MOTOROLA MRF1518T1 The rf mosfet line rf power field effect transistor Datasheet

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by MRF1518/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
The MRF1518T1 is designed for broadband commercial and industrial
applications with frequencies to 520 MHz. The high gain and broadband
performance of this device make it ideal for large–signal, common source
amplifier applications in 12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• RF Power Plastic Surface Mount Package
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
520 MHz, 8 W, 12.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
40
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
4
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
62.5
0.50
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Symbol
Max
Unit
RθJC
2
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Calculated based on the formula PD =
TJ – TC
RθJC
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF1518T1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 100 µA)
VGS(th)
1.0
1.6
2.1
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.4
—
Vdc
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
66
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
33
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
4.5
—
pF
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)
η
50
55
—
%
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
MRF1518T1
2
MOTOROLA RF DEVICE DATA
B1, B2
Short Ferrite Beads, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
82 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 mF, 100 mil Chip Capacitors
30 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 Ω Chip Resistor (0805)
51 Ω, 1/2 W Resistor
10 Ω Chip Resistor (0805)
C1, C12
C2, C3, C10, C11
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
L1
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
33 kΩ, 1/8 W Resistor
0.451″ x 0.080″ Microstrip
1.005″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.155″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.065″ x 0.080″ Microstrip
0.266″ x 0.080″ Microstrip
1.113″ x 0.080″ Microstrip
0.433″ x 0.080″ Microstrip
Glass Teflon, 31 mils, 2 oz. Copper
Figure 1. 450 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 – 520 MHz
,-.
& &"&&#'%
&&!"&#!$%
,-.
,-.
,-.
/ + '0
+
+
+
+
)* !" #!$%
+
Figure 2. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
+
/ + '0
(
,-.
(
,-.
,-.
(
,-.
(
!" #!$%
Figure 3. Input Return Loss
versus Output Power
MRF1518T1
3
TYPICAL CHARACTERISTICS, 450 – 520 MHz
,-.
,-.
,-.
"11&$ &"
$ &#'%
"2&#3%
,-.
!" #!$%
/ + '0
"2&#3%
,-.
,-.
"11&$ &"
,-.
/ + '0
)* / + '5
,-.
$
"
#5$%
4
,-.
,-.
/ + '0
)* / + '5
,-.
"2&#3%
"11&$ &"
,-.
4 / 5$
)* / + '5
2 $" #%
Figure 8. Output Power versus Supply Voltage
MRF1518T1
4
,-.
$
"
#5$%
4
Figure 7. Drain Efficiency versus
Biasing Current
,-.
,-.
Figure 6. Output Power versus Biasing Current
&&!"&#!$%
,-.
!" #!$%
Figure 5. Drain Efficiency versus Output Power
&&!"&#!$%
,-.
Figure 4. Gain versus Output Power
,-.
/ + '0
,-.
,-.
,-.
,-.
,-.
,-.
4 / 5$
)* / + '5
2 $" #%
Figure 9. Drain Efficiency versus Supply Voltage
MOTOROLA RF DEVICE DATA
B1, B2
C1, C14
C2, C3, C4, C11,
C12, C13
C5
C6
C7, C18
C8, C15
C9, C16
C10, C17
L1
N1, N2
R1
R2
10 Ω Chip Resistor (0805)
33 kΩ, 1/8 W Resistor
0.476″ x 0.080″ Microstrip
0.724″ x 0.080″ Microstrip
0.348″ x 0.080″ Microstrip
0.048″ x 0.080″ Microstrip
0.175″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.239″ x 0.080″ Microstrip
0.286″ x 0.080″ Microstrip
0.806″ x 0.080″ Microstrip
0.553″ x 0.080″ Microstrip
Glass Teflon, 31 mils, 2 oz. Copper
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Board
Short Ferrite Beads, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
30 pF, 100 mil Chip Capacitor
47 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 µF, 100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 Ω Chip Resistor (0805)
51 Ω, 1/2 W Resistor
Figure 10. 400 – 470 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 – 470 MHz
& &"&&#'%
&&!"&#!$%
,-.
