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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
NPN POWER TRANSISTORS
. COMPLEMENTARY TO THE D41D SERIES
D40D Series
30 - 60 VOLTS
1 AMP, 6.25 WATTS
D40D is a power transistor designed for
various specific and general purpose applications, such as:
output and driver stages of amplifiers operating at frequencies
from DC to greater than 1.0 MHz; series, shunt and switching
regulators; low and high frequency inverters/converters; and
many others.
CASE STYLE TO-202
Features:
• High free-air power dissipation
• NPN complement to D41D PNP
• Low collector saturation voltage (0.5V typ. @ 1.0A lc)
• Excellent linearity
• Fast Switching
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
" [0483-CKO)
TYPE
TERM. 1
TERM !
TERM. 3
TO-HS
EMITTER
BASE
COLLECTOR
TAB
COLLECTOR
maximum ratings (TA = 25°C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak!1)
Base Current — Continuous
Total Power Dissipation @ TA = 25° C
@ TC = 25C
Operating and Storage Junction
Temperature Range
SYMBOL
D40D1, 2
D40D4, 5
D40D7, 8
VCEO
30
45
V CES
45
60
60
75
VEBO
lc
ICM
IB
PD
5
5
5
1
1.5
\5
1
1.5
UNITS
Volts
Volts
Volts
A
.5
.5
.5
A
1.67
6.25
1.67
6.25
1.67
6.25
Watts
TJ.Tstg
-55 to +150
-55 to +150
-55 to +150
°C
R0JA
75
75
75
RWC
TL
20
20
20
+260
+260
+260
°c/w
°c/w
°c
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: '/»" from Case for 5 Seconds
(1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goine
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
TYP
MAX
UNIT
VCEO(sus)
30
45
60
—
—
Volts
'CES
—
off characteristics*1*
Collector-Emitter Sustaining Voltage
D40D1.2
D40D4, 5
D40D7, 8
(lc = 10mA)
Collector Cutoff Current
(VCE = Rated VCEO)
(VCE =• Rated VCES)
Emitter Cutoff Current
(VEB = 5V)
TC = 25° C
Tc = 1 50° C
0.1
pA
1.0
—
'EBO
—
//A
0.1
second breakdown
SEE FIGURE 4
FBSOA
I Second Breakdown with Base Forward Biased
on characteristics
DC Current Gain
(lc = 100mA, VCE = 2V)
D40D1.4, 7
D40D2, 5, 8
D40D1.4, 7
D40D2
D40D5, 8
(IC = 1A,VCE = 2V)
Collector-Emitter Saturation Voltage
(lc = 500mA. IB = 50mA)
50
120
10
20
10
hFE
"FE
D40D1 , 2, 4, 5
D40D7, 8
Base-Emitter Saturation Voltage
(lc = 500mA, IB = 50mA)
150
360
—
E
~
\
0.5
1.0
Volts
—
vCE(sat)
—
•
vBE(sat)
—
—
1.5
Volts
—
8
—
PF
—
200
—
MHz
. +{
—
25
—
nS
ts
—
—
200
—
50
—
dynamic characteristics
Collector Capacitance
~
(VCB = 10V, f = 1M|Hz)
CBO
Current-Gain — Bandwidth Product
(lc = 20mA, VCE = 10V)
f
'T
switching characteristics
Resistive Load
Delay Time +
Rise Time
(
Storage Time
= 1A
_
,
- ,
3QV (
m
= 0 1A
^
Fall Time
______^
(1)Pijlse Test PW = 300ms Duty Cycle < 2%.
lf
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fu
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x
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10
«
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.
[e-eoiAieron cuM«mT-»*
FIG. 1
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5
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FIG. 2
COLLICTM CtMWN^a*