High Voltage Latch-Up Proof, Single SPDT Switch ADG5419 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS Latch-up immune under all circumstances Human body model (HBM) ESD rating: 8 kV Low on resistance: 13.5 Ω ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation 48 V supply maximum ratings Fully specified at ±15 V, ±20 V, +12 V, and +36 V VDD to VSS analog signal range SA ADG5419 D SB IN EN SWITCHES SHOWN FOR A LOGIC 0 INPUT. APPLICATIONS 11370-001 DECODER Figure 1. 8-Lead LFCSP High voltage signal routing Automatic test equipment Analog front-end circuits Precision data acquisition Industrial instrumentation Amplifier gain select Relay replacement ADG5419 SA D SB SWITCHES SHOWN FOR A LOGIC 0 INPUT. 11370-101 IN Figure 2. 8-Lead MSOP GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG5419 is a monolithic industrial, complementary metal oxide semiconductor (CMOS) analog switch containing a latchup immune single-pole/double-throw (SPDT) switch. 1. Each switch conducts equally well in both directions when on, and each switch has an input signal range that extends to the power supplies. In the off condition, signal levels up to the supplies are blocked. The ADG5419 exhibits break-before-make switching action for use in multiplexer applications. The ultralow on resistance and on-resistance flatness of these switches make them ideal solutions for data acquisition and gain switching applications where low distortion is critical. The latch-up immune construction and high ESD rating make these switches more robust in harsh environments. Rev. A 2. 3. 4. 5. 6. 7. Trench isolation guards against latch-up. A dielectric trench separates the P channel and N channel transistors, thereby preventing latch-up even under severe overvoltage conditions. Low RON of 13.5 Ω. Dual-supply operation. For applications where the analog signal is bipolar, the ADG5419 can be operated from dual supplies up to ±22 V. Single-supply operation. For applications where the analog signal is unipolar, the ADG5419 can be operated from a single-rail power supply up to 40 V. 3 V logic compatible digital inputs: VINH = 2.0 V, VINL = 0.8 V. No VL logic power supply required. Available in 8-lead MSOP and 8-lead, 2 mm × 3 mm LFCSP packages. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2013–2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADG5419 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Continuous Current per Channel, Sx or D ................................7 Applications ....................................................................................... 1 Absolute Maximum Ratings ............................................................8 Functional Block DiagramS ............................................................ 1 ESD Caution...................................................................................8 General Description ......................................................................... 1 Pin Configurations and Function Descriptions ............................9 Product Highlights ........................................................................... 1 Typical Performance Characteristics ........................................... 10 Revision History ............................................................................... 2 Test Circuits ..................................................................................... 14 Specifications..................................................................................... 3 Terminology .................................................................................... 