Spec. No. : C617D3 Issued Date : 2008.06.04 Revised Date : Page No. : 1/5 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor MJE13003D3 Features • High breakdown voltage, VCEO=400V (min.) • High collector current, IC(max)=1.5A (DC) • Pb-free package Symbol Outline MJE13003D3 TO-126ML B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) Base Current Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits 700 400 9 1.5 3 (Note ) 0.2 Unit V V V A A A 1.5 W 20 W 150 -55~+150 °C °C Note : Single pulse, Pw≤300μs, Duty Cycle≤2%. MJE13003D3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C617D3 Issued Date : 2008.06.04 Revised Date : Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(SAT) *VCE(SAT) *VBE(SAT) *hFE 1 *hFE 2 fT tstg tf Min. 700 400 9 10 5 5 1.8 Typ. - Max. 10 500 10 300 600 1.2 30 0.5 6.6 Unit V V V μA μA μA mV mV V MHz μs Test Conditions IC=100μA IC=10mA IE=2mA VCB=700V, IE=0 VCE=400V, IE=0 VEB=9V, IC=0 IC=500mA, IB=100mA IC=1A, IB=250mA IC=1A, IB=250mA VCE=5V, IC=500mA VCE=5V, IC=1.5A VCE=10V, IC=100mA, f=100MHz VCC=100V, IC=1A, IB1=-IB2=0.2A, IC=0.25A *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank A B C D Range 10~15 15~20 20~25 25~30 Ordering Information Device MJE13003D3 MJE13003D3 Package TO-126ML (Pb-free) Shipping Marking 200 pcs / Bag, 15 Bags/Box, 10 Boxes/Carton 13003 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C617D3 Issued Date : 2008.06.04 Revised Date : Page No. : 3/5 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 100 1000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE VCE=5V 10 VCE=1V VCE=2V 1 10 100 1000 IC=4IB 100 IC=3IB 10 10000 1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) 10000 On Vottage vs Collector Current Saturation Voltage vs Collector Current 1000 10000 IC=3IB On Voltage---(mV) Saturation Voltage---(mV) VBE(SAT) 1000 VBE(ON)@VCE=2V IC=4IB 100 100 10 100 1000 Collector Current---IC(mA) 1 10000 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve Power Derating Curve 25 1.6 Power Dissipation---PD(W) Power Dissipation---PD(W) 1.4 1.2 1 0.8 0.6 0.4 20 15 10 5 0.2 0 0 0 MJE13003D3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C617D3 Issued Date : 2008.06.04 Revised Date : Page No. : 4/5 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MJE13003D3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C617D3 Issued Date : 2008.06.04 Revised Date : Page No. : 5/5 TO-126ML Dimension Marking: Device Name 13003 □□□ Date Code Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical Inches Min. Max. 0.118 0.134 0.071 0.087 0.026 0.034 0.046 0.054 0.018 0.024 0.307 0.323 0.425 0.441 DIM A A1 b b1 c D E Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 DIM e e1 L L1 P Φ1 Φ2 Inches Min. Max. *0.090 0.176 0.594 0.051 0.159 0.118 0.122 0.183 0.610 0.059 0.167 0.126 0.130 Millimeters Min. Max. *2.28 4.460 4.660 15.100 15.500 1.300 1.500 4.040 4.240 3.000 3.200 3.100 3.300 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MJE13003D3 CYStek Product Specification