MC14012B B−Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. http://onsemi.com Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All Outputs Buffered • Capable of Driving Two Low−Power TTL Loads or One Low−Power • • • MARKING DIAGRAMS Schottky TTL Load Over the Rated Temperature Range Double Diode Protection on All Inputs Pin−for−Pin Replacements for Corresponding CD4000 Series B Suffix Devices Pb−Free Packages are Available 14 PDIP−14 P SUFFIX CASE 646 MC14012BCP AWLYYWWG 1 14 SOIC−14 D SUFFIX CASE 751A MAXIMUM RATINGS (Voltages Referenced to VSS) Symbol VDD Vin, Vout Iin, Iout Parameter DC Supply Voltage Range Input or Output Voltage Range (DC or Transient) Value Unit −0.5 to +18.0 V −0.5 to VDD + 0.5 V Input or Output Current (DC or Transient) per Pin ± 10 mA PD Power Dissipation, per Package (Note 1) 500 mW TA Ambient Temperature Range −55 to +125 °C Tstg Storage Temperature Range −65 to +150 °C TL Lead Temperature (8−Second Soldering) 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS v (Vin or Vout) v VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 7 1 14012BG AWLYWW 1 14 SOEIAJ−14 F SUFFIX CASE 965 MC14012B ALYWG 1 A WL, L YY, Y WW, W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MC14012B/D MC14012B MC14012B Dual 4−Input NAND Gate OUTA 1 14 VDD IN 1A 2 13 OUTB IN 2A 3 12 IN 4B IN 3A 4 11 IN 3B IN 4A 5 10 IN 2B NC 6 9 IN 1B VSS 7 8 NC 2 3 4 5 9 10 11 12 1 13 NC = 6, 8 VDD = PIN 14 VSS = PIN 7 NC = NO CONNECTION Figure 1. Pin Assignment Figure 2. Logic Diagram ORDERING INFORMATION Device Package MC14012BCP PDIP−14 MC14012BCPG PDIP−14 (Pb−Free) MC14012BD SOIC−14 MC14012BDG SOIC−14 (Pb−Free) MC14012BDR2 SOIC−14 MC14012BDR2G SOIC−14 (Pb−Free) MC14012BFEL SOEIAJ−14 MC14012BFELG SOEIAJ−14 (Pb−Free) Shipping † 25 Units / Rail 55 Units / Rail 2500 Units / Tape & Reel 2000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MC14012B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Characteristic Output Voltage Vin = VDD or 0 Symbol − 55_C 25_C 125_C VDD Vdc Min Max Min Typ (Note 2) Max Min Max Unit “0” Level VOL 5.0 10 15 − − − 0.05 0.05 0.05 − − − 0 0 0 0.05 0.05 0.05 − − − 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.95 9.95 14.95 − − − 4.95 9.95 14.95 5.0 10 15 − − − 4.95 9.95 14.95 − − − Vdc Input Voltage “0” Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) VIL 5.0 10 15 − − − 1.5 3.0 4.0 − − − 2.25 4.50 6.75 1.5 3.0 4.0 − − − 1.5 3.0 4.0 “1” Level VIH 5.0 10 15 3.5 7.0 11 − − − 3.5 7.0 11 2.75 5.50 8.25 − − − 3.5 7.0 11 − − − 5.0 5.0 10 15 – 3.0 – 0.64 – 1.6 – 4.2 − − − − – 2.4 – 0.51 – 1.3 – 3.4 – 4.2 – 0.88 – 2.25 – 8.8 − − − − – 1.7 – 0.36 – 0.9 – 2.4 − − − − IOL 5.0 10 15 0.64 1.6 4.2 − − − 0.51 1.3 3.4 0.88 2.25 8.8 − − − 0.36 0.9 2.4 − − − mAdc Input Current Iin 15 − ± 0.1 − ± 0.00001 ± 0.1 − ± 1.0 mAdc Input Capacitance (Vin = 0) Cin − − − − 5.0 7.5 − − pF Quiescent Current (Per Package) IDD 5.0 10 15 − − − 0.25 0.5 1.0 − − − 0.0005 0.0010 0.0015 0.25 0.5 1.0 − − − 7.5 15 30 mAdc IT 5.0 10 15 Vin = 0 or VDD (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive Current (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) Source Sink Total Supply Current (Notes 3, 4) (Dynamic plus Quiescent, Per Gate, CL = 50 pF) IOH Vdc Vdc mAdc IT = (0.3 mA/kHz) f + IDD/N IT = (0.6 mA/kHz) f + IDD/N IT = (0.9 mA/kHz) f + IDD/N mAdc 2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 3. The formulas given are for the typical characteristics only at 25_C. 4. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + (CL − 50) Vfk where: IT is in mA (per package), CL in pF, V = (VDD − VSS) in volts, f in kHz is input frequency, and k = 0.001 x the number of exercised gates per package. http://onsemi.com 3 MC14012B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (Note 5) (CL = 50 pF, TA = 25_C) Characteristic Symbol Output Rise Time tTLH = (1.35 ns/pF) CL + 33 ns tTLH = (0.60 ns/pF) CL + 20 ns tTLH = (0.40 ns/PF) CL + 20 ns tTLH Output Fall Time tTHL = (1.35 ns/pF) CL + 33 ns tTHL = (0.60 ns/pF) CL + 20 ns tTHL = (0.40 ns/pF) CL + 20 ns tTHL Propagation Delay Time tPLH, tPHL = (0.90 ns/pF) CL + 115 ns tPLH, tPHL = (0.36 ns/pF) CL + 47 ns tPLH, tPHL = (0.26 ns/pF) CL + 37 ns VDD Vdc Min Typ (Note 6) Max 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 100 50 40 200 100 80 5.0 10 15 − − − 160 65 50 300 130 100 Unit ns ns tPLH, tPHL ns 5. The formulas given are for the typical characteristics only at 25_C. 6. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance. 14 PULSE GENERATOR 20 ns VDD 20 ns 90% 50% 10% INPUT INPUT OUTPUT tPHL CL * 7 OUTPUT INVERTING *All unused inputs of AND, NAND gates must be connected to VDD. All unused inputs of OR, NOR gates must be connected to VSS. tTHL tPLH Figure 3. Switching Time Test Circuit and Waveforms VDD VDD 2, 9 * 3, 10 VSS 4, 11 5, 12 1, 13 SAME AS ABOVE 7 *Inverter omitted VSS Figure 4. Circuit Schematic − One of Two Gates Shown http://onsemi.com 4 VOH tTLH tPHL tTLH 14 0V tPLH 90% 50% 10% OUTPUT NON−INVERTING VSS VDD 90% 50% 10% tTHL VOL VOH VOL MC14012B TYPICAL B−SERIES GATE CHARACTERISTICS N−CHANNEL DRAIN CURRENT (SINK) P−CHANNEL DRAIN CURRENT (SOURCE) −10 5.0 ID , DRAIN CURRENT (mA) ID , DRAIN CURRENT (mA) −9.0 4.0 TA = −55°C 3.0 −40°C +85°C +25°C 2.0 +125°C 1.0 −8.0 TA = −55°C −7.0 −40°C −6.0 −5.0 +25°C +85°C −4.0 −3.0 +125°C −2.0 −1.0 0 0 1.0 2.0 3.0 4.0 0 5.0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) −5.0 −45 TA = −55°C 16 14 −40°C 12 +25°C +85°C 10 ID , DRAIN CURRENT (mA) ID , DRAIN CURRENT (mA) −4.0 −50 18 +125°C 8.0 6.0 −40 −35 TA = −55°C −30 −25 + 25°C −20 +125°C 4.0 −10 2.0 −5.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0 0 10 −1.0 −2.0 −3.0 −4.0 −5.0 −6.0 −7.0 −8.0 −9.0 −10 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) Figure 7. VGS = 10 Vdc Figure 8. VGS = − 10 Vdc 50 − 100 45 − 90 ID , DRAIN CURRENT (mA) 40 TA = −55°C 35 30 −40°C 25 +25°C 20 +85°C +125°C 15 −40°C +85°C −15 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) ID , DRAIN CURRENT (mA) −3.0 Figure 6. VGS = − 5.0 Vdc 20 10 5.0 0 −2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) Figure 