17 ±15 V Dual Supply ....................................................................... 3 Applications Information .............................................................. 18 ±20 V Dual Supply ....................................................................... 4 Trench Isolation .......................................................................... 18 12 V Single Supply ........................................................................ 5 Outline Dimensions ....................................................................... 19 36 V Single Supply ........................................................................ 6 Ordering Guide .......................................................................... 19 REVISION HISTORY 3/15—Rev. 0 to Rev. A Added 8-Lead LFCSP ......................................................... Universal Added Figure 1; Renumbered Sequentially .................................. 1 Changes to Table 1 ............................................................................ 3 Changes to Table 2 ............................................................................ 4 Changes to Table 3 ............................................................................ 5 Changes to Table 4 ............................................................................ 6 Changed Continuous Current, Sx or D to 8-Lead MSOP, Table 5 ................................................................................................ 7 Added Figure 3 and Table 8; Renumbered Sequentially ............. 9 Changes to Table 7 ............................................................................ 9 Changes to Figure 5 ........................................................................ 10 Added Figure 23 ............................................................................. 13 Changes to Figure 24 Caption ...................................................... 14 Added Figure 25 and Figure 26 .................................................... 14 Deleted Figure 27; Renumbered Sequentially ............................ 14 Added Figure 32 and Figure 33 .................................................... 15 Changes to Terminology Section ................................................. 17 Added Figure 37, Outline Dimensions ........................................ 19 Changes to Ordering Guide .......................................................... 19 9/13—Revision 0: Initial Version Rev. A | Page 2 of 19 Data Sheet ADG5419 SPECIFICATIONS ±15 V DUAL SUPPLY VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Drain Off Leakage, ID (Off) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25°C 13.5 15 0.1 0.8 1.8 2.2 −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments VDD to VSS V Ω typ Ω max Ω typ VS = ±10 V, IS = −10 mA; see Figure 27 VDD = +13.5 V, VSS = −13.5 V VS = ±10 V, IS = −10 mA 19 23 1.3 1.4 2.7 3.1 ±0.1 ±0.25 ±0.1 ±0.4 ±0.1 ±1 ±10 ±4 ±10 ±0.4 ±4 nA typ VDD = +16.5 V, VSS = −16.5 V VS = ±10 V, VD = 10 V; see Figure 24 and Figure 25 nA max nA typ nA max nA typ nA max 2.0 0.8 V min V max μA typ μA max pF typ 0.002 6 Break-Before-Make Time Delay, tD 217 260 179 212 153 176 86 Charge Injection, QINJ Off Isolation Channel-to-Channel Crosstalk Total Harmonic Distortion + Noise 130 −60 −80 0.01 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ % typ 190 −0.8 12 23 55 MHz typ dB typ pF typ pF typ pF typ tON (EN) tOFF (EN) 310 336 261 298 195 209 45 −3 dB Bandwidth Insertion Loss CS (Off) CD (Off) CD (On), CS (On) POWER REQUIREMENTS IDD ISS 45 55 0.001 VDD/VSS 1 VS = ±10 V, IS = −10 mA ±10 