DDR2 SDRAM 256MB, 512MB Registered DIMMs DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs DDR2 Registered DIMM Ordering Information Part Number Density Organization Component Composition Number of Rank Parity Register Height M393T3253FG(Z)3-CD5/CC 256MB 32Mx72 32Mx8(K4T56083QF)*9EA 1 X 30mm M393T3253FG(Z)0-CD5/CC 256MB 32Mx72 32Mx8(K4T56083QF)*9EA 1 X 30mm M393T3253FZA-CE6/D5/CC 256MB 32Mx72 32Mx8(K4T56083QF)*9EA 1 O 30mm M393T6453FG(Z)3-CD5/CC 512MB 64Mx72 32Mx8(K4T56083QF)*18EA 2 X 30mm 30mm M393T6453FG(Z)0-CD5/CC 512MB 64Mx72 32Mx8(K4T56083QF)*18EA 2 X M393T6453FZA-CE6/D5/CC 512MB 64Mx72 32Mx8(K4T56083QF)*18EA 2 O 30mm M393T6450FG(Z)3-CD5/CC 512MB 64Mx72 64Mx4(K4T56043QF)*18EA 1 X 30mm M393T6450FG(Z)0-CD5/CC 512MB 64Mx72 64Mx4(K4T56043QF)*18EA 1 X 30mm M393T6450FZA-CE6/D5/CC 512MB 64Mx72 64Mx4(K4T56043QF)*18EA 1 O 30mm Note: “Z” of Part number(11th digit) stand for Lead-free products. Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products. Note: "A" of Part number(12th digit) stand for Parity Register products. Features • Performance range E6 (DDR2-667) D5 (DDR2-533) CC (DDR2-400) Unit Speed@CL3 400 400 400 Mbps Speed@CL4 533 533 400 Mbps Speed@CL5 667 - - Mbps CL-tRCD-tRP 5-5-5 4-4-4 3-3-3 CK • JEDEC standard 1.8V ± 0.1V Power Supply • VDDQ = 1.8V ± 0.1V • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin • 4 Banks • Posted CAS • Programmable CAS Latency: 3, 4, 5 • Programmable Additive Latency: 0, 1 , 2 , 3 and 4 • Write Latency(WL) = Read Latency(RL) -1 • Burst Length: 4 , 8(Interleave/nibble sequential) • Programmable Sequential / Interleave Burst Mode • Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) • Off-Chip Driver(OCD) Impedance Adjustment • On Die Termination • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Serial presence detect with EEPROM • DDR2 SDRAM Package: 60ball FBGA - 64Mx4/32Mx8 • All of Lead-free products are compliant for RoHS Note : For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram. Address Configuration Organization Row Address Column Address Bank Address Auto Precharge 64Mx4(256Mb) based Module A0-A12 A0-A9,A11 BA0-BA1 A10 32Mx8(256Mb) based Module A0-A12 A0-A9 BA0-BA1 A10 Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Pin Configurations (Front side/Back side) Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VREF 121 VSS 31 DQ19 151 VSS 61 A4 181 VDDQ 91 VSS 211 DM5/DQS14 NC/DQS14 2 VSS 122 DQ4 32 VSS 152 DQ28 62 VDDQ 182 A3 92 DQS5 212 3 DQ0 123 DQ5 33 DQ24 153 DQ29 63 A2 183 A1 93 DQS5 213 VSS 4 DQ1 124 VSS 34 DQ25 154 VSS 64 VDD 184 VDD 94 VSS 214 DQ46 DQ47 5 VSS 125 DM0/DQS9 35 VSS 155 DM3/DQS12 95 DQ42 215 6 DQS0 126 NC/DQS9 36 DQS3 156 NC/DQS12 65 VSS 185 CK0 96 DQ43 216 VSS 7 DQS0 127 VSS 37 DQS3 157 VSS 66 VSS 186 CK0 97 VSS 217 DQ52 DQ53 KEY 8 VSS 128 DQ6 38 VSS 158 DQ30 67 VDD 187 VDD 98 DQ48 218 9 DQ2 129 DQ7 39 DQ26 159 DQ31 68 NC/Par_In 188 A0 99 DQ49 219 VSS 10 DQ3 130 VSS 40 DQ27 160 VSS 69 VDD 189 VDD 100 VSS 220 RFU RFU 11 VSS 131 DQ12 41 VSS 161 CB4 70 A10/AP 190 BA1 101 SA2 221 12 DQ8 132 DQ13 42 CB0 162 CB5 71 BA0 191 VDDQ 102 NC(TEST) 222 VSS 13 DQ9 133 VSS 43 CB1 163 VSS 72 VDDQ 192 RAS 103 VSS 223 DM6/DQS15 NC/DQS15 14 VSS 134 DM1/DQS10 44 VSS 164 DM8/DQS17 73 WE 193 S0 104 DQS6 224 15 DQS1 135 NC/DQS10 45 DQS8 165 NC/DQS17 74 CAS 194 VDDQ 105 DQS6 225 VSS 16 DQS1 136 VSS 46 DQS8 166 VSS 75 VDDQ 195 ODT0 106 VSS 226 DQ54 DQ55 17 VSS 137 RFU 47 VSS 167 CB6 76 S14 196 NC 107 DQ50 227 18 RESET 138 RFU 48 CB2 168 CB7 77 ODT1 197 VDD 