BZX384-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • The Zener voltages are graded according e3 to the international E 24 standard • Standard Zener voltage tolerance is ± 5 %; Replace "C" with "B" for ± 2 % tolerance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 20145 Mechanical Data Case: SOD323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Power dissipation 1) Symbol Value Unit Ptot 2001) mW Symbol Value Unit RthJA 6501) K/W Device on fiberglass substrate Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Tj 150 °C Tstg - 65 to + 150 °C Valid that electrodes are kept at ambient temperature Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 1 BZX384-V-Series Vishay Semiconductors Electrical Characteristics Partnumber (1) Dynamic Resistance Test Current Temperature Test Coefficient of Current Zener Voltage Reverse Leakage Current VZ at IZT1 rzj at IZT1 rzj at IZT2 IZT1 αVZ at IZT1 at IZT2 V Ω Ω mA -4 mA µA V 10 /°C IR at VR min max typ typ min max BZX384C2V4-V W1 2.2 2.6 70 (≤ 100) 275 5 -9 -4 1 50 1 BZX384C2V7-V W2 2.5 2.9 75 (≤ 100) 300 (≤ 600) 5 -9 -4 1 20 1 BZX384C3V0-V W3 2.8 3.2 80 (≤ 95) 325 (≤ 600) 5 -9 -3 1 10 1 BZX384C3V3-V W4 3.1 3.5 85 (≤ 95) 350 (≤ 600) 5 -8 -3 1 5 1 BZX384C3V6-V W5 3.4 3.8 85 (≤ 90) 375 (≤ 600) 5 -8 -3 1 5 1 BZX384C3V9-V W6 3.7 4.1 85 (≤ 90) 400 (≤ 600) 5 -7 -3 1 3 1 BZX384C4V3-V W7 4 4.6 80 (≤ 90) 410 (≤ 600) 5 -6 -1 1 3 1 BZX384C4V7-V W8 4.4 5 50 (≤ 80) 425 (≤ 500) 5 -5 2 1 3 2 BZX384C5V1-V W9 4.8 5.4 40 (≤ 60) 400 (≤ 480) 5 -3 4 1 2 2 BZX384C5V6-V WA 5.2 6 15 (≤ 40) 80 (≤ 400) 5 -2 6 1 1 2 BZX384C6V2-V WB 5.8 6.6 6.0 (≤ 10) 40 (≤ 150) 5 -1 7 1 3 4 BZX384C6V8-V WC 6.4 7.2 6.0 (≤ 15) 30 (≤ 80) 5 2 7 1 2 4 BZX384C7V5-V WD 7 7.9 6.0 (≤ 15) 30 (≤ 80) 5 3 7 1 1 5 BZX384C8V2-V WE 7.7 8.7 6.0 (≤ 15) 40 (≤ 80) 5 4 7 1 0.7 5 BZX384C9V1-V WF 8.5 9.6 6.0 (≤ 15) 40 (≤ 100) 5 5 8 1 0.5 6 BZX384C10-V WG 9.4 10.6 8.0 (≤ 20) 50 (≤ 150) 5 5 8 1 0.2 7 BZX384C11-V WH 10.4 11.6 10 (≤ 20) 50 (≤ 150) 5 5 9 1 0.1 8 BZX384C12-V WI 11.4 12.7 10 (≤ 25) 50 (≤ 150) 5 6 9 1 0.1 8 BZX384C13-V WK 12.4 14.1 10 (≤ 30) 50 (≤ 170) 5 7 9 1 0.1 8 BZX384C15-V WL 13.8 15.6 10 (≤ 30) 50 (≤ 200) 5 7 9 1 0.05 0.7 VZnom. BZX384C16-V WM 15.3 17.1 10 (≤ 40) 50 (≤ 200) 5 8 9.5 1 0.05 0.7 VZnom. BZX384C18-V WN 16.8 19.1 10 (≤ 45) 50 (≤ 225) 5 8 9.5 1 0.05 0.7 VZnom. BZX384C20-V WO 18.8 21.2 15 (≤ 55) 60 (≤ 225) 5 8 10 1 0.05 0.7 VZnom. BZX384C22-V WP 20.8 23.3 20 (≤ 55) 60 (≤ 250) 5 8 10 1 0.05 0.7 VZnom. BZX384C24-V WR 22.8 25.6 25 (≤ 70) 60 (≤ 250) 5 8 10 1 0.05 