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION Ω max Ω typ Ω max 70 1 ±9/±22 Guaranteed by design; not subject to production test. Rev. A | Page 3 of 19 μA typ μA max μA typ μA max V min/V max VS = ±10 V, VD = 10 V; see Figure 25 VS = VD = ±10 V; see Figure 24 and Figure 26 VIN = VGND or VDD RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 32 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 34 VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 1 kΩ, 15 V p-p, f = 20 Hz to 20 kHz; see Figure 30 RL = 50 Ω, CL = 5 pF; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = +16.5 V, VSS = −16.5 V Digital inputs = 0 V or VDD Digital inputs = 0 V or VDD GND = 0 V ADG5419 Data Sheet ±20 V DUAL SUPPLY VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Drain Off Leakage, ID (Off) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25°C 12.5 14 0.1 0.8 2.3 2.7 −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments VDD to VSS V Ω typ Ω max Ω typ VS = ±15 V, IS = −10 mA; see Figure 27 VDD = +18 V, VSS = −18 V VS = ±15 V, IS = −10 mA 18 22 1.3 1.4 3.3 3.7 ±0.1 ±0.25 ±0.1 ±0.4 ±0.1 ±1 ±10 ±4 ±10 ±0.4 ±4 nA typ VDD = +22 V, VSS = −22 V VS = ±15 V, VD = 15 V; see Figure 24 and Figure 25 nA max nA typ nA max nA typ nA max 2.0 0.8 V min V max μA typ μA max pF typ 0.002 6 Break-Before-Make Time Delay, tD 200 235 199 239 157 185 77 Charge Injection, QINJ Off Isolation Channel-to-Channel Crosstalk Total Harmonic Distortion + Noise 160 −60 −80 0.01 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ % typ 190 −0.7 11 22 55 MHz typ dB typ pF typ pF typ pF typ tON (EN) tOFF (EN) 279 294 300 344 208 227 46 −3 dB Bandwidth Insertion Loss CS (Off) CD (Off) CD (On), CS (On) POWER REQUIREMENTS IDD ISS 50 70 0.001 VDD/VSS 1 VS = ±15 V, IS = −10 mA ±10 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION Ω max Ω typ Ω max 110 1 ±9/±22 Guaranteed by design; not subject to production test. Rev. A | Page 4 of 19 μA typ μA max μA typ μA max V min/V max VS = ±15 V, VD = 15 V; see Figure 25 VS = VD = ±15 V; see Figure 24 and Figure 26 VIN = VGND or VDD RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 32 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 10 V; see Figure 34 VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 1 kΩ, 20 V p-p, f = 20 Hz to 20 kHz; see Figure 30 RL = 50 Ω, CL = 5 pF; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = +22 V, VSS = −22 V Digital inputs = 0 V or VDD Digital inputs = 0 V or VDD GND = 0 V Data Sheet ADG5419 12 V SINGLE SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Drain Off Leakage, ID (Off) Channel On Leakage, ID (On), IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25°C −40°C to +85°C −40°C to +125°C Unit 0 V to VDD V Ω typ 26 38 44 Ω max Ω typ 1 5.5 6.8 1.5 1.6 VS = 0 V to 10 V, IS = −10 mA 8.3 12.3 Ω max Ω typ Ω max nA typ VDD = +13.2 V, VSS = 0 V VS = 1 V to 10 V, VD = 10 V to 1 V; see Figure 24 and Figure 25 ±0.1 ±0.25 ±0.1 ±0.4 ±0.1 ±1 ±10 ±4 ±10 ±0.4 ±4 ±10 nA max 2.0 0.8 V min V max μA typ μA max pF typ 0.002 6 Break-Before-Make Time Delay, tD Charge Injection, QINJ 55 ns typ ns max ns typ ns max ns typ ns max ns typ ns min pC typ Off Isolation −60 dB typ Channel-to-Channel Crosstalk −80 dB typ Total Harmonic Distortion + Noise 0.03 % typ −3 dB Bandwidth Insertion Loss 170 −1.7 MHz typ dB typ 15 29 50 pF typ pF typ pF typ tOFF (EN) 508 567 526 612 528 611 97 CS (Off) CD (Off) CD (On), CS (On) POWER REQUIREMENTS IDD 40 50 VDD 1 nA max nA typ nA max nA typ 333 414 327 410 166 200 176 tON (EN) VS = 0 V to 10 V, IS = −10 mA; see Figure 27 VDD = 10.8 V, VSS = 0 V VS = 0 V to 10 V, IS = −10 mA 