108 DQ51 228 VSS 19 NC 139 VSS 49 CB3 169 VSS 78 VDDQ 198 VSS 109 VSS 229 DQ60 DQ61 20 VSS 140 DQ14 50 VSS 170 VDDQ 79 VSS 199 DQ36 110 DQ56 230 21 DQ10 141 DQ15 51 VDDQ 171 80 DQ32 200 DQ37 111 DQ57 231 VSS 22 DQ11 142 VSS 52 CKE0 172 CKE14 VDD 81 DQ33 201 VSS 112 VSS 232 DM7/DQS16 NC/DQS16 23 VSS 143 DQ20 53 VDD 173 NC 82 VSS 202 DM4/DQS13 113 DQS7 233 24 DQ16 144 DQ21 54 NC 174 83 DQS4 203 NC/DQS13 114 DQS7 234 VSS 25 DQ17 145 VSS 55 NC/Err_Out 175 NC VDDQ 84 DQS4 204 VSS 115 VSS 235 DQ62 DQ63 26 VSS 146 DM2/DQS11 56 VDDQ 176 A12 85 VSS 205 DQ38 116 DQ58 236 27 DQS2 147 NC/DQS11 57 A11 177 A9 86 DQ34 206 DQ39 117 DQ59 237 VSS 28 DQS2 148 VSS 58 A7 178 VDD 87 DQ35 207 VSS 118 VSS 238 VDDSPD 29 VSS 149 DQ22 59 VDD 179 A8 88 VSS 208 DQ44 119 SDA 239 SA0 30 DQ18 150 DQ23 60 A5 180 A6 89 DQ40 209 120 SCL 240 SA1 90 DQ41 210 DQ45 VSS NC = No Connect, RFU = Reserved for Future Use 1. RESET (Pin 18) is connected to both OE of PLL and Reset of register. 2. The Test pin (Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules (DIMMs) 3. NC/Err_Out ( Pin 55) and NC/Par_In (Pin 68) are for optional function to check address and command parity. 4. CKE1,S1 Pin is used for double side Registered DIMM. Pin Description Pin Name Description Pin Name Description CK0 Clock Inputs, positive line ODT0~ODT1 On die termination CK0 Clock inputs, negative line DQ0~DQ63 Data Input/Output CKE0, CKE1 Clock Enables CB0~CB7 Data check bits Input/Output RAS Row Address Strobe DQS0~DQS8 Data strobes CAS Column Address Strobe DQS0~DQS8 Data strobes, negative line WE Write Enable DM(0~8), DQS(9~17) Data Masks / Data strobes (Read) S0, S1 Chip Selects DQS9~DQS17 Data strobes (Read), negative line A0~A9, A11~A12 Address Inputs RFU Reserved for Future Use A10/AP Address Input/Autoprecharge NC No Connect BA0, BA1 DDR2 SDRAM Bank Address TEST Memory bus test tool (Not Connect and Not Useable on DIMMs) SCL Serial Presence Detect (SPD) Clock Input VDD Core Power SDA SPD Data Input/Output VDDQ I/O Power SA0~SA2 SPD address VSS Ground Par_In Parity bit for the Address and Control bus VREF Input/Output Reference Err_Out Parity error found in the Address and Control bus VDDSPD RESET Register and PLL control pin SPD Power * The VDD and VDDQ pins are tied to the single power-plane on PCB. Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Input/Output Functional Description Symbol Type Function CK0 Input CK0 Input Negative line of the differential pair of system clock inputs that drives the input to the on-DIMM PLL. CKE0~CKE1 Input Activates the SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks, CKE low initiates the Power Down mode, or the Self Refresh mode. S0~S1 Input Enables the associated SDRAM command decoder when low and disables decoder when high. When decoder is disabled, new commands are ignored but previous operations continue. These input signals also disable all outputs (except CKE and ODT) of the register(s) on the DIMM when both inputs are high. ODT0~ODT1 Input I/O bus impedance control signals. RAS, CAS, WE Input When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the operation to be executed by the SDRAM. VREF Supply Reference voltage for SSTL_18 inputs VDDQ Supply Isolated power supply for the DDR SDRAM output buffers to provide improved noise immunity BA0~BA1 Input Selects which SDRAM bank of four is activated. A0~A9,A10/AP A11~A12 Input During a Bank Activate command cycle, Address defines the row address. During a Read or Write command cycle, Address defines the column address. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0, BA1 defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0, BA1 to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0 or BA1. If AP is low, BA0 and BA1 are used to define which bank to precharge. DQ0~63, CB0~CB7 In/Out Data and Check Bit Input/Output pins DM0~DM8 Input Masks write data when high, issued concurrently with input data. Both DM and DQ have a write latency of one clock once the write command is registered into the SDRAM. VDD, VSS Supply Power and ground for the DDR SDRAM input buffers and core logic DQS0~DQS17 In/Out Positive line of the differential data strobe for input and output data. DQS0~DQS17 In/Out Negative line of the differential data strobe for input and output data. SA0~SA2 Input These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD EEPROM address range. SDA In/Out This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be connected from the SDA bus line to VDDSPD to act as a pullup. SCL Input This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time to VDDSPD to act as a pullup. VDDSPD Supply RESET Input Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL. Serial EEPROM positive power supply (wired to a separate power pin at the connector which supports from 1.7 Volt to 3.6 Volt operation). The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will be set to low level (The PLL will remain synchronized with the input clock ) Par_In Input Parity bit for the Address and Control bus. ( “1 “ : Odd, “0 “ : Even) Err_Out Input Parity error found in the Address and Control bus TEST In/Out Used by memory bus analysis tools (unused on memory DIMMs) Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Functional Block Diagram: 256MB, 32Mx72 Module(populated as 1 rank of x8 DDR2 SDRAMs) M393T3253FG(Z)0 / M393T3253FG(Z)3 / M393T3253FZA RS0 DQS0 DQS0 DM0/DQS9 NC/DQS9 DQS4 DQS4 DM4/DQS13 NC/DQS13 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 D0 DQS1 DQS1 DM1/DQS10 NC/DQS10 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS D4 DQS5 DQS5 DM5/DQS14 NC/DQS14 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 D1 DQS2 DQS2 DM2/DQS11 NC/DQS11 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS D5 DQS6 DQS6 DM6/DQS15 NC/DQS15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 D2 DQS3 DQS3 DM3/DQS12 NC/DQS12 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS D6 DQS7 DQS7 DM7/DQS16 NC/DQS16 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 D3 DQS8 DQS8 DM8/DQS17 NC/DQS17 CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 1:1 R E G I S T E R S0* BA0-BA1 A0-A12 RAS CAS WE CKE0 ODT0 RESET RST D8 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS D7 Serial PD SCL SDA WP A0 Notes : 1. DQ-to-I/O wiring may be changed within a byte. 2. DQ/DQS/DM/CKE/S relationships must be maintained as shown. 3. Unless otherwise noted, resister values are 22 Ohms A1 A2 SA0 SA1 SA2 Signals for Address and Command Parity Function (M393T3253FZA) VDDSPD Serial PD VDD/VDDQ D0 - D8 VREF D0 - D8 VSS D0 - D8 RSO-> CS : DDR2 SDRAMs D0-D8 RBA0-RBA1 -> BA0-BA1 : DDR2 SDRAMs D0-D8 CK0 RA0-RA12 -> A0-A12 : DDR2 SDRAMs D0-D8 RRAS -> RAS : DDR2 SDRAMs D0-D8 RCAS -> CAS : DDR2 SDRAMs D0-D8 CK0 RWE -> WE : DDR2 SDRAMs D0-D8 RCKE0 -> CKE : DDR2 SDRAMs D0-D8 RESET RODT0 -> ODT0 : DDR2 SDRAMs D0-D8 VSS VSS PAR_IN 100K ohms C0 C1 Register PAR_IN PPO QERR Err_Out The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: "Register Options for Unused Address inputs" P L L OE PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK7 -> CK : Register PCK7 -> CK : Register * S0 connects to DCS and VDD connects to CSR on the register. PCK7 PCK7 Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Functional Block Diagram: 512MB, 64Mx72 Module(populated as 2 rank of x8 DDR2 SDRAMs) M393T6453FG(Z)0 / M393T6453FG(Z)3 / M393T6453FZA RS1 RS0 DQS0 DQS0 DM0/DQS9 NC/DQS9 DQS4 DQS4 DM4/DQS13 NC/DQS13 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D0 DQS DQS DM/ NU/ CS RDQS RDQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 D9 DQS1 DQS1 DM1/DQS10 NC/DQS10 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D4 DQS DQS D13 DQS5 DQS5 DM5/DQS14 NC/DQS14 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D1 DQS DQS D10 DQS2 DQS2 DM2/DQS11 NC/DQS11 DM/ NU/ CS RDQS RDQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D5 DQS DQS D14 DQS6 DQS6 DM6/DQS15 NC/DQS15 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D2 DQS DQS D11 DQS3 DQS3 DM3/DQS12 NC/DQS12 DM/ NU/ CS RDQS RDQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D6 DQS DQS D15 DQS7 DQS7 DM7/DQS16 NC/DQS16 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D3 DQS DQS D12 DQS8 DQS8 DM8/DQS17 NC/DQS17 DM/ NU/ CS RDQS RDQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 D7 Serial PD CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 S0* S1* BA0-BA1 A0-A12 RAS CAS WE CKE0 CKE1 ODT0 ODT1 DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 1:2 R E G I S T E R RESET** RST PCK7** PCK7** D8 DQS DQS DM/ NU/ CS RDQS RDQS I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS DQS D17 SCL SDA WP A0 A1 A2 SA0 SA1 SA2 DM/ NU/ CS RDQS RDQS DQS DQS D16 VDDSPD Serial PD VDD/VDDQ D0 - D17 VREF D0 - D17 VSS D0 - D17 Signals for Address and Command Parity Function (M393T6453FZA) RSO-> CS : DDR2 SDRAMs D0-D8 C0 Register A C0 Register B VDD VSS RS1-> CS : DDR2 SDRAMs D9-D17 C1 C1 VDD VDD PPO RBA0-RBA1 -> BA0-BA1 : DDR2 SDRAMs D0-D17 PPO PAR_IN PAR_IN PAR_IN RA0-RA12 -> A0-A12 : DDR2 SDRAMs D0-D17 QERR QERR RRAS -> RAS : DDR2 SDRAMs D0-D17 100K ohms RCAS -> CAS : DDR2 SDRAMs D0-D17 The resistors on Par_In, A13, A14, A15, BA2 and the RWE -> WE : DDR2 SDRAMs D0-D17 signal line of Err_Out refer to the section: "Register RCKE0 -> CKE : DDR2 SDRAMs D0-D8 Options for Unused Address inputs" RCKE1 -> CKE : DDR2 SDRAMs D9-D17 RODT0 -> ODT0 : DDR2 SDRAMs D0-D8 RODT1 -> ODT1 : DDR2 SDRAMs D9-D17 Err_Out Notes : 1. DQ-to-I/O wiring may be changed per nibble. 2. Unless otherwise noted, resister values are 22 Ohms 3. RS0 and RS1 alternate between the back and front sides of the DIMM * S0 connects to DCS and S0 connects to CSR on a Register, S1 connects to DCS and S0 connects to CSR on another Register. ** RESET, PCK7 and PCK7 connects to both Registers. Other signals connect to one of two Registers. CK0 CK0 RESET P L L OE PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D17 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D17 PCK7 -> CK : Register PCK7 -> CK : Register Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Functional Block Diagram: 512MB, 64Mx72 Module(populated as 1 rank of x4 DDR2 SDRAMs) M393T6450FG(Z)0 / M393T6450FG(Z)3 / M393T6450FZA VSS RS0 DM0/DQS9 NC/DQS9 DQS0 DQS0 DM DQ0 DQ1 DQ2 DQ3 DQS1 DQS1 I/O 0 I/O 1 I/O 2 I/O 3 DM DQ8 DQ9 DQ10 DQ11 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D0 CS DQS DQS D1 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D3 