5. VGS = 5.0 Vdc 0 −1.0 − 80 − 70 − 60 TA = −55°C − 50 +25°C − 40 −40°C +85°C − 30 +125°C − 20 − 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 0 20 0 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) Figure 9. VGS = 15 Vdc −2.0 −4.0 −6.0 −8.0 −10 −12 −14 −16 −18 −20 VDS, DRAIN−TO−SOURCE VOLTAGE (Vdc) Figure 10. VGS = − 15 Vdc These typical curves are not guarantees, but are design aids. Caution: The maximum rating for output current is 10 mA per pin. http://onsemi.com 5 MC14012B V out , OUTPUT VOLTAGE (Vdc) V out , OUTPUT VOLTAGE (Vdc) VOLTAGE TRANSFER CHARACTERISTICS SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR 5.0 4.0 SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, AND 3.0 2.0 1.0 0 0 1.0 8.0 SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, AND 6.0 4.0 2.0 0 2.0 3.0 4.0 5.0 Vin, INPUT VOLTAGE (Vdc) SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR 10 2.0 0 4.0 6.0 8.0 10 Vin, INPUT VOLTAGE (Vdc) Figure 11. VDD = 5.0 Vdc DC NOISE MARGIN SINGLE INPUT NAND, AND MULTIPLE INPUT NOR, OR 16 V out , OUTPUT VOLTAGE (Vdc) Figure 12. VDD = 10 Vdc The DC noise margin is defined as the input voltage range from an ideal “1” or “0” input level which does not produce output state change(s). The typical and guaranteed limit values of the input values VIL and VIH for the output(s) to be at a fixed voltage VO are given in the Electrical Characteristics table. VIL and VIH are presented graphically in Figure 11. Guaranteed minimum noise margins for both the “1” and “0” levels = 1.0 V with a 5.0 V supply 2.0 V with a 10.0 V supply 2.5 V with a 15.0 V supply 14 12 SINGLE INPUT NOR, OR MULTIPLE INPUT NAND, A 10 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 Vin, INPUT VOLTAGE (Vdc) Figure 13. VDD = 15 Vdc VDD Vout Vout VO VO VO VO VDD VDD VDD 0 Vin 0 VIL VIH Vin VIL VIH VSS = 0 VOLTS DC (a) Inverting Function (b) Non−Inverting Function Figure 14. DC Noise Immunity http://onsemi.com 6 MC14012B PACKAGE DIMENSIONS PDIP−14 CASE 646−06 ISSUE P 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B A F L N C −T− SEATING PLANE H G D 14 PL J K 0.13 (0.005) M M http://onsemi.com 7 DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 MC14012B PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− 14 8 −B− P 7 PL 0.25 (0.010) M 7 1 G −T− D 14 PL 0.25 (0.010) T B S A DIM A B C D F G J K M P R J M K M F R X 45 _ C SEATING PLANE B M S SOLDERING FOOTPRINT* 7X 7.04 14X 1.52 1 14X 0.58 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 MC14012B PACKAGE DIMENSIONS SOEIAJ−14 CASE 965−01 ISSUE A 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). LE 8 Q1 E HE M_ L 7 1 DETAIL P Z D VIEW P A e A1 b 0.13 (0.005) c M 0.10 (0.004) DIM A A1 b c D E e HE 0.50 LE M Q1 Z MILLIMETERS MIN MAX −−− 2.05 0.05 0.20 0.35 0.50 0.10 0.20 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 −−− 1.42 INCHES MIN MAX −−− 0.081 0.002 0.008 0.014 0.020 0.004 0.008 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 −−− 0.056 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MC14012B/D