PD - 95355A
IRFR15N20DPbF
IRFU15N20DPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l Lead-Free
l
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
200V
RDS(on) max
ID
0.165Ω
17A
l
D-Pak
IRFR15N20D
I-Pak
IRFU15N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
17
12
68
140
3.0
0.96
± 30
8.3
-55 to + 175
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes through
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Typ.
Max.
Units
–––
–––
–––
1.04
50
110
°C/W
are on page 10
1
1/17/05
IRFR/U15N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.165
Ω
VGS = 10V, ID = 10A
5.5
V
VDS = VGS, ID = 250µA
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
27
6.9
14
9.7
32
17
8.9
910
170
31
1380
67
150
Max. Units
Conditions
–––
S
VDS = 50V, ID = 10A
41
ID = 10A
10
nC
VDS = 160V
21
VGS = 10V,
–––
VDD = 100V
–––
ID = 10A
ns
–––
RG = 6.8Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
260
10
14
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
––– –––
showing the
A
G
integral reverse
––– –––
68
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 10A, VGS = 0V
––– 130 200
ns
TJ = 25°C, IF = 10A
––– 610 920
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFR/U15N20DPbF
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
0.1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
5.0V
1
100
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 175 ° C
10
1
TJ = 25 ° C
0.1
V DS = 50V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
5
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.01
20µs PULSE WIDTH
TJ = 175 ° C
0.1
0.1
12
ID = 17A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U15N20DPbF
C, Capacitance(pF)
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
VGS , Gate-to-Source Voltage (V)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
10000
ID = 10A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
10
1
10
100
1000
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TJ = 175 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
100
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.4
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U15N20DPbF
20
V DS
VGS
ID , Drain Current (A)
D.U.T.
RG
15
RD
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D.U.T
RG
IAS
20V
VGS
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
IRFR/U15N20DPbF
600
TOP
500
BOTTOM
ID
4.2A
7.2A
10A
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U15N20DPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
+
-
-
+
RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFR/U15N20DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECT IFIER
LOGO
Note: "P" in ass embly line position
indicates "Lead-Free"
IRFU120
12
916A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INT ERNAT IONAL
RECTIFIER
LOGO
IRFU120
12
ASS EMBLY
LOT CODE
8
34
DATE CODE
P = DESIGNATES LEAD-F REE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = ASSEMBLY SITE CODE
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IRFR/U15N20DPbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H ASS EMBLY
LOT CODE 5678
ASS EMBLED ON WW 19, 1999
IN T HE AS SEMBLY LINE "A"
INT ERNAT IONAL
RECT IF IER
LOGO
PART NUMB ER
IRF U120
919A
56
78
AS SEMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-F ree"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
AS S EMB LY
LOT CODE
www.irf.com
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS S EMB LY SIT E CODE
9
IRFR/U15N20DPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
Notes:
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 4.9mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
R G = 25Ω, IAS = 10A.
ISD ≤ 10A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/05
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/