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 DM DQ36 DQ37 DQ38 DQ39 D4 DQS5 DQS5 CS DQS DQS D10 CS DQS DQS D11 CS DQS DQS D12 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D13 DM5/DQS14 NC/DQS14 DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM DQ44 DQ45 DQ46 DQ47 D5 DQS6 DQS6 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D14 Serial PD DM6/DQS15 NC/DQS15 DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS SCL DM DQ52 DQ53 DQ54 DQ55 D6 DQS7 DQS7 I/O 0 I/O 1 I/O 2 I/O 3 CS SDA WP A0 DQS DQS D15 A1 A2 SA0 SA1 SA2 DM7DQS16 NC/DQS16 DM I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS DM DQ60 DQ61 DQ62 DQ63 D7 DQS8 DQS8 I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS I/O 0 I/O 1 I/O 2 I/O 3 CS DQS DQS D8 DM CB4 CB5 CB6 CB7 I/O 0 I/O 1 I/O 2 I/O 3 VDDSPD Serial PD VDD/VDDQ D0 - D17 VREF D0 - D17 VSS D0 - D17 D16 DM8/DQS17 NC/DQS17 DM CB0 CB1 CB2 CB3 D9 DM4/DQS13 NC/DQS13 DM DQ56 DQ57 DQ58 DQ59 I/O 0 I/O 1 I/O 2 I/O 3 DM DQ28 DQ29 DQ30 DQ31 DQS4 DQS4 DQ48 DQ49 DQ50 DQ51 DQS DQS DM3/DQS12 NC/DQS12 DM DQ40 DQ41 DQ42 DQ43 DM DQ20 DQ21 DQ22 DQ23 D2 DQS3 DQS3 DQ32 DQ33 DQ34 DQ35 I/O 0 I/O 1 I/O 2 I/O 3 CS DM2/DQS11 NC/DQS11 DM DQ24 DQ25 DQ26 DQ27 I/O 0 I/O 1 I/O 2 I/O 3 DM DQ12 DQ13 DQ14 DQ15 DQS2 DQS2 DQ16 DQ17 DQ18 DQ19 DM DQ4 DQ5 DQ6 DQ7 DM1/DQS10 NC/DQS10 CS DQS DQS D17 Signals for Address and Command Parity Function (M393T6450FZA) 1:2 R E G I S T E R S0* BA0-BA1 A0-A12 RAS CAS WE CKE0 ODT0 RESET** RST PCK7** PCK7** RSO-> CS : DDR2 SDRAMs D0-D17 RBA0-RBA1 -> BA0-BA1 : DDR2 SDRAMs D0-D17 RA0-RA12 -> A0-A12 : DDR2 SDRAMs D0-D17 RRAS -> RAS : DDR2 SDRAMs D0-D17 RCAS -> CAS : DDR2 SDRAMs D0-D17 RWE -> WE : DDR2 SDRAMs D0-D17 RCKE0 -> CKE : DDR2 SDRAMs D0-D17 RODT0 -> ODT0 : DDR2 SDRAMs D0-D17 Notes : 1. DQ-to-I/O wiring may be changed per nibble. 2. Unless otherwise noted, resister values are 22 Ohms. VSS VDD PAR_IN Register A PAR_IN 100K ohms PPO VDD VDD C0 C1 Register B PAR_IN PPO QERR QERR Err_Out The resistors on Par_In, A13, A14, A15, BA2 and the signal line of Err_Out refer to the section: "Register Options for Unused Address inputs" CK0 * S0 connects to DCS of Register1, CSR of Register2. CSR of register 1 and DCS of register 2 connects to VDD. * RESET, PCK7 and PCK7 connects to both Registers. Other signals connect to one of two Registers. C0 C1 CK0 RESET P L L OE PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK0-PCK6, PCK8, PCK9 -> CK : DDR2 SDRAMs D0-D8 PCK7 -> CK : Register PCK7 -> CK : Register Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Absolute Maximum DC Ratings Symbol Parameter Rating Units Notes Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1 VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1 VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1 Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1 -55 to +100 °C 1, 2 VDD VIN, VOUT TSTG Storage Temperature Note : 1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. AC & DC Operating Conditions Recommended DC Operating Conditions (SSTL - 1.8) Symbol Parameter Rating Min. Typ. Max. Units Notes VDD Supply Voltage 1.7 1.8 1.9 V VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 4 VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 4 VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1,2 Termination Voltage VREF-0.04 VREF VREF+0.04 V 3 VTT Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VDD, VDDQ and VDDL tied together. Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Operating Temperature Condition Symbol Parameter Rating Units Notes TOPER Operating Temperature 0 to 95 °C 1, 2, 3 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard. 2. At 0 - 85 °C, operation temperature range are the temperature which all DRAM specification will be supported. 3. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate. Input DC Logic Level Symbol Parameter Min. Max. Units VIH(DC) DC input logic high VREF + 0.125 VDDQ + 0.3 V VIL(DC) DC input logic low - 0.3 VREF - 0.125 V Notes Input AC Logic Level DDR2-400, DDR2-533 Symbol Parameter VIH(AC) AC input logic high VIL(AC) AC input logic low Min. DDR2-667 Max. Min. VREF + 0.250 - VREF + 0.200 - VREF - 0.250 Units Max. Notes V VREF - 0.200 V AC Input Test Conditions Symbol VREF VSWING(MAX) SLEW Condition Value Units 0.5 * VDDQ V 1 Input signal maximum peak to peak swing 1.0 V 1 Input signal minimum slew rate 1.0 V/ns 2, 3 Input reference voltage Notes Notes: 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions. VDDQ VIH(AC) min VIH(DC) min VSWING(MAX) VREF VIL(DC) max VIL(AC) max delta TF Falling Slew = delta TR VREF - VIL(AC) max delta TF Rising Slew = VSS VIH(AC) min - VREF delta TR < AC Input Test Signal Waveform > Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0mA mA Slow PDN Exit MRS(12) = 1mA mA IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA IDD5B Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD6 Self refresh current; CK and CK\ at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following page for detailed timing conditions Normal mA Low Power mA Notes mA Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Operating Current Table(1-1) (TA=0oC, VDD= 1.9V) M393T3253FG(Z)0 / M393T3253FG(Z)3 / M393T3253FZA : 256MB(32Mx8 *9) Module Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit IDD0 TBD 1,420 1,265 mA IDD1 TBD 1,540 1,330 mA mA IDD2P TBD 562 522 IDD2Q TBD 715 665 mA IDD2N TBD 730 670 mA IDD3P-F TBD 750 720 mA IDD3P-S TBD 375 365 mA mA IDD3N TBD 1,180 1,065 IDD4W TBD 2,115 1,635 mA IDD4R TBD 1,840 1,520 mA IDD5B IDD6* Normal IDD7 TBD 2,005 1,900 mA TBD 45 45 mA TBD 2,975 2,885 mA Notes * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. M393T6453FG(Z)0 / M393T6453FG(Z)3 / M393T6453FZA : 512MB(32Mx8 *18) Module Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit IDD0 TBD 1,790 1,665 mA IDD1 TBD 1,920 1,770 mA IDD2P TBD 784 724 mA IDD2Q TBD 1,110 1,040 mA IDD2N TBD 1,090 1,060 mA IDD3P-F TBD 1,190 1,130 mA IDD3P-S TBD 600 570 mA IDD3N TBD 1,480 1,415 mA IDD4W TBD 2,515 2,045 mA IDD4R TBD 2,240 1,920 mA IDD5B TBD 2,395 2,260 mA TBD 90 90 mA TBD 3,605 3,365 mA IDD6* Normal IDD7 Notes * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Operating Current Table(1-2) (TA=0oC, VDD= 1.9V) M393T6450FG(Z)0 / M393T6450FG(Z)3 / M393T6450FZA : 512MB(64Mx4 *18) Module Symbol E6 (DDR2-667@CL=5) D5 (DDR2-533@CL=4) CC (DDR2-400@CL=3) Unit IDD0 TBD 2,420 2,250 mA IDD1 TBD 2,640 2,400 mA IDD2P TBD 784 724 mA IDD2Q TBD 1,110 1,040 mA IDD2N TBD 1,090 1,060 mA IDD3P-F TBD 1,190 1,130 mA IDD3P-S TBD 600 570 mA IDD3N TBD 1,840 1,730 mA IDD4W TBD 3,550 2,810 mA IDD4R TBD 3,230 2,730 mA IDD5B TBD 3,610 3,430 mA TBD 90 90 mA TBD 5,540 5,210 mA IDD6* Normal IDD7 Notes * IDD6 = DRAM current + standby current of PLL and Register ** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA=25oC) Parameter Part-Number Min Symbol Max M393T3253FG(Z)0 M393T3253FG(Z)3 M393T3253FZA Min Max M393T6453FG(Z)0 M393T6453FG(Z)3 M393T6453FZA Min Max M393T6450FG(Z)0 M393T6450FG(Z)3 M393T6450FZA Input capacitance, CK and CK CCK - 11 - 11 - 11 Input capacitance, CKE and CS CI1 - 12 - 12 - 12 Input capacitance, Addr,RAS,CAS,WE CI2 - 12 - 12 - 12 Input/output capacitance, DQ, DM, DQS, DQS CIO - 10 - 10 - 10 Units pF * DM is internally loaded to match DQ and DQS identically. Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Electrical Characteristics & AC Timing for DDR2-667/533/400 SDRAM (0 °C < TCASE < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) Refresh Parameters by Device Density Parameter Symbol Refresh to active/Refresh command time tRFC Average periodic refresh interval tREFI 256Mb 512Mb 1Gb 2Gb 4Gb Units 75 105 127.5 195 tbd ns 0 °C ≤ TCASE ≤ 85°C 7.8 7.8 7.8 7.8 7.8 µs 85 °C < TCASE ≤ 95°C 3.9 3.9 3.9 3.9 3.9 µs Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Speed DDR2-667(E6) DDR2-533(D5) DDR2-400(CC) Bin (CL - tRCD - tRP) 5-5-5 4-4-4 3-3-3 Units Parameter min max min max min max tCK, CL=3 5 8 5 8 5 8 ns tCK, CL=4 3.75 8 3.75 8 5 8 ns tCK, CL=5 3 8 - - - - ns tRCD 15 15 15 ns tRP 15 15 15 ns tRC 54 tRAS 39 55 70000 55 40 70000 ns 40 70000 ns Timing Parameters by Speed Grade (Refer to notes for informations related to this table at the bottom) Parameter DDR2-667 Symbol DDR2-533 DDR2-400 Units Notes min max min max min max -500 +500 -600 +600 DQ output access time from CK/CK tAC -450 +450 ps DQS output access time from CK/CK tDQSCK -400 +400 -450 +450 -500 +500 ps CK high-level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK CK half period tHP min(tCL, tCH) x min(tCL, tCH) x min(tCL, tCH) x ps Clock cycle time, CL=x tCK 3000 8000 3750 8000 5000 8000 ps DQ and DM input hold time tDH 175 x 225 x 275 x ps DQ and DM input setup time tDS 50 x 100 x 150 x ps Control & Address input pulse width for each input tIPW 0.6 x 0.6 x 0.6 x tCK DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x 0.35 x tCK Data-out high-impedance time from CK/CK tHZ x tAC max x tAC max x tAC max ps DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC min tAC max tAC min tAC max ps DQ low-impedance time from CK/CK tLZ(DQ) 2*tAC min tAC max 2* tACmin tAC max 2* tACmin tAC max ps DQS-DQ skew for DQS and associated DQ signals tDQSQ x 250 x 300 x 350 ps DQ hold skew factor tQHS ps DQ/DQS output hold time from DQS tQH Write command to first DQS latching transition DQS input high pulse width x 350 x 400 x 450 tHP - tQHS x tHP - tQHS x tHP - tQHS x ps tDQSS WL-0.25 WL+0.25 WL-0.25 WL+0.25 WL-0.25 WL+0.25 tCK tDQSH 0.35 x 0.35 x 0.35 x tCK Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Parameter DDR2-667 Symbol DDR2-533 DDR2-400 Units Notes min max min max min max DQS input low pulse width tDQSL 0.35 x 0.35 x 0.35 x tCK DQS falling edge to CK setup time tDSS 0.2 x 0.2 x 0.2 x tCK DQS falling edge hold time from CK tDSH 0.2 x 0.2 x 0.2 x tCK Mode register set command cycle time tMRD 2 x 2 x 2 x tCK Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK Write preamble tWPRE 0.35 x 0.35 x 0.35 x tCK Address and control input hold time tIH 275 x 375 x 475 x ps Address and control input setup time tIS 200 x 250 x 350 x ps Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK Active to active command period for 1KB page size products tRRD 7.5 x 7.5 x 7.5 x ns Active to active command period for 2KB page size products tRRD 10 x 10 x 10 x ns Four Activate Window for 1KB page size products tFAW 37.5 37.5 37.5 ns Four Activate Window for 2KB page size products tFAW 50 50 50 ns CAS to CAS command delay tCCD 2 2 2 tCK Write recovery