,-.
,-.
/ + '0
/ + '0
(
,-.
(
,-.
(
,-.
+
+
+
+
+
)* !" #!$%
+
Figure 11. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
+
(
!" #!$%
Figure 12. Input Return Loss
versus Output Power
MRF1518T1
5
TYPICAL CHARACTERISTICS, 400 – 470 MHz
,-.
,-.
"11&$ &"
$ &#'%
"2&#3%
,-.
/ + '0
,-.
/ + '0
!" #!$%
Figure 13. Gain versus Output Power
"2&#3%
,-.
/ + '0
)* / + '5
$
"
#5$%
4
,-.
/ + '0
)* / + '5
"2&#3%
,-.
2 $" #%
Figure 17. Output Power versus
Supply Voltage
MRF1518T1
6
,-.
,-.
,-.
4 / 5$
)* / + '5
$
"
#5$%
4
,-.
Figure 16. Drain Efficiency versus
Biasing Current
"11&$ &"
&&!"&#!$%
,-.
,-.
Figure 15. Output Power versus
Biasing Current
!" #!$%
,-.
,-.
,-.
Figure 14. Drain Efficiency versus Output
Power
"11&$ &"
&&!"&#!$%
,-.
,-.
4 / 5$
)* / + '5
2 $" #%
Figure 18. Drain Efficiency versus
Supply Voltage
MOTOROLA RF DEVICE DATA
B1, B2
L4
N1, N2
R1
R2
R3
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
Short Ferrite Beads, Fair Rite Products
(2743021446)
330 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
12 pF, 100 mil Chip Capacitor
43 pF, 100 mil Chip Capacitor
75 pF, 100 mil Chip Capacitors
10 µF, 50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1 µF, 100 mil Chip Capacitors
75 pF, 100 mil Chip Capacitor
13 pF, 100 mil Chip Capacitor
26 nH, 4 Turn, Coilcraft
5 nH, 2 Turn, Coilcraft
33 nH, 5 Turn, Coilcraft
C1, C13
C2, C4, C11
C3
C5
C6, C17
C7, C14
C8, C15
C9, C16
C10
C12
L1
L2
L3
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15 W Chip Resistor (0805)
56 W, 1/4 W Carbon Resistor
100 W Chip Resistor (0805)
33 kW, 1/8 W Carbon Resistor
0.115″ x 0.080″ Microstrip
0.255″ x 0.080″ Microstrip
1.037″ x 0.080″ Microstrip
0.192″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.125″ x 0.080″ Microstrip
0.962″ x 0.080″ Microstrip
0.305″ x 0.080″ Microstrip
0.155″ x 0.080″ Microstrip
Glass Teflon, 31 mils, 2 oz. Copper
Figure 19. 135 – 175 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 135 – 175 MHz
/ + '0
,-.
& &"&&#'%
&&!"&#!$%
,-.
,-.
/ + '0
+
+
+
)* !" #!$%
Figure 20. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
+
(
(
(
(
,-.
,-.
,-.
!" #!$%
Figure 21. Input Return Loss
versus Output Power
MRF1518T1
7
TYPICAL CHARACTERISTICS, 135 – 175 MHz
,-.
,-.
,-.
"11&$ &"
$ &#'%
"2&#3%
!" #!$%
/ + '0
,-.
/ + '0
)* / + '5
4 $ " #5$%
,-.
,-.
"2&#3%
4 / 5$
)* / + '5
2 $" #%
Figure 26. Output Power versus
Supply Voltage
MRF1518T1
8
,-.
,-.
,-.
Figure 25. Drain Efficiency versus
Biasing Current
,-.
/ + '0
)* / + '5
"11&$ &"
&&!"&#!$%
4 $ " #5$%
Figure 24. Output Power versus
Biasing Current
!" #!$%
,-.
,-.
Figure 23. Drain Efficiency versus Output
Power
"2&#3%
,-.
"11&$ &"
&&!"&#!$%
,-.
Figure 22. Gain versus Output Power
,-.
/ + '0
,-.
,-.
,-.