30 0.1 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION Test Conditions/Comments 65 9/40 Guaranteed by design; not subject to production test. Rev. A | Page 5 of 19 μA typ μA max V min/V max VS = 1V to10 V, VD = 10 V to 1V; see Figure 25 VS = VD = 1 V to 10 V; see Figure 24 and Figure 26 VIN = VGND or VDD RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 32 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 8 V; see Figure 34 VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 1 kΩ, 6 V p-p, f = 20 Hz to 20 kHz; see Figure 30 RL = 50 Ω, CL = 5 pF; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 VS = 6 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 6 V, f = 1 MHz VDD = 13.2 V Digital inputs = 0 V or VDD GND = 0 V, VSS = 0 V ADG5419 Data Sheet 36 V SINGLE SUPPLY VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted. Table 4. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Drain Off Leakage, ID (Off) Channel On Leakage, ID (On), IS (On) 25°C −40°C to +125°C Unit 0 V to VDD V Ω typ 14.5 tON (EN) tOFF (EN) Break-Before-Make Time Delay, tD 24 Ω max Ω typ 0.8 3.5 4.3 1.3 1.4 VS = 0 V to 30 V, IS = −10 mA 5.5 6.5 Ω max Ω typ Ω max nA typ VDD = 39.6 V, VSS = 0 V VS = 1 V to 30 V, VD = 30 V to 1 V; see Figure 24 and Figure 25 ±0.1 ±0.25 ±0.1 ±0.4 ±0.1 ±1 ±10 ±4 ±10 ±4 V min V max μA typ μA max pF typ VIN = VGND or VDD ns typ ns max ns typ ns max ns typ ns max RL = 300 Ω, CL = 35 pF VS = 18 V; see Figure 32 RL = 300 Ω, CL = 35 pF VS = 18 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 18 V; see Figure 33 RL = 300 Ω, CL = 35 pF VS = 18 V; see Figure 34 VS = 18 V, RS = 0 Ω, CL = 1 nF; see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 RL = 1 kΩ, 18 V p-p, f = 20 Hz to 20 kHz; see Figure 30 RL = 50 Ω, CL = 5 pF; see Figure 31 RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 VS = 18 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 18 V, f = 1 MHz VDD = 39.6 V Digital inputs = 0 V or VDD 286 310 279 315 284 315 80 Charge Injection, QINJ 135 ns typ ns min pC typ Off Isolation −60 dB typ Channel-to-Channel Crosstalk −80 dB typ Total Harmonic Distortion + Noise 0.01 % typ −3 dB Bandwidth Insertion Loss 170 −1 MHz typ dB typ CS (Off) CD (Off) CD (On), CS (On) POWER REQUIREMENTS IDD 14 26 50 pF typ pF typ pF typ VDD VS = VD = 1 V to 30 V; see Figure 24 and Figure 26 2.0 0.8 6 80 100 VS = 1V to 30 V, VD = 30 V to 1V; see Figure 25 nA max 0.002 216 250 199 232 160 193 nA max nA typ nA max nA typ ±10 47 1 VS = 0 V to 30 V, IS = −10 mA; see Figure 27 VDD = 32.4 V, VSS = 0 V VS = 0 V to 30 V, IS = −10 mA 20 ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION Test Conditions/Comments 16 0.1 ±0.4 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH −40°C to +85°C 130 9/40 Guaranteed by design; not subject to production test. Rev. A | Page 6 of 19 μA typ μA max V min/V max GND = 0 V, VSS = 0 V Data Sheet ADG5419 CONTINUOUS CURRENT PER CHANNEL, Sx OR D Table 5. Parameter 8-LEAD MSOP VDD = 15 V, VSS = −15 V VDD = 20 V, VSS = −20 V VDD = 12 V, VSS = 0 V VDD = 36 V, VSS = 0 V 8-LEAD LFCSP VDD = 15 V, VSS = −15 V VDD = 20 V, VSS = −20 V VDD = 12 V, VSS = 0 V VDD = 36 V, VSS = 0 V 25°C 85°C 125°C Unit 113 118 90 116 73 76 60 74 46 47 41 46 mA maximum mA maximum mA maximum mA maximum 156 163 126 160 92 95 78 93 52 53 48 53 mA maximum mA maximum mA maximum mA maximum Test Conditions/Comments θJA = 133.1°C/W θJA = 60.88°C/W Rev. A | Page 7 of 19 ADG5419 Data Sheet ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 6. Parameter VDD to VSS VDD to GND VSS to GND Analog Inputs1 Digital Inputs1 Peak Current, Sx or D Pins Continuous