time tWR Auto precharge write recovery + precharge time tDAL 15 x 15 x 15 x ns tWR+tRP x tWR+tRP x tWR+tRP x tCK 7.5 x 7.5 x 10 x ns Internal write to read command delay tWTR Internal read to precharge command delay tRTP 7.5 7.5 7.5 Exit self refresh to a non-read command tXSNR tRFC + 10 tRFC + 10 tRFC + 10 ns Exit self refresh to a read command tXSRD 200 200 200 tCK Exit precharge power down to any non-read command tXP 2 x 2 x 2 x tCK Exit active power down to read command tXARD 2 x 2 x 2 x tCK Exit active power down to read command (Slow exit, Lower power) tXARDS CKE minimum pulse width (high and low pulse width) tCKE ODT turn-on delay tAOND ODT turn-on tAON ODT turn-on(Power-Down mode) tAONPD ODT turn-off delay tAOFD ns 6 - AL 6 - AL 6 - AL 3 3 3 tCK tCK 2 2 2 2 2 2 tCK tAC(min) tAC(max)+0.7 tAC(min) tAC(max)+1 tAC(min) tAC(max)+1 ns tAC(min)+2 2tCK+tAC(ma x)+1 tAC(min)+2 2tCK+tAC(ma x)+1 tAC(min)+2 2tCK+tAC (max)+1 ns 2.5 2.5 2.5 2.5 2.5 2.5 tCK tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max)+ 0.6 ns tAC(min)+2 2.5tCK+tAC( max)+1 tAC(min)+2 2.5tCK+ tAC(max)+1 tAC(min)+2 2.5tCK+ tAC(max)+1 ns ODT turn-off tAOF ODT turn-off (Power-Down mode) tAOFPD ODT to power down entry latency tANPD 3 3 3 tCK ODT power down exit latency tAXPD 8 8 8 tCK OCD drive mode output delay tOIT 0 Minimum time clocks remains ON after CKE asynchronously drops LOW tDelay tIS+tCK +tIH 12 0 tIS+tCK +tIH 12 0 12 tIS+tCK +tIH ns ns Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Physical Dimensions: 32Mbx8 based 32Mx72 Module(1 Rank) M393T3253FG(Z)0 / M393T3253FG(Z)3 / M393T3253FZA Units : Millimeters 2.70 Register 133.35 30.00 PLL 1.0 max 1.27 ± 0.10 A B 63.00 4.00 4.00 3.00 2.50±0.20 5.00 55.00 0.80±0.05 3.80 2.50 1.50±0.10 Detail A 0.20 1.00 4.00 Detail B The used device is 32M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T56083QF Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs Physical Dimensions: 32Mbx8/64Mbx4 based 64Mx72 Module(2/1 Ranks) M393T6453FG(Z)0 / M393T6453FG(Z)3 / M393T6453FZA M393T6450FG(Z)0 / M393T6450FG(Z)3 / M393T6450FZA Units : Millimeters 133.35 Register 4.00 30.00 PLL 1.0 max 1.7 max 1.27 ± 0.10 A B 63.00 Register 55.00 4.00 4.00 3.00 2.50±0.20 5.00 0.80±0.05 3.80 2.50 0.20 1.00 1.50±0.10 Detail A 4.00 Detail B The used device is 32M x8 / 64M x4 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T56083QF / K4T56043QF Rev. 1.3 Aug. 2005 DDR2 SDRAM 256MB, 512MB Registered DIMMs 240 Pin DDR2 Registered DIMM Clock Topology 0ns (nominal) PLL DDR2 SDRAM 120 ohms OUT1 CK0 120 ohms IN DDR2 SDRAM CK0 Reg.A 120 ohms C OUTN C Feedback In Feedback Out 120 ohms Reg.B Note: 1. 2. 3. 4. The clock delay from the input of the PLL clock to the input of any DDR2 SDRAM or register will be set to 0ns (nominal). Input, output, and feedback clock lines are terminated from line to line as shown, and not from line to ground. Only one PLL output is shown per output type. Any additional PLL outputs will be wired in a similar manner. Termination resistors for the PLL feedback path clocks are located as close to the input pin of the PLL as possible. Rev. 1.3 Aug. 2005 256MB, 512MB Registered DIMMs DDR2 SDRAM Revision History Revision 1.0 (Jan. 2004) - Initial Release Revision 1.1 (Jun. 2004) - Added Lead-Free part number in ordering information. - Changed IDD2P Revision 1.2 (Sep. 2004) - Changed IDD6 Revision 1.3 (Aug. 2004) - Added Dummy Pad PCB and Parity Register Product part number in ordering information. Rev. 1.3 Aug. 2005