4 / 5$
)* / + '5
2 $" #%
Figure 27. Drain Efficiency versus
Supply Voltage
MOTOROLA RF DEVICE DATA
/ Ω
1 / ,-.
)*
6
1 / ,-.
1 / ,-.
)*
6
1 / ,-.
1/
,-.
6
1/
,-.
/ + 4 / 5$ / !
/ + 4 / 5$ / !
Zin
/ Ω
)*
/ + 4 / 5$ / !
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
f
MHz
Zin
Ω
ZOL*
Ω
450
4.9 +j2.85
6.42 +j3.23
400
4.28 +j2.36
4.41 +j0.67
135
18.31 –j0.76
8.97 +j2.62
470
4.85 +j3.71
4.59 +j3.61
440
6.45 +j5.13
4.14 +j2.53
155
17.72 +j1.85
9.69 +j2.81
500
4.63 +j3.84
4.72 +j3.12
470
5.91 +j3.34
3.92 +j4.02
175
18.06 +j5.23
7.94 +j1.14
520
3.52 +j3.92
3.81 +j3.27
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 82 pF capacitor in
series with gate. (See Figure 1).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 47 pF capacitor in
series with gate. (See Figure 10).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 43 pF capacitor in
series with gate. (See Figure 19).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
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7
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Z
in
Z
*
OL
Figure 28. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF1518T1
9
Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc)
IDQ = 150 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.88
–148
18.91
99
0.033
11
0.67
–144
100
0.85
–163
9.40
86
0.033
–6
0.66
–158
200
0.85
–170
4.47
73
0.026
–17
0.69
–162
300
0.87
–171
2.72
64
0.025
–28
0.74
–163
400
0.88
–172
1.85
56
0.021
–21
0.79
–164
500
0.90
–173
1.35
52
0.019
–30
0.83
–165
600
0.92
–173
1.04
47
0.014
–26
0.85
–167
700
0.93
–174
0.83
44
0.015
–39
0.88
–168
800
0.94
–175
0.68
39
0.014
–31
0.90
–169
900
0.94
–175
0.55
36
0.010
–41
0.91
–170
1000
0.96
–176
0.46
30
0.011
–38
0.95
–170
IDQ = 800 mA
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.90
–159
20.80
97
0.020
14
0.73
–162
100
0.88
–169
10.35
88
0.018
1
0.74
–169
200
0.88
–174
5.09
79
0.017
–9
0.75
–171
300
0.89
–175
3.23
73
0.015
–18
0.77
–171
400
0.89
–175
2.30
67
0.015
–17
0.80
–171
500
0.90
–176
1.74
63
0.014
–22
0.82
–170
600
0.91
–176
1.39
59
0.014
–19
0.83
–171
700
0.92
–176
1.16
55
0.009
–23
0.85
–171
800
0.93
–176
0.96
50
0.011
–14
0.87
–172
900
0.94
–177
0.80
46
0.007
4
0.88
–173
1000
0.94
–177
0.67
41
0.010
–15
0.89
–173
IDQ = 1.5 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
50
0.91
–159
20.18
97
0.015
11
0.73
–165
100
0.89
–169
10.05
89
0.016
–5
0.74
–171
200
0.88
–174
4.93
80
0.015
–3
0.75
–172
300
0.89
–175
3.14
73
0.014
–14
0.78
–172
400
0.89
–176
2.24
67
0.014
–20
0.80
–171
500
0.90
–176
1.70
64
0.014
–22
0.82
–170
600
0.92
–176
1.36
59
0.010
–16
0.84
–171
700
0.92
–176
1.13
55
0.013
–10
0.85
–171
800
0.93
–177
0.94
50
0.008
–13
0.87
–172
900
0.94
–177
0.78
46
0.013
–26
0.87
–173
1000
0.94
–178
0.65
41
0.007
8
0.87
–172
MRF1518T1
10
MOTOROLA RF DEVICE DATA
APPLICATIONS INFORMATION
DESIGN CONSIDERATIONS
This device is a common–source, RF power, N–Channel
enhancement mode, Lateral Metal–Oxide Semiconductor
Field–Effect Transistor (MOSFET). Motorola Application
Note AN211A, “FETs in Theory and Practice”, is suggested
reading for those not familiar with the construction and characteristics of FETs.