Current, Sx or D2 Temperature Range Operating Storage Junction Temperature Thermal Impedance, θJA 8-Lead MSOP (4-Layer Board) 8-Lead LFCSP Reflow Soldering Peak Temperature, Pb Free Human Body Model (HBM) ESD Rating 48 V −0.3 V to +48 V +0.3 V to −48 V VSS − 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first VSS − 0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 410 mA (pulsed at 1 ms, 10% duty cycle maximum) Data + 15% Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION −40°C to +125°C −65°C to +150°C 150°C 133.1°C/W 60.88°C/W As per JEDEC J-STD-020 8 kV 1 Overvoltages at the IN, Sx, and D pins are clamped by internal diodes. Limit current to the maximum ratings given. 2 See Table 5. Rev. A | Page 8 of 19 Data Sheet ADG5419 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS GND 3 TOP VIEW (Not to Scale) VDD 4 D 1 7 VSS SA 2 6 IN GND 3 VDD 4 5 EN NOTES 1. EXPOSED PAD TIED TO SUBSTRATE, VSS. ADG5419 TOP VIEW (Not to Scale) 8 SB 7 VSS 6 IN 5 NC NOTES 1. NC = NO CONNECT. NOT INTERNALLY CONNECTED. Figure 3. 8-Lead LFCSP Pin Configuration 11370-002 8 SB ADG5419 11370-103 D 1 SA 2 Figure 4. 8-Lead MSOP Pin Configuration Table 7. Pin Function Descriptions LFCSP 1 2 3 4 5 6 7 8 Pin No. MSOP 1 2 3 4 6 7 8 5 Not applicable Mnemonic D SA GND VDD EN IN VSS SB NC EPAD Description Drain Terminal. This pin can be an input or output. Source Terminal. This pin can be an input or an output. Ground (0 V) Reference. Most Positive Power Supply Potential. Active High Digital Input. When this pin is low, the device is disabled and all switches are turned off. When this pin is high, the IN logic input determines the state of the switch. Logic Control Input. Most Negative Power Supply Potential. Source Terminal. This pin can be an input or an output. No Connect. Not internally connected. Exposed Pad. Exposed pad tied to substrate, VSS. Table 8. LFCSP Truth Table EN 0 1 1 1 IN X1 0 1 Switch A Off On Off Switch B Off Off On X = don’t care. Table 9. MSOP Truth Table IN 0 1 Switch A On Off Switch B Off On Rev. A | Page 9 of 19 ADG5419 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 25 16 TA = 25°C 20 12 VDD = +11V VSS = –11V 15 10 VDD = +13.5V VSS = –13.5V VDD = +15V VSS = –15V VDD = +16.5V VSS = –16.5V 5 TA = 25°C 14 ON RESISTANCE (Ω) ON RESISTANCE (Ω) VDD = +10V VSS = –10V VDD = +9V VSS = –9V 10 VDD = 32.4V VSS = 0V 8 VDD = 39.6V VSS = 0V VDD = 36V VSS = 0V 6 4 –16 –14 –12 –10 –8 –6 –4 –2 2 0 4 VS, VD (V) 6 8 10 12 14 16 18 0 11370-003 0 –18 5 10 15 20 25 30 35 40 45 VS, VD (V) Figure 8. On Resistance as a Function of VS, VD (Single Supply) Figure 5. On Resistance as a Function of VS, VD Dual Supply 16 0 11370-006 2 25 TA = 25°C 14 ON RESISTANCE (Ω) ON RESISTANCE (Ω) 20 VDD = +18V VSS = –18V 12 10 8 VDD = +22V VSS = –22V VDD = +20V VSS = –20V 6 TA = +125°C 15 TA = +85°C TA = +25°C 10 TA = –40°C 4 5 2 –15 –10 –5 0 5 10 15 20 25 VS, VD (V) Figure 6. On Resistance as a Function of VS, VD Dual Supply) VDD = 10.8V VSS = 0V VDD = 9V VSS = 0V 25 20 15 VDD = 13.2V VSS = 0V 10 VDD = 12V VSS = 0V 0 5 10 15 VDD = +20V VSS = –20V 20 VDD = 11V VSS = 0V TA = +125°C 15 TA = +85°C TA = +25°C 10 TA = –40°C 5 0 0 2 4 6 8 VS, VD (V) 10 12 14 Figure 7. On Resistance as a Function of VS, VD (Single Supply) 0 –20 –15 –10 –5 0 VS, VD (V) 5 10 15 20 11370-008 5 11370-005 ON RESISTANCE (Ω) 30 VDD = 10V VSS = 0V –5 Figure 9. On Resistance as a Function of VS (VD) for Different Temperatures, ±15 V Dual Supply 25 TA = 25°C –10 VS, VD (V) ON RESISTANCE (Ω) 35 0 –15 11370-007 –20 11370-004 0 –25 VDD = +15V VSS = –15V Figure 10. On Resistance as a Function of VS (VD) for Different