BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 3 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. IDq VDS PL(AV) ηD ACPR (dB) (%) (dBc) 18.5 32 −32[1] 33 −39[2] Mode of operation f Gp (MHz) (mA) (V) (W) 2-carrier W-CDMA 2110 to 2170 950 28 30 1-carrier W-CDMA 2110 to 2170 950 28 33 18.5 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. [2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G22L-130 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 BLF7G22LS-130 (SOT502B) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G22L-130 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF7G22LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF7G22L-130_7G22LS-130 Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 28 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase = 80 °C; PL = 30 W 0.35 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA 1.3 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 5 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 25 29.5 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A - 10 11 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 5.25 A - 0.1 0.16 Ω 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions PL(AV) average output power Gp power gain RLin input return loss ηD drain efficiency ACPR adjacent channel power ratio Min Typ Max Unit - 30 - W PL(AV) = 30 W 17 18.5 - dB PL(AV) = 30 W - −15 −19 dB PL(AV) = 30 W 29 32 - % PL(AV) = 30 W - −31 −28 dBc 7.1 Ruggedness in class-AB operation The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 130 W (CW); f = 2110 MHz. BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 NXP Semiconductors BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance information IDq = 950 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. f (MHz) ZS (Ω) ZL (Ω) 2050 1.3 − j3.6 2.2 − j2.6 2140 1.9 − j4.2 2.0 − j2.6 2230 3.1 − j4.7 1.9 − j2.8 drain ZL gate ZS 001aaf059 Fig 1. BLF7G22L-130_7G22LS-130 Product data sheet Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.3 1 Tone CW 001aal341 19 001aal342 60 Gp (dB) ηD (%) 18 (1) (1) (2) (2) 40 (3) (3) 17 16 20 15 14 0 0 40 80 120 160 0 40 80 PL (W) 160 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (1) f = 2110 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2170 MHz (3) f = 2170 MHz Fig 2. 120 Power gain as a function of load power; typical values Fig 3. Drain efficiency as a function of load power; typical values 001aal352 0 RLin (dB) −10 (1) (2) −20 (3) −30 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 4. Input return loss as a function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.4 1-carrier W-CDMA Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 001aal345 20 Gp (dB) 19 001aal346 60 ηD (%) (3) (2) (1) 40 18 (1) (2) 17 (3) 20 16 15 0 0 30 60 90 0 30 60 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (1) f = 2112.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Fig 5. 90 PL (W) Power gain as a function of load power; typical values Fig 6. 001aal348 0 Drain efficiency as a function of load power; typical values 001aal347 8 PAR (dB) ACPR5M (dBc) (1) (2) 6 (3) −20 (1) 4 (2) (3) −40 2 −60 0 0 30 60 90 0 30 PL (W) VDS = 28 V; IDq = 950 mA. VDS = 28 V; IDq = 950 mA. (1) f = 2112.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2167.5 MHz (3) f = 2167.5 MHz Adjacent channel power ratio (5MHz) as a function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet 90 PL (W) (1) f = 2112.5 MHz Fig 7. 60 Fig 8. Peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.5 2-carrier W-CDMA (5 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 001aal351 20 001aal353 50 ηD (%) Gp (dB) (3) (2) (1) 19 40 (1) 18 (2) 30 (3) 17 20 16 10 15 0 0 10 20 30 40 50 60 PL (W) 0 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. 10 20 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (1) f = 2115 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2165 MHz (3) f = 2165 MHz Fig 9. 30 Power gain as a function of load power; typical values Fig 10. drain efficiency as a function of load power; typical values 001aal354 0 ACPR5M (dBc) −20 (1) (2) (3) −40 −60 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz. (1) f = 2115 MHz (2) f = 2140 MHz (3) f = 2165 MHz Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.6 2-carrier W-CDMA (10 MHz carrier spacing) Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 001aal355 20 001aal356 50 ηD (%) Gp (dB) (3) (2) (1) 19 40 (1) 18 (2) 30 (3) 17 20 16 10 15 0 0 10 20 30 40 50 60 PL (W) 0 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. 10 20 30 (1) f = 2117.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz (3) f = 2162.5 MHz 001aal357 0 ACPR5M (dBc) 60 PL (W) 70 Fig 13. Drain efficiency as a function of load power; typical values 001aal358 0 ACPR10M (dBc) −20 −20 (1) (2) (1) (3) −40 −60 50 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz Fig 12. Power gain as a function of load power; typical values 40 (2) (3) −40 0 10 20 30 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. −60 0 10 20 (1) f = 2117.5 MHz (2) f = 2140 MHz (2) f = 2140 MHz (3) f = 2162.5 MHz (3) f = 2162.5 MHz BLF7G22L-130_7G22LS-130 Product data sheet 40 50 60 PL (W) 70 VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz. (1) f = 2117.5 MHz Fig 14. Adjacent channel power ratio (5 MHz) as a function of load power; typical values 30 Fig 15. Adjacent channel power ratio (10 MHz) as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 7.7 Test circuit C3 C6 R1 C8 C9 C11 C2 C1 C5 BLF7G22LS-130 OUTPUT V1 RO4350 30MIL RSN BLF7G22LS-130 INPUT V1 RO4350 30MIL RSN C4 C7 C10 001aal359 See Table 9 for list of components. The drawing is not to scale. Fig 16. Component layout Table 9. List of components See Figure 16 for component layout. BLF7G22L-130_7G22LS-130 Product data sheet Component Description Value Remarks C1, C2, C3, C4, C5 multilayer ceramic chip capacitor 9.1 pF ATC100B C6, C7 multilayer ceramic chip capacitor 220 nF AVX1206 C8, C9, C10 multilayer ceramic chip capacitor 4.7 μF; 50 V Kemet C11 electrolytic capacitor 220 μF; 63 V BC R1 SMD resistor 6.2 Ω Philips 1206 All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 8. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 17. Package outline SOT502A BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 18. Package outline SOT502B BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 10. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G22L-130_7G22LS-130 v.3 20101118 Product data sheet - BLF7G22LS-130 v.2 Modifications: • Table 1 on page 1: the value for ηD for the 1-carrier W-CDMA signal has been changed. • • • • • • • Table 4 on page 2: drain current has been added to the table. • • Section 7.2 on page 4: added ‘Impedance information’ section Table 4 on page 2: the maximum value of Tj has been changed. Table 7 on page 3: a correction was made to the table description [64 DPCH]. Table 7 on page 3: the symbol for input return loss has been changed. Table 7 on page 3: the minimum value for RLin has been removed. Table 7 on page 3: the values of RLin have been projected on a negative scale. Table 7 on page 3: for ACPR the distinction between the two products has been removed. Section 7.3 on page 5: the graphs have been reorganized and some corrections have been made. • Section 7.4 on page 6: the graphs have been reorganized and some corrections have been made. • Section 7.5 on page 7: the graphs have been reorganized and some corrections have been made. • Section 7.6 on page 8: the graphs have been reorganized and some corrections have been made. BLF7G22L-130_7G22LS-130 v.2 20101004 Product data sheet - BLF7G22LS-130 v.1 BLF7G22LS-130 v.1 20100202 Product data sheet - - BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 BLF7G22L-130; BLF7G22LS-130 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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All rights reserved. 13 of 15 NXP Semiconductors BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF7G22L-130_7G22LS-130 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 18 November 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 NXP Semiconductors BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 2-carrier W-CDMA (5 MHz carrier spacing) . . . 7 2-carrier W-CDMA (10 MHz carrier spacing) . . 8 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 18 November 2010 Document identifier: BLF7G22L-130_7G22LS-130