs D.C.≤1% VOUT G P.G MCH3479 50Ω S www.onsemi.com 2 MCH3479 www.onsemi.com 3 MCH3479 www.onsemi.com 4 MCH3479 Package Dimensions MCH3479-TL-H / MCH3479-TL-W MCPH3 CASE 419AQ ISSUE O unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH3479-TL-H MCH3479-TL-W Package Shipping Note MCPH3 SC-70FL, SOT-323 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3479 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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