Temperatures, ±20 V Dual Supply Rev. A | Page 10 of 19 Data Sheet ADG5419 0.4 VDD = +20V VSS = –20V VBIAS = +15V/–15V 35 LEAKAGE CURRENT (nA) 20 TA = +25°C 15 TA = –40°C 10 0 ID, IS (ON) – – –0.2 IS (OFF) – + –0.4 5 0 2 4 6 8 10 12 VS, VD (V) –0.6 11370-009 0 VDD = 12V VSS = 0V 0.4 VDD = 36V VSS = 0V LEAKAGE CURRENT (nA) ON RESISTANCE (Ω) TA = +125°C TA = +85°C TA = +25°C 10 TA = –40°C 5 5 10 15 20 25 30 35 40 ID, IS (ON) – – IS (OFF) + – 0 ID (OFF) – + IS (OFF) – + ID (OFF) + – 0 0.4 LEAKAGE CURRENT (nA) IS (OFF) + – ID (OFF) – + ID, IS (ON) – – 0 IS (OFF) – + –0.2 50 75 100 VDD = 36V VSS = 0V VBIAS = 1V/30V IS (OFF) + – 0 ID (OFF) – + ID, IS (ON) – – –0.2 IS (OFF) – + –0.4 ID (OFF) + – ID (OFF) + – 0 25 50 75 TEMPERATURE (°C) 100 125 –0.6 11370-011 –0.4 125 ID, IS (ON) + + 0.2 ID, IS (ON) + + 0.2 25 Figure 15. Leakage Currents as a Function of Temperature, 12 V Single Supply VDD = +15V VSS = –15V VBIAS = +10V/–10V 0.4 125 TEMPERATURE (°C) Figure 12. On Resistance as a Function of VS (VD) for Different Temperatures, 36 V Single Supply 0.6 100 0.1 –0.2 11370-010 0 75 ID, IS (ON) + + 0.2 –0.1 VS, VD (V) LEAKAGE CURRENT (nA) 50 VDD = 12V VSS = 0V VBIAS = 1V/10V 0.3 15 25 Figure 14. Leakage Currents as a Function of Temperature, ±20 V Dual Supply 20 0 0 TEMPERATURE (°C) Figure 11. On Resistance as a Function of VS (VD) for Different Temperatures, 12 V Single Supply 25 ID (OFF) + – 11370-013 TA = +85°C 25 IS (OFF) + – ID (OFF) – + 0 25 50 75 100 125 TEMPERATURE (°C) Figure 13. Leakage Currents as a Function of Temperature, ±15 V Dual Supply Rev. A | Page 11 of 19 Figure 16. Leakage Currents as a Function of Temperature, 36 V Single Supply 11370-014 ON RESISTANCE (Ω) 0.2 TA = +125°C 30 ID, IS (ON) + + 11370-012 40 ADG5419 0 –10 Data Sheet 0.05 TA = 25°C VDD = +15V VSS = –15V TA = 25°C RL = 1kΩ VDD = 12V, VSS = 0V, VS = 6V p-p VDD = 36V, VSS = 0V, VS = 18V p-p VDD = 15V, VSS = –15V, VS = 15V p-p VDD = 20V, VSS = –20V, VS = 20V p-p 0.04 –30 –40 THD + N (%) OFF ISOLATION (dB) –20 –50 –60 0.03 0.02 –70 –80 0.01 100k 1M 10M 100M 1G FREQUENCY (Hz) 0 11370-015 10k 0 5 0 0 TA = 25°C VDD = +15V VSS = –15V 20 TA = 25°C VDD = +15V VSS = –15V –0.5 –1.0 INSERTION LOSS (dB) CROSSTALK (dB) 15 Figure 20. THD + N vs. Frequency Figure 17. Off Isolation vs. Frequency –20 10 FREQUENCY (kHz) 11370-018 –90 –100 1k –40 –60 –80 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –100 100k 1M 10M FREQUENCY (Hz) 100M 1G –5.0 1k 11370-016 –120 10k 10k 100k 100M 1G Figure 21. Bandwidth 500 300 VDD VDD VDD VDD = 15V, VSS = –15V = 20V, VSS = –20V = 12V, VSS = 0V = 36V, VSS = 0V 450 400 350 TIME (ns) 200 150 100 300 250 200 VDD VDD VDD VDD 150 100 50 = 12V, VSS = 0V = 36V, VSS = 0V = 15V, VSS = –15V = 20V, VSS = –20V 0 –20 –10 0 10 20 30 VS (V) 40 0 –40 –20 0 20 40 60 TEMPERATURE (°C) 80 100 Figure 22. tTRANSITION Times vs. Temperature Figure 19. Charge Injection vs. Source Voltage Rev. A | Page 12 of 19 120 11370-020 50 11370-017 CHARGE INJECTION (pC) 10M FREQUENCY (Hz) Figure 18. Crosstalk vs. Frequency 250 1M 11370-019 –4.5 Data Sheet 0 –20 ADG5419 TA = 25°C VDD = +15V VSS = –15V NO DECOUPLING CAPACITORS ACPSRR (dB) –40 –60 –80 –120 1k 10k 100k 1M FREQUENCY (Hz) 10M 11370-123 DECOUPLING CAPACITORS –100 Figure 23. ACPSRR vs. Frequency Rev. A | Page 13 of 19 ADG5419 Data Sheet TEST CIRCUITS D A SB A V ID (ON) Sx D IS (OFF) IDS Figure 24. Channel On and Source Off Leakage (MSOP Only) 11370-022 RON = V/IDS VS 11370-021 VD VS Figure 27. On Resistance VDD VSS 0.1µF 0.1µF NETWORK ANALYZER VOUT A RL 50Ω D SB SA D ID (OFF) 11370-121 VD VS GND CHANNEL-TO-CHANNEL CROSSTALK = 20 log VDD VSS 0.1µF 0.1µF VDD