This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and
reel capability for fully automated pick and placement of
parts. However, care should be taken in the design process
to insure proper heat sinking of the device.
The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between all three terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance
from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer
(Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on
data sheets are shown below. The Ciss can be specified in
two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate.
In the latter case, the numbers are lower. However, neither
method represents the actual operating conditions in RF applications.
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DRAIN CHARACTERISTICS
One critical figure of merit for a FET is its static resistance
in the full–on condition. This on–resistance, RDS(on), occurs
in the linear region of the output characteristic and is specified at a specific gate–source voltage and drain current. The
MOTOROLA RF DEVICE DATA
drain–source voltage under these conditions is termed
VDS(on). For MOSFETs, VDS(on) has a positive temperature
coefficient at high temperatures because it contributes to the
power dissipation within the device.
BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not
recommended and may result in possible damage to the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The DC input resistance is very high – on the order of 109 Ω
— resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage to
the gate greater than the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on
the input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended.
Using a resistor to keep the gate–to–source impedance low
also helps dampen transients and serves another important
function. Voltage transients on the drain can be coupled to
the gate through the parasitic gate–drain capacitance. If the
gate–to–source impedance and the rate of voltage change
on the drain are both high, then the signal coupled to the gate
may be large enough to exceed the gate–threshold voltage
and turn the device on.
DC BIAS
Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the
source. RF power FETs operate optimally with a quiescent
drain current (IDQ), whose value is application dependent.
This device was characterized at IDQ = 150 mA, which is the
suggested value of bias current for typical applications. For
special applications such as linear amplification, IDQ may
have to be selected to optimize the critical parameters.
The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may
require a more elaborate bias system.
GAIN CONTROL
Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate,
thus facilitating applications such as manual gain control,
ALC/AGC and modulation systems. This characteristic is
very dependent on frequency and load line.
MRF1518T1
11
MOUNTING
The specified maximum thermal resistance of 2°C/W assumes a majority of the 0.065″ x 0.180″ source contact on
the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Motorola Application
Note AN4005/D, “Thermal Management and Mounting Method for the PLD–1.5 RF Power Surface Mount Package,” and
Engineering Bulletin EB209/D, “Mounting Method for RF
Power Leadless Surface Mount Transistor” for additional information.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Motorola Application Note AN721, “Impedance Matching
Networks Applied to RF Power Transistors.” Large–signal
MRF1518T1
12
impedances are provided, and will yield a good first pass
approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region.
Two–port stability analysis with this device’s
S–parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See
Motorola Application Note AN215A, “RF Small–Signal
Design Using Two–Port Parameters” for a discussion of two
port network theory and stability.
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF1518T1
13
NOTES
MRF1518T1
14
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF1518T1
15
PACKAGE DIMENSIONS
L
R
C
2
A F
N K
G
Q
S
ZONE V
+
+
+
+
H
1
D
B
+
+ U
ZONE X
4
3
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉ
ÉÉÉ
10_DRAFT
P
ZONE W
+
+
+
+ J
E
0.89 (0.035) X 45 _ "5 _
RESIN BLEED/FLASH ALLOWABLE
inches
mm
SOLDER FOOTPRINT
2" A
+
+
+
+
$ $"
"
"
"A
+ ," $ "$ " $
2+ , +
+ ," A + " ""B $- $!$" " !
$ C+
CASE 466–02
ISSUE B
(PLD–1.5)
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN
MAX
+
+
+
+
+
+ + + +
+
+
+
+ + +
+
+
+
+
+
+
+
+ +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
MILLIMETERS
MIN
MAX
+
+
+ +
+
+
+ +
+
+
+
+
+
+ +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+ +
+ +
+
+
+
+
+
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E Motorola, Inc. 2002.
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HOME PAGE: http://www.motorola.com/semiconductors/
MRF1518T1
16
◊
MRF1518/D
MOTOROLA RF DEVICE DATA