0.7 VZnom. BZX384C27-V WS 25.1 28.9 25 (≤ 80) 65 (≤ 300) 2 8 10 0.5 0.05 0.7 VZnom. BZX384C30-V WT 28 32 30 (≤ 80) 70 (≤ 300) 2 8 10 0.5 0.05 0.7 VZnom. BZX384C33-V WU 31 35 35 (≤ 80) 75 (≤ 325) 2 8 10 0.5 0.05 0.7 VZnom. BZX384C36-V WW 34 38 35 (≤ 90) 80 (≤ 350) 2 8 10 0.5 0.05 0.7 VZnom. BZX384C39-V WX 37 41 40 (≤ 130) 80 (≤ 350) 2 10 12 0.5 0.05 0.7 VZnom. BZX384C43-V WY 40 46 45 (≤ 150) 85 (≤ 375) 2 10 12 0.5 0.05 0.7 VZnom. BZX384C47-V WZ 44 50 50 (≤ 170) 85 (≤ 375) 2 10 12 0.5 0.05 0.7 VZnom. BZX384C51-V X1 48 54 60 (≤ 180) 85 (≤ 400) 2 10 12 0.5 0.05 0.7 VZnom. BZX384C56-V X2 52 60 70 (≤ 200) 100 (≤ 425) 2 9 11 0.5 0.05 0.7 VZnom. BZX384C62-V X3 58 66 80 (≤ 215) 100 (≤ 450) 2 9 12 0.5 0.05 0.7 VZnom. BZX384C68-V X4 64 72 90 (≤ 240) 150 (≤ 475) 2 10 12 0.5 0.05 0.7 VZnom. BZX384C75-V X5 70 79 95 (≤ 255) 170 (≤ 500) 2 10 12 0.5 0.05 0.7 VZnom. Measured with pulses tp = 5 ms www.vishay.com 2 Marking Zener Voltage Code Range Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Zener Voltage Code Range Dynamic Resistance Test Current Temperature Test Coefficient of Current Zener Voltage Reverse Leakage Current VZ at IZT1 rzj at IZT1 rzj at IZT2 IZT1 αVZ at IZT1 atIZT2 V Ω Ω mA -4 mA µA V 10 /°C IR at VR min max typ typ min max BZX384B2V4-V W1 2.35 2.45 70 (≤ 100) 275 5 -9 -4 1 50 1 BZX384B2V7-V W2 2.65 2.75 75 (≤ 100) 300 (≤ 600) 5 -9 -4 1 20 1 BZX384B3V0-V W3 2.94 3.06 80 (≤ 95) 325 (≤ 600) 5 -9 -3 1 10 1 BZX384B3V3-V W4 3.23 3.37 85 (≤ 95) 350 (≤ 600) 5 -8 -3 1 5 1 1 BZX384B3V6-V W5 3.53 3.67 85 (≤ 90) 375 (≤ 600) 5 -8 -3 1 5 BZX384B3V9-V W6 3.82 3.98 85 (≤ 90) 400 (≤ 600) 5 -7 -3 1 3 1 BZX384B4V3-V W7 4.21 4.39 80 (≤ 90) 410 (≤ 600) 5 -6 -1 1 3 1 BZX384B4V7-V W8 4.61 4.79 50 (≤ 80) 425 (≤ 500) 5 -5 2 1 3 2 BZX384B5V1-V W9 5.00 5.20 40 (≤ 60) 400 (≤ 480) 5 -3 4 1 2 2 BZX384B5V6-V WA 5.49 5.71 15 (≤ 40) 80 (≤ 400) 5 -2 6 1 1 2 BZX384B6V2-V WB 6.08 6.32 6.0 (≤ 10) 40 (≤ 150) 5 -1 7 1 3 4 BZX384B6V8-V WC 6.66 6.94 6.0 (≤ 15) 30 (≤ 80) 5 2 7 1 2 4 BZX384B7V5-V WD 7.35 7.65 6.0 (≤ 15) 30 (≤ 80) 5 3 7 1 1 5 BZX384B8V2-V WE 8.04 8.36 6.0 (≤ 15) 40 (≤ 80) 5 4 7 1 0.7 5 BZX384B9V1-V WF 8.92 9.28 6.0 (≤ 15) 40 (≤ 100) 5 5 8 1 0.5 6 BZX384B10-V WG 9.80 10.2 8.0 (≤ 20) 50 (≤ 150) 5 5 8 1 0.2 7 BZX384B11-V WH 10.8 11.2 10 (≤ 20) 50 (≤ 150) 5 5 9 1 0.1 8 BZX384B12-V WI 11.8 12.2 10 (≤ 25) 50 (≤ 150) 5 6 9 1 0.1 8 BZX384B13-V WK 12.7 13.3 10 (≤ 30) 50 (≤ 170) 5 7 9 1 0.1 8 BZX384B15-V WL 14.7 15.3 10 (≤ 30) 50 (≤ 200) 5 7 9 1 0.05 0.7 VZnom. BZX384B16-V WM 15.7 16.3 10 (≤ 40) 50 (≤ 200) 