IN NC SB D VOUT VS Figure 28. Channel-to-Channel Crosstalk Figure 25. Off Leakage (LFCSP Only) SA R 50Ω IN VS A SB A VSS NETWORK ANALYZER VSS NC SB SA 50Ω 50Ω VS ID (ON) D A VIN RL 50Ω VD 11370-122 GND VS 11370-023 IS (OFF) VDD SA OFF ISOLATION = 20 log VOUT VS Figure 29. Off Isolation Figure 26. On Leakage (LFCSP Only) Rev. A | Page 14 of 19 VOUT 11370-024 SA NC Data Sheet ADG5419 VDD VSS 0.1µF 0.1µF VDD AUDIO PRECISION VDD VSS RS Sx VS V p-p IN D VIN SB RL 50Ω GND INSERTION LOSS = 20 log VOUT WITH SWITCH VOUT WITHOUT SWITCH 0.1µF VIN (SB = VS) 50% 50% VIN (SA = VS) 50% 50% VSS SA* D SB* VOUT RL 300Ω IN CL 35pF VS 0.9VS VOUT 0.1VS 0V GND VIN VOUT Figure 31. Bandwidth VSS VDD VS 50Ω VIN 11370-025 VDD 50Ω VS Figure 30. THD + Noise 0.1µF NC D VOUT RL 1kΩ GND SA IN NETWORK ANALYZER VSS tTRANSITION tTRANSITION *ALTERNATIVELY, SB CAN BE CONNECTED TO VS WITH SA CONNECTED TO GROUND. 11370-127 0.1µF Figure 32. Transition Time, tTRANSITION 3V ENABLE DRIVE (VEN) 50% VDD VSS VDD VSS IN 50% SA VS SB 0V ADG5419 OUTPUT (VOUT) 0V tON (EN) tOFF (EN) 0.9VS D EN VEN 50Ω 0.1VS Figure 33. Enable Delay, tON (EN), tOFF (EN) (LFCSP Only) Rev. A | Page 15 of 19 GND VOUT 300Ω 35pF 11370-132 VS 11370-026 VDD VSS 0.1µF ADG5419 Data Sheet 0.1µF VS VDD VSS VDD VSS SB 0.1µF VIN D VOUT SA RL 300Ω IN VOUT CL 35pF 80% tD tD GND 11370-028 VIN Figure 34. Break-Before-Make Delay, tD VDD VSS SB D NC SA CL 1nF IN VIN VIN (NORMALLY CLOSED SWITCH) VSS VDD VS 0.1µF GND VOUT ON OFF VIN (NORMALLY OPEN SWITCH) VOUT ∆VOUT Figure 35. Charge Injection Rev. A | Page 16 of 19 QINJ = CL × ∆VOUT 11370-029 0.1µF Data Sheet ADG5419 TERMINOLOGY CD (On), CS (On) CD (On) and CS (On) represent on switch capacitances, which are measured with reference to ground. IDD IDD represents the positive supply current. ISS ISS represents the negative supply current. CIN CIN represents digital input capacitance. VD, VS VD and VS represent the analog voltage on Terminal D and Terminal S, respectively. tON (EN) tON represents the delay time between the 50% and 90% points of the digital input and switch on condition. See Figure 33. RON RON is the ohmic resistance between Terminal D and Terminal S. tOFF (EN) tOFF represents the delay time between the 50% and 90% points of the digital input and switch off condition. See Figure 33. ΔRON ΔRON represents the difference between the RON of any two channels. RFLAT (ON) The difference between the maximum and minimum value of on resistance as measured over the specified analog signal range is represented by RFLAT (ON). IS (Off) IS (Off) is the source leakage current with the switch off. tTRANSITION tTRANSITION represents the delay time between the 50% and 90% points of the digital inputs and the switch on condition when switching from one address state to another. tD tD represents the off time measured between the 80% point of both switches when switching from one address state to another. Off Isolation Off isolation is a measure of unwanted signal coupling through an off channel. ID (Off) ID (Off) is the drain leakage current with the switch off. ID (On), IS (On) ID (On) and IS (On) represent the channel leakage currents with the switch on. VINL VINL is the maximum input voltage for Logic 0. VINH VINH is the minimum input voltage for Logic 1. Charge Injection Charge injection is a measure of the glitch impulse transferred from the digital input to the analog output during switching. Crosstalk Crosstalk is a measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Bandwidth Bandwidth is the frequency at which the output is attenuated by 3 dB, from its dc level. IINL, IINH IINL and IINH represent the low and high input currents of the digital inputs. CD (Off) CD (Off) represents the off switch drain capacitance, which is measured with reference to ground. CS (Off) CS (Off) represents the off switch source capacitance, which is measured with reference to ground. Total Harmonic Distortion + Noise (THD + N) THD + N is the ratio of the harmonic amplitude plus noise of the signal to the fundamental. AC Power Supply Rejection Ratio (ACPSRR) ACPSRR measures the ability of a device to avoid coupling noise and spurious signals that appear on the supply voltage pin to the output of the switch. The dc voltage on the device is modulated by a sine wave of 0.62 V p-p. The ratio of the amplitude of signal on the output to the amplitude of the modulation is the ACPSRR. See Figure 23. Rev. A | Page 17 of 19 ADG5419 Data Sheet APPLICATIONS INFORMATION The ADG54xx family of switches and multiplexers provide a robust solution for instrumentation, industrial, aerospace, and other harsh environments that are prone to latch-up, which is an undesirable high current state that can lead to device failure and persists until the power supply is turned off. The ADG5419 high voltage switch allows single-supply operation from 9 V to 40 V and dual-supply operation from ±9 V to ±22 V. The ADG5419 (as well as other select devices within this family) achieves an 8 kV human body model ESD rating, which provides a robust solution, eliminating the need for separate protection circuitry designs in some applications. TRENCH ISOLATION NMOS PMOS P-WELL N-WELL TRENCH In junction isolation, the N and P wells of the PMOS and NMOS transistors form a diode that is reverse-biased under normal operation. However, during overvoltage conditions, this diode can become forward-biased. The two transistors form a silicon-controlled rectifier (SCR) type circuit, causing a significant amplification of the current that, in turn, leads to latch-up. With trench isolation, this diode is removed, and the result is a latch-up immune switch. Rev. A | Page 18 of 19 HANDLE WAFER Figure 36. Trench Isolation 11370-030 BURIED OXIDE LAYER In the ADG5419, an insulating oxide layer (trench) is placed between the NMOS and the PMOS transistors of each CMOS switch. Parasitic junctions, which occur between the transistors in junction-isolated switches, are eliminated, and the result is a completely latch-up immune switch. Data Sheet ADG5419 OUTLINE DIMENSIONS 1.75 1.65 1.50 2.00 BSC 5 3.00 BSC 8 1.90 1.80 1.65 EXPOSED PAD 0.20 MIN 4 INDEX AREA 0.50 0.40 0.30 TOP VIEW 0.80 0.75 0.70 FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. COPLANARITY 0.08 0.05 MAX 0.02 NOM 0.30 0.25 0.20 0.50 081806-A SEATING PLANE BOTTOM VIEW 0.15 REF SIDE VIEW PIN 1 INDICATOR 1 Figure 37. 8-Lead Lead Frame Chip Scale Package [LFCSP_WD] 2 mm × 3 mm Body, Very Very Thin, Dual Lead (CP-8-4) Dimensions shown in millimeters 3.20 3.00 2.80 8 3.20 3.00 2.80 1 5.15 4.90 4.65 5 4 PIN 1 IDENTIFIER 0.65 BSC 0.95 0.85 0.75 15° MAX 1.10 MAX 0.40 0.25 6° 0° 0.23 0.09 COMPLIANT TO JEDEC STANDARDS MO-187-AA 0.80 0.55 0.40 10-07-2009-B 0.15 0.05 COPLANARITY 0.10 Figure 38. 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters ORDERING GUIDE Model1 ADG5419BCPZ-RL7 ADG5419BRMZ ADG5419BRMZ-RL7 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 8-Lead Lead Frame Chip Scale Package [LFCSP_WD] 8-Lead Mini Small Outline Package [MSOP] 8-Lead Mini Small Outline Package [MSOP] Z = RoHS Compliant Part. ©2013–2015 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11370-0-3/15(A) Rev. A | Page 19 of 19 Package Option CP-8-4 RM-8 RM-8 Branding BL S48 S48