5 8 9.5 1 0.05 0.7 VZnom. BZX384B18-V WN 17.6 18.4 10 (≤ 45) 50 (≤ 225) 5 8 9.5 1 0.05 0.7 VZnom. BZX384B20-V WO 19.6 20.4 15 (≤ 55) 60 (≤ 225) 5 8 10 1 0.05 0.7 VZnom. BZX384B22-V WP 21.6 22.4 20 (≤ 55) 60 (≤ 250) 5 8 10 1 0.05 0.7 VZnom. BZX384B24-V WR 23.5 24.5 25 (≤ 70) 60 (≤ 250) 5 8 10 1 0.05 0.7 VZnom. BZX384B27-V WS 26.5 27.5 25 (≤ 80) 65 (≤ 300) 2 8 10 0.5 0.05 0.7 VZnom. BZX384B30-V WT 29.4 30.6 30 (≤ 80) 70 (≤ 300) 2 8 10 0.5 0.05 0.7 VZnom. BZX384B33-V WU 32.3 33.7 35 (≤ 80) 75 (≤ 325) 2 8 10 0.5 0.05 0.7 VZnom. BZX384B36-V WW 35.3 36.7 35 (≤ 90) 80 (≤ 350) 2 8 10 0.5 0.05 0.7 VZnom. BZX384B39-V WX 38.2 39.8 40 (≤ 130) 80 (≤ 350) 2 10 12 0.5 0.05 0.7 VZnom. BZX384B43-V WY 42.1 43.9 45 (≤ 150) 85 (≤ 375) 2 10 12 0.5 0.05 0.7 VZnom. BZX384B47-V WZ 46.1 47.9 50 (≤ 170) 85 (≤ 375) 2 10 12 0.5 0.05 0.7 VZnom. BZX384B51-V X1 50.0 52.0 60 (≤ 180) 85 (≤ 400) 2 10 12 0.5 0.05 0.7 VZnom. BZX384B56-V X2 54.9 57.1 70 (≤ 200) 100 (≤ 425) 2 9 11 0.5 0.05 0.7 VZnom. BZX384B62-V X3 60.8 63.2 80 (≤ 215) 100 (≤ 450) 2 9 12 0.5 0.05 0.7 VZnom. BZX384B68-V X4 66.6 69.4 90 (≤ 240) 150 (≤ 475) 2 10 12 0.5 0.05 0.7 VZnom. BZX384B75-V X5 73.5 76.5 95 (≤ 255) 170 (≤ 500) 2 10 12 0.5 0.05 0.7 VZnom. Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 3 BZX384-V-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified mA 103 1000 IF 10 rzj TJ = 100 °C 1 TJ = 25 °C 5 4 3 2 102 100 10-1 5 4 3 TJ = 25 °C 2 10-2 100 10-3 2.7 3.6 4.7 5.1 5 4 3 10-4 2 10-5 0 0.2 0.4 0.6 0.8 1V VF 18114 5.6 1 0.1 2 1 5 2 5 10 18117 Figure 1. Forward characteristics 2 5 100 mA IZ Figure 4. Dynamic Resistance vs. Zener Current pF 1000 mW 250 Tj = 25 °C 7 200 5 4 Ctot VR = 1 V 3 Ptot VR = 2 V 2 150 100 7 100 VR = 1 V 5 4 3 50 VR = 2 V 2 10 0 0 100 200 °C 1 Figure 2. Admissible Power Dissipation vs. Ambient Temperature 10 4 5 2 100 V 3 4 5 VZ Ω 100 TJ = 25 °C 7 5 4 3 2 5 4 0.5 102 0.2 7 5 4 3 2 0.1 rzj 0.05 0.02 0.01 15 10-3 10-2 12 2 PI T 10-4 18 10 tp T 6.8/8.2 6.2 1 10-1 1 10s tp Figure 3. Pulse Thermal Resistance vs. Pulse Duration www.vishay.com 27 22 3 tp 2 18116 33 2 5 4 =0 7 5 4 3 1 10-5 3 10 10 4 3 Figure 5. Capacitance vs. Zener Voltage °C/W 103 rthA 2 18193 Tamb 18192 0.1 18119 2 5 1 2 5 10 IZ 2 5 100 mA Figure 6. Dynamic Resistance vs. Zener Current Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors Ω 103 7 5 4 rzj mV/°C 25 Tj = 25 °C 3 Δ VZ ΔTj 47 + 51 43 39 36 2 20 IZ = 15 5 mA 1 mA 20 mA 10 102 7 5 5 4 3 0 2 -5 10 0.1 2 3 4 5 1 18120 2 3 4 5 3 10 4 5 2 100 V 3 4 5 VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage V Ω 103 0.8 rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 25 0.7 15 VZ at IZ = 5 mA 10 0.6 Δ VZ 102 0.5 8 0.4 5 4 3 7 0.3 2 0.2 6.2 5.9 10 0.1 5.6 5 4 3 0 negative 2 positive 5.1 -1 1 2 3 4 5 10 18121 2 3 4 5 0 100 V Figure 8. Thermal Differential Resistance vs. Zener Voltage 20 40 60 18124 VZ at IZ = 5 mA 4.7 3.6 - 0.2 1 80 100 120 140 C Tj Figure 11. Change of Zener Voltage vs. Junction Temperature Ω 100 V 9 7 8 5 4 rzj 2 18135 IZ Figure 7. Dynamic Resistance vs. Zener Current rzth 1 10 mA VZ at IZ = 2 mA 7 3 Δ VZ 2 51 6 5 10 43 4 7 36 3 5 4 2 3 1 2 0 Tj = 25 °C IZ = 5 mA 1 1 2 3 18122 4 5 10 2 3 4 5 100 V VZ Figure 9. Dynamic Resistance vs. Zener Voltage Document Number 85764 Rev. 1.6, 17-May-06 IZ = 2 mA -1 0 18194 20 40 60 80 100 120 140 °C Tj Figure 12. Change of Zener Voltage vs. Junction Temperature www.vishay.com 5 BZX384-V-Series Vishay Semiconductors mA 50 mV/°C 100 Tj = 25 °C IZ = 5 mA Δ VZ ΔTj 3.9 5.6 6.8 4.7 3.3 40 80 lz 8.2 60 30 40 20 20 10 Test Current IZ 5 mA 0 0 0 20 60 40 18195 80 0 100 V VZ at IZ = 2 mA 1 V 1.6 1.2 3 4 5 6 7 8 Figure 16. Breakdown Characteristics 10 Tj = 25 °C 12 lz 1 10 V 9 VZ mA 30 Δ VZ = rzth x IZ IZ = 5 mA VZ ≥ 27 V; IZ = 2 mA 1.4 2 18111 Figure 13. Temperature Dependence of Zener Voltage vs. Zener Voltage Δ VZ 2.7 15 20 18 0.8 22 0.6 0.4 27 10 0.2 33 Test Current IZ 5 mA 0 36 - 0.2 0 - 0.4 1 2 3 4 5 10 2 3 4 5 0 100 V VZ at IZ = 5 mA 18196 10 Figure 17. Breakdown Characteristics mA 10 ΔVZ = rzth x IZ Tj = 25 °C 51 39 4 8 3 47 43 lz Δ VZ 40 V 30 VZ Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage V 5 20 18112 6 IZ = 5 mA 4 2 Test Current IZ 2 mA 1 2 IZ = 2.5 mA 0 0 0 18160 20 40 60 80 100 V VZ at IZ = 5 mA Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 0 18191 10 20 30 40 50 60 70 80 90 100 V VZ Figure 18. Breakdown Characteristics Document Number 85764 Rev. 1.6, 17-May-06 BZX384-V-Series Vishay Semiconductors 0.1 (0.004) max 0.10 (0.004) 0.15 (0.006) 0.8 (0.031) 1.15 (0.045) Package Dimensions in mm (Inches): SOD323 0.25 (0.010) min 1.95 (0.077) 1.60 (0.063) foot print recommendation: 0.6 (0.024) 0.6 (0.024) 1.6 (0.063) 0.6 (0.024) 1.1 (0.043) 2.85 (0.112) 2.50 (0.098) 1.5 (0.059) 0.20 (0.008) 0.40 (0.016) cathode bar Document no.: S8-V-3910.02-001 (4) Rev. 03 - Date: 08.November 2004 17443 Document Number 85764 Rev. 1.6, 17-May-06 www.vishay.com 7 BZX384-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85764 Rev. 1.6, 17-May-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1